384results about How to "Increased process reliability" patented technology

An improved heater for processing materials or growing crystals in supercritical fluids is provided. In a specific embodiment, the heater is scalable up to very large volumes and is cost effective. In conjunction with suitable high pressure apparatus, the heater is capable of processing materials at pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

The invention relates to a sandwich structure wave-absorbing composite material and a preparation method thereof, an integrated sandwich structure comprises an intermediate layer, an upper skin and alower skin, the intermediate layer is a honeycomb material filled with carbon nanotube/cellulose wave-absorbing foam, the upper skin is a quartz fiber cloth reinforced resin material having electromagnetic wave transmission characteristics, and the lower skin is a carbon fiber cloth-reinforced resin material having electromagnetic wave reflection characteristics. Specifically, the preparation method is carried out according to the following steps: 1. the intermediate layer, namely the honeycomb material filled with the carbon nanotube/cellulose wave-absorbing foam is prepared by a freeze-drying method; 2. the upper kin and the lower skin are prepared by impregnating resin with quartz fiber cloth/carbon fiber cloth; and 3. the intermediate wave-absorbing layer is compounded with the upper kin and the lower skin. The sandwich structure wave-absorbing composite material prepared by the method can replace existing wave-absorbing materials, and is widely used in aircrafts, ground weapon equipment, surface ships and other parts that have stealth requirements for electromagnetic waves.

The invention relates to a method for efficiently preparing cotton based mesoporous activated carbon fiber. The method comprises a step (1) of washing cotton, placing the cotton in a hydrothermal reaction kettle, performing heating to 150-200 DEG C at the heating rate of 5-30 DEG C/min, performing hydrothermal carbonization, performing heat preservation for 1-3 hours and then performing cooling to room temperature; a step (2) of dipping carbonization materials obtained from the step (1) into activator solution, performing microwave-ultrasonic joint dipping for 5-30 minutes and then performing filtration, sending filtration materials to a microwave heating device, performing activation for 5-15 minutes at 250-350 DEG C and then stopping microwave output, and a step (3) of washing the activated materials to be neutral and performing drying to obtain the activated carbon fiber. According to the method, the characteristics of microwave inner heating and selective heating are fully utilized, the technological process is simple, the activation temperature is only 250-350 DEG C, the activation time is only 5-15 minutes, the mesoporous proportion of the activated carbon fiber of the product reaches 50-90%, and the adsorptive property is good.

The invention belongs to the technical field of printed circuit board and in particular to a step printed circuit board and a manufacture method of the step printed circuit board. Deep milling processing technology is controlled, step grooves are roughly manufactured at preset step groove positions on a multilayer printed circuit board manufactured by an outer layer circuit, and then the roughly manufactured step grooves are further exacted to a preset depth through etching technology. The step printed circuit board and the manufacture method of the step printed circuit board have the advantages of being simple in process, easy to control, high in processing reliability and wide in application range, step groove lateral walls manufactured by the method are flat and little in defects, and accordingly high yield can be ensured. Simultaneously, the method does not need to consume auxiliary materials, and manufactured cost is saved.

The invention relates to a piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and a preparation method thereof; the piezoresistive pressure sensor of the MEMS comprises a strain film and a voltage dependent resistor; an island structure is distributed on the frontal surface edge of the strain film; and the voltage dependent resistor is positioned on the island structure. When the piezoresistive pressure sensor of the MEMS is prepared, the production of the island structure on the frontal surface of the film is carried out before the anisotropic etching of a back cavity, so that the cracking of the strain film is avoided when the island structure is produced on the frontal surface. The pressure sensor of the invention has high sensitivity and high linearity; and the preparation method thereof is compatible with the traditional technique, and has high rate of finished products.

The invention relates to the field of MOS (Metal Oxide Semiconductor) devices, particularly to a double-structure contact hole synchronous-etching technology. The silicon nitride barrier layer in a photosensitive area is removed immediately after a silicon nitride barrier layer is deposited, so that the deposit layer structure of a double-structure contact hole of a CIS (Complementary Metal Oxide Semiconductor Image Sensor) product is changed; the etching selection ratio of an interlayer dielectric layer (insulating dielectric layer) to the barrier layer and a silicone substrate is enlarged in the follow-up etching technology, so that the etching step special for a monox barrier layer at the bottom of the photosensitive area is reduced, the monox loss on STI (Shallow Trench Isolation) of a borderless contact hole in a logic area is reduced while the double-structure contact hole is formed, and the yield of products is improved while the technological reliability and stability are enhanced.

