Grapheme-quantum dot two-color light detector based on composite structure, and preparation method thereof

A composite structure and quantum dot technology, applied in the field of photodetectors, can solve problems such as absorption band limitation, slow response speed, and large dark current, and achieve the effects of improving utilization, reducing dark current, and improving responsivity

Active Publication Date: 2018-09-18
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2012, Gerasimos Konstantatos proposed mixing quantum dots and graphene to prepare a quantum dot-graphene hybrid photodetector. The device has high responsivity, but there are shortcomings such as too much dark current, slow response speed, and low switching ratio.
[0008] Alt

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grapheme-quantum dot two-color light detector based on composite structure, and preparation method thereof
  • Grapheme-quantum dot two-color light detector based on composite structure, and preparation method thereof
  • Grapheme-quantum dot two-color light detector based on composite structure, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0051] A method for preparing the above-mentioned graphene-quantum dot dual-color photodetector based on a composite structure includes the following steps:

[0052] [a] Using the metal substrate 1 as the base, grow an insulating layer I2;

[0053] [b] Transfer a layer of graphene on the surface of the insulating layer I2 to obtain graphene I3;

[0054] [c] Deposit a metal layer on the surface of the graphene I3, and then expose the middle of the graphene I3 by photolithography, thereby fabricating two electrodes I4;

[0055] [d] After the treatment of step [c], spin-coating a layer of solution for preparing quantum dots I5 on the surface of the exposed graphene I3 by spin coating, and then dry to obtain quantum dots I5;

[0056] [e] After the treatment in step [d], a dielectric layer 6 is grown on the surface of the electrode I4 and the quantum dot I5;

[0057] [f] Transfer a layer of graphene on the surface of the dielectric layer 6 to obtain Graphene II 7;

[0058] [g] Deposit a metal ...

Example Embodiment

[0062] Example 1

[0063] In this embodiment, the material of quantum dot I5 is organic-inorganic hybrid perovskite FAPbBr 3 QDs, FAPbBr 3 The response of QDs-graphene hybrid photodetector to light of different wavelengths is as follows image 3 Shown. The graphene-quantum dot hybrid photodetector made of this quantum dot material can detect light with a wavelength in the range of 400-550nm. The material of quantum dot Ⅱ 9 is CuInS 2 / ZnS QDs, CuInS 2 / ZnS QDs-graphene hybrid photodetector responds to different wavelengths of light as Figure 4 Shown. The graphene-quantum dot hybrid photodetector made of this quantum dot material can detect light with a wavelength in the range of 625-675 nm. It can be seen that the wavelengths of the light with the strongest response of the two photodetectors are different, and the sensitivity of the two photodetectors to the light in the range of 550-625nm is low, and detection cannot be achieved. After the two types of photodetectors are conn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of light detectors, and particularly relates to a graphene-quantum dot two-color light detector based on a composite structure, and a preparation method ofthe graphene-quantum dot two-color light detector. Aiming at the defect that one existing graphene-quantum dot hybrid light detector can only detect light with wavelength in a narrow range due to therestriction of quantum dots on light absorption bands, the graphene-quantum dot two-color light detector is characterized by comprising eight layers of lamellar structures including a metal substrate, an insulating layer I, graphene I, quantum dots I, a dielectric layer, graphene II, quantum dots II and an insulating layer II from bottom to top, wherein two electrodes I are arranged on two sidesof the quantum dots I, the two electrodes I serve as a source electrode and a drain electrode respectively; two electrodes II are arranged on two sides of the quantum dots II, the two electrodes II serve as a source electrode and a drain electrode respectively; and the quantum dots I and the quantum dots II are manufactured by using two quantum dot materials respectively. The graphene-quantum dottwo-color light detector is suitable for polychromatic light detection.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a graphene-quantum dot two-color photodetector based on a composite structure and a preparation method thereof. Background technique [0002] Graphene is a single-layer two-dimensional planar crystal material formed by carbon atoms arranged in a hexagonal honeycomb shape. Since the team of British physicists Andre Geim and Konstantin Novoselov prepared single-layer graphene at room temperature by mechanical exfoliation in 2004, due to its unique structure and excellent mechanical, The electrical, thermal and optical properties have gradually become a research hotspot. Its atomic layer thickness is only 0.335nm, but it is also the hardest nanomaterial. The unconventional half-integer quantum Hall effect can be observed at room temperature. Intrinsic mobility up to 2×10 5 cm 2 V -1 the s -1 . Graphene is a semi-metallic zero-bandgap material whose bandgap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/14683
Inventor 王军朱瑶瑶潘锐苟君陈超
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap