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51results about How to "Increased process reliability" patented technology

Homogeneous composite transparent conductive film and preparation method and application thereof

The invention belongs to the technical field of optoelectronic information materials, and particularly relates to a homogeneous composite transparent conductive film and a preparation method and application thereof. The homogeneous composite transparent conductive film refers to a plurality of layers of transparent conductive films which are sequentially laminated on at least one side surface of a substrate, and the plurality of layers of transparent conductive films are made of the same material; the multi-layer transparent conductive film is prepared by adopting different magnetron sputtering coating process parameters. The homogeneous composite transparent conductive film disclosed by the invention has excellent performance in the aspects of heating cracking resistance and film-substrate binding force of the surface of a substrate which is not resistant to temperature, and engineering application of the transparent conductive film in corresponding devices can be expanded.
Owner:BAIMTEC MATERIAL CO LTD

Manufacturing method of semiconductor device

The invention relates to a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps: forming a zeroth interlayer dielectric layer around a dummy gate structure by using a first CMP (Chemical Mechanical Polishing) process, and etching a laminated layer formed by the dummy gate structure and a contact etching stop layer, so that the top surface of a dummy gate is exposed and a height difference is formed between the top surface of the dummy gate and the top surface of the zeroth interlayer dielectric layer; then a second CMP process is carried out to reduce the height difference and enable the dummy gate to reach the target thickness, when the second CMP process is carried out, the grinding amount of the zeroth interlayer dielectric layer is larger than that of the dummy gate, and when grinding is finished, the generation risk of the dished defect falls on the dummy gate, so that the thickness of the dummy gate reaches the target thickness. The dished defect on the dummy gate can be removed along with the removal of the dummy gate, so that the risk that obvious dished defects are formed on the surface of the zeroth interlayer dielectric layer is reduced, the risk that the metal gate material remains on the top surface of the zeroth interlayer dielectric layer is reduced, and the process reliability is improved.
Owner:SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD

Light emitting diode

The present disclosure provides a light emitting diode, comprising: an epitaxial layer comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence from bottom to top, a plurality of grooves penetrating the second semiconductor layer and the light emitting layer and exposing the first semiconductor layer; the ODR reflecting mirror is located on the side, away from the light-emitting layer, of the second semiconductor layer and comprises an insulating reflecting layer, a transmission medium layer and a metal reflecting layer, the insulating reflecting layer is located on the surface of the side, away from the light-emitting layer, of the second semiconductor layer, and a plurality of through holes penetrate through the insulating reflecting layer and expose the second semiconductor layer; the transmission dielectric layer covers the side walls of the through holes and / or the side walls of the grooves, and the metal reflection layer is located on the surface of the side, away from the second semiconductor layer, of the insulation reflection layer and fills the through holes. The transmission dielectric layer covers the side wall of the groove and the bottom of the groove and is separated from the metal reflecting layer on one side, far away from the second semiconductor layer, of the insulating reflecting layer; the substrate is located on the side, away from the epitaxial layer, of the ODR reflector or the first semiconductor layer is located on the substrate.
Owner:XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD

Method and device for rectifying trifluoromethanesulfonyl fluoride

The invention provides a method for rectifying trifluoromethanesulfonyl fluoride, which can be used for effectively purifying trifluoromethanesulfonyl fluoride feed gas containing impurity gases such as HF, CO2, SO2 and the like, and comprises the following steps of: obtaining an azeotrope of trifluoromethanesulfonyl fluoride and HF by using a conventional rectifying process, condensing the azeotrope, settling, splitting phases, and rectifying and purifying again, thereby obtaining the trifluoromethanesulfonyl fluoride. The problem that trifluoromethanesulfonyl fluoride and HF cannot be thoroughly separated through azeotropic distillation is solved. The invention also provides a rectification device of the trifluoromethanesulfonyl fluoride, the rectification device comprises a collecting tower, a light component removal tower, a heavy component removal tower, a settling separation tank and a finished product rectification tower which are connected in sequence, continuous rectification preparation of the high-purity trifluoromethanesulfonyl fluoride is realized, and the purity of the high-purity trifluoromethanesulfonyl fluoride is not less than 99.5%.
Owner:PERIC SPECIAL GASES CO LTD