The RF switch based on micro electromechanical technology includes micro mechanism (MEMS) part and RF part, and has mobile switch structure for the switching function is set on the MEMS substrate. The MEMS part and RF part are first manufactured separately, and the MEMS substrate and RF substrate are then aligned and bonded together. The switch includes several mobile electrodes and has two kinds of drive states including upward drawing state and downward drawing state. The switch in the technological scheme of the present invention has fast switching speed, low drive voltage, high stability and relatively simple manufacture process with high outer contamination resistance.

The invention relates to a semi-automatic punching machine for a packaging tube, comprising a base, wherein steps are formed on the upper surface of the base, a workbench is arranged at the middle of the first step surface, a main guide rail is arranged on the lower part of the workbench, and punching mechanisms are symmetrically installed on the main guide rail and at the both ends of the workbench respectively; a bottom plate is installed on the second step surface of the base, a groove opening is formed at the middle of the bottom plate, an arranging frame is arranged at the groove opening, packaging tube limit mechanisms are arranged at the outer ends of the bottom of the arranging frame respectively, and a feeding mechanism is arranged on the lower part of the bottom plate; and a pressing mechanism is further arranged above the workbench. The semi-automatic punching machine reduces labour intensity, is high in production efficiency and reliable in working, and guarantees the product quality.

The invention relates to a method for producing an anti-corrosion pattern in production of a printed circuit board, and the method comprises the steps of: drilling a hole, metalizing the hole, performing electrophoretic coating of a resist, producing the anti-corrosion pattern by laser, performing chemical etching and the like. The method with the electrophoretic coating of a resist and the production of the anti-corrosion pattern by the laser is adopted for replacing an existing tenting method process with the steps of hot-press lamination of an anti-corrosion photoinduced masking dry film, exposure, developing and the like or replacing the steps of pattern electroplating of an anti-corrosion metal layer and the like. According to the method disclosed by the invention, a process route for producing the anti-corrosion pattern is shortened, the operation steps are simplified, the operability is improved, the anti-corrosion coating is applied by electrophoresis, materials are easy to obtain, the operation is simple and easy, and the formed anti-corrosion coating is thin in thickness, uniform and reliable; and the anti-corrosion pattern formed by direct photoetching through the laser method is high in precision, good in an environment and great in production flexibility. The method disclosed by the invention is suitable for sample, small-batch, multi-variety and higher-precision production of the circuit boards, and is also suitable for production of ordinary circuit boards.

The invention provides a low-temperature polycrystalline silicon thin film transistor array substrate, a manufacturing method of the low-temperature polycrystalline silicon thin film transistor array substrate and a display device, and belongs to the field of the thin film transistor manufacturing technology. The low-temperature polycrystalline silicon thin film transistor array substrate comprises contact holes, wherein a source electrode and a drain electrode of the low-temperature polycrystalline silicon thin film transistor array substrate are connected with an active layer through the contact holes, and conductive patterns which are connected with the active layer are arranged at the bottoms of the contact holes. According to the technical scheme, good Ohmic contact can be formed between the source electrode of the low-temperature polycrystalline silicon thin film transistor array substrate and the active layer, and between the drain electrode of the low-temperature polycrystalline silicon thin film transistor array substrate and the active layer after etching of the contact holes is accomplished, and display quality of the display device is ensured.

The invention relates to a vibrating bar-inserting long spiral air-cooled drilling rock-socketed pile forming method implemented in sub-hard rocks, soft rocks and weathered rocks, gravel soil layers or hard soil layers. The method comprises the following construction steps of: a, starting an air compressor, and discharging the compressed air from the air outlet of a long spiral rock-socketed drill bit by a blast pipe, a fluid director and an air pipe attached to a spiral drill rod; b, injecting the compressed air to cool the drill bit at the same time of long spiral drilling; c, reaching the designed hole depth; d, pouring concrete into the pile hole by using a concrete conveying pump; and e, vibrating and inserting a steel bar cage to the designed depth in a main rib pulled mode by adopting a vibrating hammer. Because the air can be continuously supplied to the drill bit, the drill bit is effectively cooled and the service life of the drill bit is greatly prolonged, and meanwhile, the drillability of the gas phase in the three-phase ratio of the soil is improved; therefore, the green construction technical process for a vibrating bar-inserting drilling pressure pouring pile can be adopted in the sub-hard rocks, the soft rocks and the weathered rocks, the gravel soil layers or the hard soil layers; and the method increases the quality reliability, reduces the consumption of various materials and improves the construction efficiency, so the method has remarkable economic benefit and social benefit.

