The invention discloses a thin film transistor, an active element array base plate and a liquid crystal display panel, wherein the thin film transistor comprises a base plate, a gate, a gate insulating layer, a channel layer, a source electrode and a drain electrode, the gate and the gate insulating layer are arranged on the base plate, and the gate insulating layer is covered on the gate. The channel layer is arranged on the gate insulating layer which is arranged on the upper of the gate, and the source electrode and the drain electrode are respectively arranged on a part of the channel layer, which are arranged on the two sides of the gate. At least one of the gate, the source electrode and the drain electrode is equipped with a conductive interlayer which is equipped with a bottom conductive layer and a top conductive layer and is located between the bottom conductive layer and the top conductive layer, the materials of the bottom conductive layer and the top conductive layer are different, and substantially, the thickness of the bottom conductive layer is smaller or equal to 150 angstrom. An electrode with the above structure is capable of avoiding that the gate, the source electrode and the drain electrode produce an undercut phenomenon during processing, thereby corresponding thin film transistors are capable of normally operating to maintain the element characteristics and the normal operation of a pixel and further maintain the display quality of the corresponding liquid crystal display panel.