Rotor outer diameter tolerance handling apparatus

This utility model discloses a rotor outer diameter tolerance processing device, which includes a machine base, a vibratory feeder, a first linear module, a lifting cylinder, a clamping cylinder, a grinding clamping part, a receiving plate, a transverse cylinder, a translation module, a grinding motor, a cutting fluid protection device, and a discharge sheet metal part. This application can achieve efficient and precise processing of the outer diameter of the rotor permanent magnet through vibration feeding, automatic clamping, precise grinding, and discharge functions, significantly improving production efficiency and processing accuracy. At the same time, it can adapt to the processing needs of rotors of various specifications, effectively prevent cutting fluid splashing and rotor instability, and has important industrial application value.
Owner:GD GLORY MAGNET TECH CO LTD

An apparatus and method for preparing composite thin films of solar cell materials

This invention discloses an apparatus and method for preparing composite thin films for solar cells. The apparatus includes a lower conveying mechanism, a middle coating mechanism, and an upper adsorption mechanism. A friction mechanism generates static electricity on the surface of a lifting slide to adsorb the thin film. A cutting blade cuts the film to be processed, which is then transferred to the lifting slide surface by a film suction cup. An internal electric cylinder pushes the film off and onto a conveyor belt for automatic unloading. The method includes: electrostatic preparation, lifting slide resetting, film cutting, film adsorption and transfer, film unloading and conveying, and end clamping preparation. This invention achieves automatic cutting, electrostatic adsorption, transfer and bonding, and continuous conveying of the thin film through an integrated design, improving the efficiency and positioning accuracy of thin film composite preparation, and is suitable for the automated production of solar cell materials.
Owner:XINYU UNIV

Light emitting device and display unit

The utility model relates to a light-emitting device and a display unit, the light-emitting device comprises a red light chip, a green light chip, a blue light chip and a substrate, the red light chip, the green light chip and the blue light chip are all arranged on the substrate, and the red light chip is arranged between the green light chip and the blue light chip. The red light chips are prevented from being arranged on the two sides of the light-emitting device, so that the fault probability during processing of the red light chips is reduced, the processing reliability of the red light chips can be improved, and the service life of the red light chips in the light-emitting device is effectively prolonged.
Owner:UNILUMIN GRP

Low-cost preparation method of copper-steel composite bimetal sliding shoe blank for high-pressure plunger pump

PendingCN121976131Aimprove performanceStrong bonding strengthLiquid copperLiquid state
The invention belongs to the technical field of piston shoe preparation, and particularly relates to a low-cost preparation method of a copper-steel composite bimetal piston shoe blank for a high-pressure plunger pump. According to the method, the characteristic that the melting point of copper alloy is lower than that of a steel base material is utilized, a steel material is machined into a sliding shoe base blank with a cavity, then a prefabricated copper alloy blank is loaded into an inner cavity of the steel base blank, and a layer of protective borax covers the inner cavity of the steel base blank; heating in an inert atmosphere protection resistance heating furnace or a reducing atmosphere protection resistance heating furnace to melt the copper alloy into a liquid state, preserving heat for a certain time in a high-temperature environment to infiltrate and diffuse the liquid-state copper alloy to the surface of the solid-state steel base, and then discharging and cooling to solidify the copper alloy in the cavity; and finally, a metallurgically bonded copper-steel bimetal composite sliding shoe blank is prepared.
Owner:XIAN SUPERCRYSYAL SCI TECH DEV CO LTD

Three-dimensional workpiece spraying path automatic planning method and system based on visual point cloud

This invention discloses an automatic planning method and system for spraying paths of 3D workpieces based on visual point clouds, specifically relating to the field of automatic spraying path planning technology. By constructing a spraying space coupling description set and a spraying deployment constraint index, the method achieves a quantitative characterization of the degree of restriction of spraying space in different surface areas. Combined with the safety margin of spraying distance and the adjustable range of spray gun posture, a physical accessibility assessment quantity for spraying is formed, which automatically divides the spraying area into a stable spraying area, a restricted spraying area, and a physically unsprayable area. Thus, in the path generation stage, differentiated strategies such as continuous spraying, segmented compensation, and path reconstruction are adopted for different areas, which significantly improves the coating coverage integrity, thickness consistency, and process reliability of complex 3D workpieces in the actual spraying process. It also enhances the system's adaptability to structural complexity and working condition changes in real coal mining machinery spraying sites and reduces the risk of manual repair and rework.
Owner:ZHIPI ROBOT TECH(JIANGYIN) CO LTD

Chip-to-wafer bonding structure with chip supporting function and preparation method thereof

The invention provides a chip-to-wafer bonding structure with a chip supporting function and a preparation method of the chip-to-wafer bonding structure. According to the method, a polysilazane solution is adopted as a precursor, chip gaps are selectively filled through a spin-coating process, and then the polysilazane solution is converted into a silicon dioxide supporting structure. And the warping problem caused by high temperature and thick film deposition is avoided by utilizing the characteristics of high efficiency and normal-temperature treatment of the spin-coating process. The height of the supporting layer can be accurately controlled by controlling spin-coating parameters, formation of redundant film layers on the top of the chip is avoided, and the subsequent process is simplified. The formed silicon dioxide supporting structure is completely compatible with a standard semiconductor process, chip splitting in the thinning process can be effectively prevented, and the process reliability and economical efficiency are improved. The problems of wafer warping, low process efficiency, high cost and the like caused by filling silicon dioxide through chemical vapor deposition in the prior art are solved.
Owner:BEIJING XINLI TECH INNOVATION CENT CO LTD

A topology-aware spraying trajectory planning method for large-size multi-curvature spacecraft spraying

The present application relates to a kind of topological perception spray trajectory planning methods for large size multi-curvature spacecraft spraying, comprising obtaining spacecraft surface point cloud data and constructing undirected topological graph and constructing the high-dimensional fusion feature vector of each vertex;Spacecraft surface point cloud data is segmented into several spray topological regions based on graph convolutional neural network;Global gravity direction vector is introduced to construct joint optimization objective function on each spray topological region and solve, construct global geodesic distance scalar field to generate smooth spray curve, construct the local spray trajectory of each spray topological region;Global path planning is carried out to spray topological region, and the global optimal region traversal sequence is obtained, and then global spray trajectory is obtained.The present application is suitable for spacecraft complex curved surface heat protection coating spraying scene, effectively eliminates the process defects of large curvature transition zone, significantly improves the thickness uniformity, quality consistency and process reliability of special coating manufacturing of spaceflight.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Burr treatment system and assembling method thereof

The invention discloses a burr treatment system and an assembling method thereof.The burr treatment system comprises a main shaft body, a plurality of restraining parts, a plurality of positioning parts and a plurality of operation cutter sets, the lengths of the multiple operation cutter bodies in each operation cutter set are different, and the lengths of the multiple operation cutter bodies located on the same radial section position of the positioning parts are different; the working ends of the multiple working cutter sets on the multiple positioning parts extend to different height positions, and the lengths of the multiple working cutter bodies located on the same radial cross section position of the positioning parts are different, so that when the working cutter sets rotate along with the main shaft body to work, the working ends of the multiple working cutter sets are located at the same burr position, and the working ends of the multiple working cutter sets are located at the same radial cross section position. The multiple operation cutter bodies with the different lengths rotate to conduct processing operation, so that the multiple operation cutter bodies with the different lengths exist in the burr area to conduct rotating operation, dislocation processing is conducted on the burr areas at different positions through the operation cutter bodies with the different lengths, the processing efficiency is improved, unnecessary single abrasion is reduced, and the service life is prolonged.
Owner:SHOUGANG JINGTANG IRON & STEEL CO LTD

A lathe straight groove machining method based on double-c-axis cooperative motion

PendingCN122593129Areduce transshipmentreduce duplication
The application provides a straight slot processing method based on double-C-axis cooperative motion of a lathe, and solves the problems of multiple clamping, low precision and dependence on special milling equipment in straight slot processing of large rotary components. A side milling head device is installed on a numerical control vertical lathe, a workpiece chuck rotation shaft is used as a first rotation shaft C1, and a milling head swing shaft is used as a second rotation shaft C2; a coordinate transformation relationship between a machine tool coordinate system and a workpiece coordinate system is established, a cooperative motion law of the C1 shaft and the C2 shaft is determined, a tool tip forms a linear motion track in a workpiece reference coordinate system; combined with rough processing layering and track planning of multiple finishing modifications, a numerical control program containing C1, C2 and feeding shaft linkage control is generated after post-processing. The application can complete high-precision processing of the straight slot in the large rotary component on the same equipment, reduces workpiece transfer and repeated clamping, reduces equipment cost, and is suitable for processing of the key groove or positioning groove of a magnetic yoke section of a pumped storage unit.
Owner:CHINA THREE GORGES PROJECTS DEV CO LTD +2

Laser shock peening method based on zonal iterative dual constraint

PendingCN122583758AIncreased process reliabilityStrong process flexibility
The application discloses a laser shock peening method based on partition iteration double constraint, and relates to the technical field of laser processing. The method comprises the following steps: dividing a to-be-processed surface area of a to-be-processed component into a plurality of subareas, and setting laser shock points in each subarea; performing partition iteration double constraint traversal shock; in each iteration, firstly randomly disturbing the macro processing sequence of all subareas, then selecting one point from the unshocked points of each subarea, arranging the selected points according to the disturbed subarea sequence to form a shock subsequence of the current iteration; repeating the iteration until all the points are traversed to form a first layer of shock strengthening layer; and continuously repeating the superposition until a preset shock layer number is reached. The application can significantly inhibit the anisotropy of residual stress and the edge effect, and realize uniform strengthening.
Owner:JIANGSU UNIV

Full-automatic waste medical needle treatment device

The invention relates to the technical field of medical equipment, in particular to a full-automatic waste medical needle treatment device which comprises a treatment body, a fixing assembly used for clamping an injector is arranged at the top of the treatment body, a lifting sliding table ascending and descending in the vertical direction is arranged in the treatment body, and a hot pressing assembly and a needle winding assembly are integrated on the lifting sliding table; the hot pressing assembly is used for heating, softening and flattening a needle head, the needle winding assembly is used for winding the flattened needle head into a cluster, and a disinfection part and a stripping part are arranged on the needle winding assembly; the device further comprises a control device which is used for driving the lifting sliding table to ascend and descend and coordinating the heating flattening action of the hot-pressing assembly, the winding action of the winding needle assembly, the disinfection action of the synchronous disinfection part and the separation action of the stripping part. A clamping fixing and lifting integrated hot pressing and winding structure is adopted, and the processes of heating softening, flattening shaping, winding clustering, disinfection and stripping are combined, so that non-contact treatment of waste needles, effective killing of pathogenic microorganisms and collection of medical waste are achieved.
Owner:南京市江宁医院

A copper electrode laser curing system and method for a topcon solar cell

PendingCN122161202AAchieve safe solidificationRapid cross-linkingElectrical batteryHigh energy
The application discloses a kind of copper electrode laser curing system and method of TOPCon solar cell, the system includes mid-infrared laser generation module, beam shaping and energy management module, precision motion and positioning platform and synchronous control and monitoring module.The method used is: after coating copper paste on the back silver seed layer of TOPCon battery, laser beam is irradiated, by accurately controlling laser energy density and pulse width, energy is selectively resonant absorbed by copper paste organic matter, millisecond level rapid curing is realized, while ensuring that energy density is lower than the damage threshold of lower layer aluminum oxide / silicon nitride passivation film, so that the base temperature rise is lower than 200 DEG C.The application overcomes the defects of traditional thermal curing, such as low efficiency, high energy consumption and easy damage to passivation layer, and provides an efficient, reliable and non-damage battery performance industrialization solution for TOPCon battery low-cost "de-silverization".
Owner:WUXI JIYAO LASER TECHNOLOGY CO LTD

Phase-change composite heat-conducting gasket with vertical corrugated channels and preparation method of phase-change composite heat-conducting gasket

The invention relates to the technical field of heat dissipation, in particular to a phase-change composite heat-conducting gasket with vertical corrugated channels and a preparation method of the phase-change composite heat-conducting gasket. The invention aims to solve the problems of high hardness, poor compression compliance and large interface contact thermal resistance of the existing vertical orientation carbon-based heat conduction material and improve the actual heat dissipation efficiency of the thermal interface material in a high-power electronic device. According to the main scheme, high-heat-conductivity graphene paper or graphite paper serves as a framework base material, a composite heat conduction core with vertically-arranged bent heat conduction channels inside is constructed, and a phase-change material skin layer is combined on the surface of the composite heat conduction core. Rigid compression of the material can be converted into geometric bending deformation by utilizing an internal vertically-oriented micro-ripple structure (the section can be sine waves, sawtooth waves, trapezoidal waves or asymmetric ripples and the like), so that the compression resilience and the stress buffering capacity of the material are effectively improved; and meanwhile, the interface contact thermal resistance is effectively reduced by virtue of the self-adaptive wetting characteristic of the phase change material layer on the surface at the working temperature.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