The invention belongs to the semiconductor material and device field and discloses a GaN-based field effect transistor with a high quality MIS structure and a preparation method of the GaN-based field effect transistor, in particular, a GaN MISFET device gate dielectric layer and an improvement method of a dielectric layer and GaN interface. The device includes a substrate, an epitaxial layer grown on the substrate as well as a gate electrode, a source electrode, a drain electrode and an insulating layer; the epitaxial layer includes a stress buffer layer which is formed through primary epitaxial growth, a GaN epitaxial layer as well as a second epitaxial layer and a third epitaxial layer which are grown on selective regions on the GaN epitaxial layer; a GaN/AlGaN heterostructure is formed through secondary epitaxial growth, and groove channels are formed; an AlN thin layer is formed through third epitaxial growth; the AlN thin layer is partially oxidized so as to form an AlN/oxide dielectric layer stack structure; gate metal covers the groove channels; a source electrode region and a drain electrode region are formed at two ends; and the source electrode region and the drain electrode region are covered with metal, so that the source electrode and the drain electrode can be formed. The device and preparation process of the invention are simple and reliable. With the preparation method adopted, the high quality MIS structure can be formed, and the performance of the GaN MISFET device can be improved. The preparation method can play a key role in decreasing the electric leakage of the gate electrode, decreasing the resistance of the channels and stabilizing threshold voltage.

The invention provides a double-chamber heat pipe capable of self-optimizing heat dissipation. The heat pipe comprises a primary chamber, a secondary chamber and a two-way steam switch group, wherein the primary chamber is connected with the secondary chamber through the two-way steam switch group. The filling ratios and the steam pressure of the two chambers are adjusted through opening and closing of the two-way steam switch group between the two chambers. Steam switches have different switching thresholds through adjusting heat power of an electric heating device on the outer wall of the secondary chamber. Compared with a common heat pipe, the double-chamber heat pipe capable of self-optimizing heat dissipation has the advantages that the filling ratio of the heat pipe can be adjusted through the two-way steam switch group between the double chambers to be matched with the heat source power and the heat flux density, thereby achieving the optimal heat dissipation efficiency. The influence of a steam limit in the heat pipe on liquid backflow in a capillary filter element can be effectively inhibited. The heat pipe is simple to manufacture and good in process repeatability and reliability.

The invention discloses duplication of array brightness enhancement film by a large-viewing angle micro lens and a production method of a duplicating mould. The invention continuously duplicates micro lens array on a film base without birefraction using halogen free and sulphide free resin containing nano particle. On all directions of a horizontal projection, the micro lens array has the function of gathering and condensing view angle to ordinary light or vibration light through utilizing the refraction and reflection of light from high refraction medium to low refraction medium, and the axial brightness can be improved in a larger range of viewing angle. Through using novel hair metal casting technology, the invention provides a mould which can continuously duplicate micro lens array. The invention is used in backlight source module of a liquid crystal display.

The invention discloses a method for forming a peelable elastomer mask plate on the surface of polymer base materials. The method comprises the steps that firstly, a coating layer for improving caking property is preformed on the surface of the polymer base materials; secondly, patterns, complementary with the mask plate, formed by photoresist are formed on the surface of the polymer base materials through the photolithography technique; thirdly, an elastomer coating layer with a certain thickness is formed again; fourthly, the photoresist is removed, and the peelable elastomer mask plate is obtained. The elastomer mask plate is used for forming patterned photoelectric functional devices on the polymer base materials.

In a method and an apparatus for providing a card carrier for bringing it together with a card, the card is initially provided, and card data are acquired from it. On the basis of this card data, a card-carrier blank having a first identification mark is provided. On the basis of the card data, predetermined data and a second identification mark associated with the predetermined data are printed onto the card-carrier blank so as to form the card carrier. Subsequently, the first and the second identification marks are acquired by the card carrier to determine whether the data applied and the blank belong together. If it is determined that the data and the card-carrier blank belong together, the card carrier is provided for bringing it together with the card.

