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Growing and preparing method of cubic phase oxygen zinc magnesium single crystal film

A single crystal thin film, zinc and magnesium technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effect of improving the photoresponsivity

Inactive Publication Date: 2010-09-22
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the use of metal organic chemical vapor deposition (MOCVD) method to achieve cubic phase MgZnO single crystal thin film has not been reported

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Using low-pressure MOCVD equipment, a c-plane sapphire (0001) substrate is selected. Dimethylmagnesocene (MCp2Mg) was used as the magnesium source, and the source temperature was controlled at 50°C; diethylzinc (DEZn) was used as the zinc source, and the source temperature was controlled at -5°C; high-purity oxygen was used as the oxygen source. The carrier gas was nitrogen with a purity of 99.999%. The specific preparation process conditions are as follows:

[0021] The growth chamber pressure was 2 x 10 4 Pa, the growth temperature is 450°C. The molar flow rates of Mg and Zn entering the growth chamber are 40 μmol / min and 0.45 μmol / min, respectively; the molar flow rate of O is 0.07 mol / min, making the II / VI ratio far less than 1 (about 1:3000).

[0022] The transmission spectrum shows that the absorption edge of the film is located near 200nm. The crystal quality of the film was measured by twin-crystal X-ray diffraction, and the results showed that the MgZnO fil...

Embodiment 2

[0024] Using low-pressure MOCVD equipment, a c-plane sapphire (0001) substrate is selected. Dimethylmagnesocene (MCp2Mg) was used as the magnesium source, and the source temperature was controlled at 40°C; diethylzinc (DEZn) was used as the zinc source, and the source temperature was controlled at -5°C; high-purity oxygen was used as the oxygen source. The carrier gas was nitrogen with a purity of 99.999%. The specific preparation process conditions are as follows:

[0025] The growth chamber pressure was 2 x 10 4 Pa, the growth temperature is 450°C. The molar flow rates of Mg and Zn entering the growth chamber are 18 μmol / min and 0.5 μmol / min, respectively; the molar flow rate of O is 0.07 mol / min, making the II / VI ratio far less than 1 (about 1:3000).

[0026] The transmission spectrum shows that the absorption edge of the film is located near 220nm. The crystal quality of the film was measured by twin-crystal X-ray diffraction, and the results showed that the MgZnO film...

Embodiment 3

[0028] Using low-pressure MOCVD equipment, a c-plane sapphire (0001) substrate is selected. Dimethylmagnesocene (MCp2Mg) was used as the magnesium source, and the source temperature was controlled at 40°C; diethylzinc (DEZn) was used as the zinc source, and the source temperature was controlled at -5°C; high-purity oxygen was used as the oxygen source. The carrier gas was nitrogen with a purity of 99.999%. The specific preparation process conditions are as follows:

[0029] The growth chamber pressure was 2 x 10 4 Pa, the growth temperature is 450°C. The molar flow rates of Mg and Zn entering the growth chamber are 18 μmol / min and 2 μmol / min, respectively; the molar flow rate of O is 0.07 mol / min, making the II / VI ratio far less than 1 (about 1:3000).

[0030] The transmission spectrum shows that the absorption edge of the film is near 240nm. The crystal quality of the film was measured by twin-crystal X-ray diffraction, and the results showed that the MgZnO film was cubic (...

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Abstract

A growing and preparing method of a cubic phase oxygen zinc magnesium single crystal film belongs to the technical field of semiconductor photoelectric material preparation. In the method, an LP-MOCVD method is utilized to grow a cubic phase MgZnO film at low-temperature and oxygen-enrichment conditions; the growing conditions are as follows: sapphire and magnesium oxide are selected as substrates; the pressure of a growth chamber is 2*104Pa; the growth temperature is 280-450 DEG C; the carrier gas is 99.999% nitrogen; MCp2Mg is used as a magnesium source, the temperature of the magnesium source is controlled at 40-50 DEG C, and the molar flow is 18-40 mu mol / min; DEZn is used as a zinc source, the temperature thereof is controlled at -5 DEG C, and the molar flow is 0.45-3 mu mol / min; and the high-purity oxygen is used as an oxygen source, and the molar flow thereof is 0.07 mol / min, thus the proportion of the II-VI groups is far less than 1. The cubic phase oxygen zinc magnesium single crystal film prepared by the invention has high crystallization quality and good repeatability; and the coverage area of absorption edges of the film is 200-280nm.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic material preparation, and relates to a method for growing and preparing a cubic-phase oxygen-zinc-magnesium single crystal thin film by using a low-pressure metal-organic chemical vapor deposition method. Background technique [0002] In recent years, semiconductor photodetector devices operating in the deep ultraviolet region (200-300nm) have received more and more attention, because this type of device is widely used in flame detection, biochemical agent detection, air-to-air communication, Missile tail flame detection, and pollution detection of air and water. As an excellent wide-bandgap semiconductor material, MgZnO thin film quickly became a research hotspot and became a candidate material comparable to AlGaN. In 2002, Choopun et al. (Realization of band gap above 5.0eV in metastable cubic-phase MgxZnl-xO alloy films, S. Choopun, R.D.Vispute, W.Yang, R.P.Sharma, T.Venka...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B29/22
Inventor 王立昆张吉英郑剑单崇新申德振姚斌赵东旭李炳辉张振中
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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