A sealing structure for a box transformer upper moving cabin

The application relates to the sealing technical field of wind power generation equipment, and particularly discloses a sealing structure for a box transformer upper moving machine cabin, which comprises a sealing strip and a joint assembly, the sealing strip is internally provided with a hollow cavity, the inner side is fixedly sleeved with a first base strip and a second base strip, and both ends are provided with buckling seats; the joint assembly comprises a fixed shaft seat, a movable shaft cover, a fixed pin buckle and a rotating pin buckle, a sealing slip ring, a spring and a sliding pin are arranged between the movable shaft cover and the fixed shaft seat, and are used for realizing lifting locking and flexible buffering; the rotating pin buckle can be rotated by 90 degrees and connected with the box transformer; the structure is closed and compact, and the sealing is reliable; the sealing function and the connecting structure are highly integrated in the application structure; the application has good elastic adaptability, dynamic compensation capacity and rapid assembly performance, and is particularly suitable for high-altitude butt joint sealing scenes between a wind power machine cabin and a box transformer.
Owner:JIANGSU CHANGYOU ENVIRONMENTAL PROTECTION TECH CO LTD

Negative pressure jet flow sand washing and bailing device and method

The invention provides a negative pressure jet flow sand washing and bailing device and method. The negative pressure jet flow sand washing and bailing device mainly comprises a drilling pump, a drilling rod, a packer, a double-wall drilling rod, a sand bailing cylinder body, a negative pressure generator body and a sand disturbing head body; a drill rod is connected with a double-wall drill rod inner pipe through threads, the double-wall drill rod and a shaft annulus are sealed and separated through a packer, power liquid enters a double-wall drill rod annulus channel through the packer, the double-wall drill rod inner pipe is a reverse liquid outlet channel, and flowing liquid enters a sand disturbing head body high-pressure cavity through a sand bailing cylinder body annulus channel and a negative pressure generator body annulus channel. When the fluid passes through the high-pressure cavity of the sand washing head body, most of the fluid is jetted upwards at a high speed through the jet flow nozzle, a vacuum low-pressure area is formed, and the fluid flows out of a wellhead through the inner pipe of the double-wall drill rod and the drill rod. The sand bailing device is simple in structural principle and high in sand bailing efficiency, the pressure of a bottom hole flow field during sand bailing operation can be reduced, and leakage and pollution to a production layer during sand bailing operation are reduced.
Owner:王开俊

Method for manufacturing soi material and soi wafer

ActiveCN121772710Bavoid damagesmooth interfaceWaferIon implantation
The application belongs to the technical field of semiconductor processing and manufacturing, and provides a preparation method of SOI material and SOI wafer, which comprises sequentially preparing an aluminum nitride layer, an aluminum oxide layer and a top layer of silicon on a first substrate to obtain a first bonding body; providing a support substrate provided with a buried oxygen layer as a second bonding body, and bonding the first bonding body and the second bonding body to obtain a bonding structure; and then sequentially removing the first substrate, the aluminum nitride layer and the aluminum oxide layer in the bonding structure to expose the top layer of silicon and obtain the SOI material. The ion implantation process is replaced and omitted by the combination of epitaxial growth, bonding and removal processes, so that the performance problems caused by the introduction of various defects can be avoided, the accurate control of the thickness of the top layer of silicon and the quality of the buried oxygen layer can be facilitated, the complexity of the process and the process cost can be reduced, and the application is particularly suitable for the batch production of 300mm and above large-size SOI wafers.
Owner:TJ INNOVATIVE SEMICON SUBSTRATE TECH CO LTD

Low-temperature non-ferrous extrusion direct forming machine, forming method and production line

The present application belongs to the technical field of low-temperature non-ferrous metal extrusion forming, and particularly relates to a low-temperature non-ferrous metal extrusion direct forming machine, a forming method and a production line, which are convenient for extruding raw materials such as cutting materials, broken materials, corner materials, waste materials and broken materials into low-temperature non-ferrous metal finished products. First, the raw material variety is diversified. Second, most of the impurities on the surface of the raw material can be removed. Third, inert gas is introduced into the inner cavity of the extrusion cylinder, and the air in the inner cavity of the extrusion cylinder and the inner cavity of the forming die is discharged to prevent the metal from being oxidized. Fourth, the raw material is softened first and then extruded, and the pressure of each extrusion is reduced through multiple extrusions, thereby improving the processing reliability. Fifth, multi-stage feeding is realized, the technical problems of uneven feeding and insufficient feeding are solved, and the yield is increased. Sixth, the piston body extrudes the material to be formed in the extrusion direction L2, and the cutting edge of the scraper cuts off the softened raw material entering the material bin section from the discharge port of the feeding structure, thereby reducing the resistance received by the extrusion device. Seventh, the forming die is replaceable.
Owner:德阳宏广智能装备有限责任公司

