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Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof

A pressure sensor, piezoresistive technology, applied in the field of microelectromechanical system (MEMS) sensor design, can solve the problem of reducing device sensitivity, achieve high process reliability, reduce steps, and avoid the effect of strain film cracking

Inactive Publication Date: 2013-02-27
PEKING UNIV
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AI Technical Summary

Problems solved by technology

At present, the micro-pressure pressure sensor usually adopts the beam-membrane island structure. The linearity is increased by adding a fixed beam on the front of the strain membrane or retaining the island structure in the center of the back of the membrane. However, these methods have the disadvantage that the linearity is also reduced while ensuring the linearity Device Sensitivity

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  • Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof
  • Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof
  • Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof

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Embodiment Construction

[0034] The present invention will be further described below through specific embodiments and accompanying drawings.

[0035] The preparation method of the MEMS piezoresistive pressure sensor in this embodiment is to manufacture four groups of along the substrate by ion implantation at the midpoint of the edge of the square substrate (other embodiments can also use a circular substrate). The varistors with symmetrical distribution of crystal orientation, the number of varistors in each group can be arbitrary (generally 1 to 5), and this embodiment is 4; before anisotropic etching on the back of the sensor, increase the number of varistors on the front A photolithography process etches stress-concentrated silicon islands around the front varistor, and after the etching is completed, the varistors are distributed on the stress-concentrated silicon islands. Specifically, the steps of the method include:

[0036] 1) Select (100) crystal plane single crystal silicon wafer or (100...

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Abstract

The invention relates to a piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and a preparation method thereof; the piezoresistive pressure sensor of the MEMS comprises a strain film and a voltage dependent resistor; an island structure is distributed on the frontal surface edge of the strain film; and the voltage dependent resistor is positioned on the island structure. When the piezoresistive pressure sensor of the MEMS is prepared, the production of the island structure on the frontal surface of the film is carried out before the anisotropic etching of a back cavity, so that the cracking of the strain film is avoided when the island structure is produced on the frontal surface. The pressure sensor of the invention has high sensitivity and high linearity; and the preparation method thereof is compatible with the traditional technique, and has high rate of finished products.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical system (MEMS) sensor design, and relates to a MEMS piezoresistive pressure sensor and a method for manufacturing the pressure sensor on a single wafer by using a MEMS processing technique. Background technique [0002] MEMS (Micro Electro Mechanical System) is an emerging interdisciplinary high-tech research field. The piezoresistive pressure sensor based on MEMS technology is widely used in the modern market due to its excellent accuracy and reliability and relatively cheap manufacturing cost. Silicon-based piezoresistive pressure sensors have been widely used since the discovery of the piezoresistive properties of silicon materials in the mid-1950s. The working principle of a typical piezoresistive pressure sensor is to make four pressure-sensitive resistors in the stress concentration area by diffusion or ion implantation on a square or circular silicon strained film, and the four resis...

Claims

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Application Information

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IPC IPC(8): G01L1/18B81B7/00B81C1/00
Inventor 黄贤张大成赵丹淇何军杨芳田大宇刘鹏王玮李婷罗葵
Owner PEKING UNIV
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