Integrated RF MEMS switch

Abstract

The RF switch based on micro electromechanical technology includes micro mechanism (MEMS) part and RF part, and has mobile switch structure for the switching function is set on the MEMS substrate. The MEMS part and RF part are first manufactured separately, and the MEMS substrate and RF substrate are then aligned and bonded together. The switch includes several mobile electrodes and has two kinds of drive states including upward drawing state and downward drawing state. The switch in the technological scheme of the present invention has fast switching speed, low drive voltage, high stability and relatively simple manufacture process with high outer contamination resistance.

Description

technical field [0001] The present invention relates to the technical field of radio frequency technology and micro-electro-mechanical system (micro-electro-mechanical system, MEMS). Specifically, the present invention relates to a radio frequency (RF) switch developed using micro-electromechanical system (MEMS) technology. Background technique [0002] Radio frequency microelectromechanical system (RF MEMS) switch is one of the basic components of electronic circuit systems such as wireless communication, and it is widely used in radar detection and wireless communication. RF MEMS switches have a variety of drive methods, including electrostatic drive, electromagnetic drive, thermoelectric drive, piezoelectric drive, and shape memory alloy drive. Among them, electrostatic drive has attracted widespread attention because of its simple structure, easy processing and compatibility with IC technology. Compared with traditional solid-state switches com...

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Problems solved by technology

If the length of the force arm is kept constant, the support point 2 will inevitably move outward, so that the area of ​​the entire chip will increase

In addition, when the switch is cut off, the cantilever beam end contact points 8a, 5 and 8b cannot effectively contact the points 7a, 6a, 6b and 7b on the coplanar waveguide, thus deteriorating the isolation or insertion loss of the switch

[0006] also, Figure 1A , Figure 1B , Figure 1C These three types of switches all have a common defect, that is, the freely suspended cantilever beam is affected by the shortcomings of the mechanical characteristics. Since one end is suspended in the air, uncontrolled mechanical vibration will occur during use, which will affect the RF performance of the switch. Negative Effects

Due to the inherent torsion of the contact end of a single cantilever beam switch structure, it is impossible to ensure that the bridge electrode on the cantilever beam is always in linear contact with the transmission line on the substrate. This type of switch will exhibit an asymmetrical electrical characteristic, and, due to the contact resistance presence, will slow down operation and limit the efficiency of these RF MEMS switches

These switches are susceptible to contamination from impurities generated during manufacture and use

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