Bearing part, bearing device and process method suitable for bearing device

The invention relates to the technical field of semiconductors, and discloses a bearing part, a bearing device and a process method suitable for the bearing device. The bearing part comprises a substrate; the first surface of the substrate is provided with at least one groove-shaped bearing unit; the bearing unit is used for bearing a chip to be subjected to process treatment, and at least one protruding part is arranged on at least one of two surfaces, oppositely arranged in the borne direction, of the chip; when one of the two surfaces of the chip is subjected to process treatment, the other surface, which is not subjected to process treatment, of the two surfaces faces the bearing unit, and when the other surface facing the bearing unit is provided with a protruding part, the protruding part is located in the groove of the bearing unit. And the bearing part can improve the process reliability, so that the yield of the chip is improved.
Owner:BEIJING CHIPTRON TECH CO LTD

Separation gate trench MOSFET device and preparation method thereof

The invention discloses a preparation method of a separated gate trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, which comprises the following steps of: 1) selecting a substrate with an N-epitaxial layer, and photoetching a trench on the N-epitaxial layer through a hard mask; 2) removing the mask plate, and performing wet oxygen oxidation to form a first oxide layer; (3) a layer of polycrystalline silicon is deposited on the first oxide layer through chemical vapor deposition, then redundant polycrystalline silicon is etched away through etching, and the remaining polycrystalline silicon reserved in the groove is polycrystalline silicon I; (4) the redundant oxide layer is etched away; (5) growing a second polycrystalline silicon oxide layer, and performing gate back etching; and 6) filling the polysilicon gate in the groove through chemical vapor deposition again, and performing dry back-etching until the polysilicon gate is flush with the upper surface of the N-type epitaxial layer. According to the split gate trench MOSFET device, a split gate structure is adopted, and a produced power device has higher process stability and reliability, higher switching speed, smaller gate-drain capacitance and higher application efficiency.
Owner:DEXING YIFA POWER SEMICON CO LTD

Preparation method of air insulation layer based on back-to-back integration and semiconductor device

The present invention belongs to the field of semiconductor device preparation, and specifically relates to a method for preparing an air insulation layer based on back-to-back integration and a semiconductor device, wherein the method for preparing the air insulation layer comprises the following steps: Step 1: sequentially performing a silicon photonic front-end process and a silicon photonic back-end process on a first SOI wafer, wherein the back-end process does not include making a thermal adjustment electrode; bonding with a carrier wafer; and removing the silicon substrate of the first SOI wafer; Step 2: etching and hollowing out to form an air insulation layer, bonding an epitaxial wafer to the first wafer, wherein the epitaxial wafer isolates the air insulation layer from the outside to form a closed cavity. The air insulation layer formed by the present invention can reduce the complexity of the process design while reducing the additional power consumption brought by the thermal adjustment device, and at the same time, improve the stability of the semiconductor device without affecting the subsequent process and packaging; the size and depth controllability of the formed air insulation layer are increased, thereby improving the process reliability.
Owner:UNITED MICROELECTRONICS CENT CO LTD

Semiconductor device, cellular structure of semiconductor device and mask plate

The utility model provides a semiconductor device, a cellular structure of the semiconductor device and a mask plate, the semiconductor device comprises a plurality of cells, at least one of the cells comprises a first control gate part and a second control gate part, the first control gate part and the second control gate part are separated from each other, and the first control gate part and the second control gate part are separated from each other. The first control gate part and the second control gate part are connected through the third control gate part, the first control gate part, the second control gate part and the third control gate part form a control gate, the first control gate part and the second control gate part are located in an active region of the semiconductor device, and the third control gate part is located in a transition region of the semiconductor device. The transition region is located between the active region and a terminal region of the semiconductor device. According to the semiconductor device, the gate-drain capacitance is controlled by controlling the widths of the first control gate part and the second control gate part and the distance between the first control gate part and the second control gate part.
Owner:HANGZHOU SILAN MICROELECTRONICS CO LTD

