Preparation of dodecagon zinc oxide whispering-gallery mode ultraviolet faint laser heterojunction diode

A technology of dodecagonal and whispering gallery modes, applied in the structure of optical resonant cavity, the structure of active area, etc., can solve the problem of low quality factor and achieve high quality factor, stable performance and low optical loss

Inactive Publication Date: 2012-06-13
SOUTHEAST UNIV
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Problems solved by technology

In the same year, our group reported the whispering gallery mode ultraviolet laser radiation in the hexagonal ZnO microrod / GaN thin film heterojunction in Advanced Materials. The results of these two cases of electrically pumped laser radiation showed a clear mode laser radiation, however, its quality factor is low, and there is still a large distance from practical microlasers for industrial applications

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  • Preparation of dodecagon zinc oxide whispering-gallery mode ultraviolet faint laser heterojunction diode
  • Preparation of dodecagon zinc oxide whispering-gallery mode ultraviolet faint laser heterojunction diode
  • Preparation of dodecagon zinc oxide whispering-gallery mode ultraviolet faint laser heterojunction diode

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Embodiment Construction

[0021] (Take the preparation of a dodecagonal micro-zinc oxide rice rod micro-laser heterojunction diode with a cavity diameter of 3.37 microns as an example):

[0022] Step 1: Mix and grind zinc oxide powder and carbon powder with a purity of 99.99% at a mass ratio of 1:1, and fill 0.2 grams of the mixture into a ceramic boat with a length of 4 cm, a width of 1 cm, and a depth of 1 cm. After a 1.5cm*3cm silicon wafer was ultrasonically cleaned for 5 minutes with acetone, absolute ethanol and deionized water in sequence, it was washed dry with high-pressure nitrogen, and the polished side of the silicon wafer was covered on the middle of the ceramic boat. Put the ceramic boat into the middle of a quartz test tube with a length of 25 cm and a diameter of 3 cm, and then push the quartz tube horizontally into a tube furnace with a temperature in the high temperature zone of about 1100°C-1150°C. After 20 to 30 minutes of reaction, the quartz test tube was quickly taken out from th...

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Abstract

The invention discloses a preparation method of a dodecagon zinc oxide whispering-gallery mode ultraviolet faint laser heterojunction diode combined with a p type gallium nitride substrate. The method comprises the following steps: preparing a zinc oxide microrod with a dodecagon cross section by utilizing a high temperature gas phase transmission method; distributing the zinc oxide microrod on the p type gallium nitride substrate to form a pn structure device, depositing a polymethyl methacrylate film on a surface of the pn structure device by utilizing a spin coating method, exposing an upper surface of the zinc oxide microrod from the polymethyl methacrylate film by utilizing reaction ion beam etching, and preparing an electrode on a surface of the p type gallium nitride and a surface of the zinc oxide microrod by employing magnetron sputtering technology so as to form the whispering-gallery mode ultraviolet faint laser heterojunction diode. According to the method, high quality whispering-gallery mode faint laser is formed by utilizing inner wall total reflection of light in the dodecagon zinc oxide microrod, and different requirements of ultraviolet laser output wavelengths can be realized through selecting zinc oxide microrods with different dimensions.

Description

technical field [0001] The invention designs and utilizes a high-temperature gas-phase transmission method to prepare a high-quality single-crystal zinc oxide microrod array with a dodecagonal cross-section, and combines a single dodecagonal zinc oxide microrod with a p-type gallium nitride substrate to form a semiconductor pn junction. Polymethyl methacrylate is used to cover the surface of the pn junction, and reactive ion etching is used to expose the surface of zinc oxide, and then ohmic contact electrodes are respectively prepared on the surface of p-type gallium nitride and zinc oxide microrods. The semiconductor pn junction can generate ultraviolet electroradiation at a lower driving current, and can realize high-quality ultraviolet electric pumping whispering gallery mode micro-laser radiation when the driving current is increased. Background technique [0002] In 1997, Japanese scientists first observed ultraviolet laser radiation generated by low-threshold optical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/32
Inventor 徐春祥戴俊朱刚毅石增良
Owner SOUTHEAST UNIV
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