The invention provides combined stiffness-variable thin film pMUTs and a preparation method thereof. A combined stiffness-variable thin film structure is composed of circular thin film and annular thin film which surrounds the circular thin film in the circumferential direction and is concentric with the circular thin film; according to different working condition demands, the thickness of the circular thin film and the thickness of the annular thin film are adjusted separately to achieve combined stiffness-variable thin film; the overall structure of the combined stiffness-variable thin filmpMUTs sequentially comprises an upper electrode, a vibration thin film piezoelectric driving layer, a lower electrode, a vibration thin film structural layer, a thin film supporting structure and a base structure from top to bottom; when the combined stiffness-variable thin film pMUTs are used in a mode of emitting ultrasonic waves, the circular thin film and the annular thin film are excited according to a certain phase difference, the coupling effect among the circular thin film, a fluid medium and the annular thin film is achieved, and the unit ultrasonic wave emitting power is greatly increased; when the combined stiffness-variable thin film pMUTs are used for receiving the ultrasonic waves, the ultrasonic wide bandwidth receiving performance is achieved through the resonance frequencydeviation of the circular thin film and the annular thin film in the fluid medium. The combined stiffness-variable thin film pMUTs have the high emitting power and wide bandwidth receiving performance.

The invention relates to a process for removing tar oil with gasification gas. At present, the operating cost and the maintenance cost of the present process for removing tar oil are high, and the second pollution of the waste water of tar oil is brought out. The concrete steps of the invention are that waste rubber and plastic used for schizolysis are conveyed to a schizolysis furnace and oil gas mixture and solid charcoal are generated after the heat schizolysis reaction, the oil gas mixture produced by the schizolysis reaction is separated via a rectifying tower and then oil products and gas are generated, and the distillate with the temperature of 200-350 DEG C is separated out as oil washing distillation cut which is employed to absorb the tar oil in the gasification gas which contains tar oil. Compared with the existing technology, the process for removing tar oil in gasification gas has high process reliability, increases the thermal value of the gas, reduces the operation cost , produces no waste water of tar oil, and promotes the added value of the tar product .

The invention provides a photoresist removing method which includes: performing a first ashing process on the photoresist layer through oxygen-containing gas to remove part of the photoresist layer; and performing a second ashing process on the remaining photoresist layer to remove the remaining photoresist layer. Due to the fact that the second ashing process is performed on the remaining photoresist layer through nitrogen-containing gas to remove the remaining photoresist, the problem that during manufacture of a magnetic random access memory (MEAM), when the photoresist is removed through a plasma of the oxygen-containing gas, the oxygen-containing gas can be reacted with a titanium nitride layer to form a titanium oxide layer on the surface of the titanium nitride layer, and a copper metal layer cannot be clearly observed when a process for forming a tunnel junction is performed is solved, and the reliability in forming the tunnel junction is improved.

An organic electroluminescent device includes a first organic thin film transistor, a second organic thin film transistor and at least an organic functional layer. The organic functional layer is disposed between the second organic thin film transistor and the first organic thin film transistor. By applying voltages in the first organic thin film transistor and the second organic thin film transistor at the same time, a voltage difference between the two transistors is produced to make electrons and electric holes move into the organic functional layer and re-combine therein for emitting light. The integration of the organic thin film transistor and the organic electroluminescent device can widen aperture ratio and increase process reliability.

The invention relates to an integrated complete system and process for coal pyrolysis and upgrading. A drying pyrolysis unit, an upgraded coal cooling unit and a humidifying discharge unit are sequentially arranged along a process route in a connecting manner; by arranging the drying pyrolysis unit, coal drying and coal pyrolysis reaction are completed in the same rotary cylinder, so that equipment investment is effectively reduced and the process reliability is improved; by arranging the upgraded coal cooling unit, cold air is adopted for indirect cooling of materials in material distribution tube nests, the equipment is simple, the safety is high, yields of waste water and waste gas are low, and heat is recycled from hot air obtained after heat exchange; by arranging the humidifying discharge unit, a sprayer is adopted to spray water on the upgraded coal for humidifying in the process of the conveying the upgraded coal by a screw conveyer, so that the operation is simple and reliable, the water spraying amount can be adjusted according to the process demands, the product quality is good and the process is environment-friendly.