Preparation method of bergamolactone nanocrystals

The invention relates to the technical field of medicines, and discloses a preparation method of bergamolactone nanocrystals, which comprises the following steps: S1, weighing bergamolactone and a stabilizer according to a mass ratio of 5: (1-4), then adding a proper amount of an organic solvent for dissolving, and then removing the organic solvent by adopting a reduced pressure rotary evaporation process to obtain a medicine / stabilizer film; s2, performing hydration treatment on the drug / stabilizer film obtained in the S1 to obtain a drug solution; s3, after hydration is completed, the medicine solution in the S2 is subjected to dispersion treatment, and a medicine suspension is prepared; and S4, adding the medicine suspension prepared in the S3 into a medium grinding chamber, and carrying out grinding treatment to obtain a BER nanocrystalline suspension, namely BER-NCs. According to the technical scheme, the problems of low solubility and poor bioavailability of bergamolactone in water can be solved.
Owner:CHONGQING MEDICAL & PHARMA COLLEGE

A modular, customizable motor system and its combination method

This invention discloses a modular, customizable motor system and its combination method, belonging to the field of motor system technology. It includes a power module, a functional module, and a control module. The power module includes a stator, a rotor, a pair of end caps, and a housing. The stator windings are fixedly connected inside the housing. The rotor passes through the central area of ​​the stator, and its two ends are rotatably connected to both ends inside the housing via bearings. The functional module includes a rear cover, several crown spring connectors, and an equal number of pin-type copper terminals. The control module is fixedly installed inside the rear cover and fixedly connected to several crown spring connectors. The pair of end caps are fixedly connected to both ends of the housing, with one end cap fixedly connected to the rear cover. The terminals of several pin-type copper terminals are fixedly connected to the end of the stator near the rear cover. The pin-type copper terminals are sequentially inserted into the crown spring connectors, achieving fast, reliable, and reversible electrical connections, solving the problems of poor soldering and difficult maintenance in traditional methods.
Owner:ZHEJIANG LINIX MOTOR CO LTD

Portable metallographic sample inlaying machine

This invention relates to the field of metallographic specimen technology, and more particularly to a portable metallographic specimen mounting machine, comprising a housing, a mounting cylinder fixedly connected to the housing, a lower mold slidably connected inside the mounting cylinder, a detachably threaded cap connected to the mounting cylinder, a temperature control module and an exhaust module disposed on the mounting cylinder, an upper mold slidably connected to the mounting cylinder and sealed to the cap, a first driving member fixedly connected inside the cap, and an elastic pressing member fixedly connected to the telescopic end of the first driving member and slidably connected to the upper mold and sealed to the upper mold. This invention uses the elastic pressing member to press and fix the metallographic specimen throughout the mounting process, thereby ensuring the stability of the metallographic specimen during mounting, improving the positional accuracy and process reliability of the mounting, and simultaneously absorbing the force between the metallographic specimen and the pressing post, reducing the probability of specimen breakage and deformation, and ensuring the morphology of the metallographic specimen.
Owner:LAIZHOU WEIYI EXPERIMENTAL MASCH MFG CO LTD

A precision grinding method for a tool assembly, a tool assembly and an application

The application discloses a precision grinding method for a cutter assembly, the cutter assembly and application, and the cutter assembly has a precision ground cutter head, cutter square and cutter rod, and the precision grinding method comprises the following steps: welding the cutter head to the end of the cutter square which is processed by grinding to form an integrated cutter; coarsely grinding the cutter by fixing the cutter on a coarse grinding seat, determining the zero point of the cutter head, adjusting the first grinding wheel based on the cutter band parameters and the first grinding parameters and the zero point to coarsely grind the two sides and the end of the cutter head, and obtaining left and right cutter surfaces and a coarsely ground auxiliary surface; finely grinding the cutter by fixing the cutter on a fine grinding seat, determining the cutter reference surface, adjusting the second grinding wheel based on the second grinding parameters and the zero point to finely grind the two sides of the cutter head, and obtaining left and right cutter bands; and adjusting and positioning the finely ground cutter by performing a planar finishing treatment on the finely ground cutter and adjusting the cutter to be fixed on the cutter rod according to a preset rotation radius. The application can stably and efficiently prepare the cutter with high precision, excellent blade geometry and surface quality.
Owner:ZHEJIANG GOLDEN CONNECTION TECH CO LTD