Solar cell device and preparation method thereof
A technology for solar cells and devices, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of low energy conversion efficiency of solar cells
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[0033] Please also see figure 2 , the preparation method of the solar cell device 100 of an embodiment, it comprises the following steps:
[0034] Step S110 , spin coating a suspension containing rhenium oxide, electron buffering material and hole buffering material on the surface of the anode 10 to prepare the hole buffering layer 20 .
[0035] The anode 10 is indium tin oxide glass (ITO), fluorine doped tin oxide glass (FTO), aluminum doped zinc oxide glass (AZO) or indium doped zinc oxide glass (IZO).
[0036] In this embodiment, the pretreatment of the anode 10 includes removing organic pollutants on the surface of the anode 10 and performing oxygen ion treatment on the anode 10 . The anode 10 is ultrasonically cleaned with detergent, deionized water, acetone, ethanol, and isopropanone for 15 minutes to remove organic pollutants on the surface of the substrate 10; the anode 10 is treated with oxygen ion for 5 minutes to 15 minutes, and the power is 10 ~50W.
[0037] Rh...
Embodiment 1
[0050] The structure prepared in this embodiment is ITO / PEDOT:PSS:Re 2 o 7 :LiF / P3HT:PCBM / LiF / Al solar cell devices.
[0051] First, carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; clean the conductive substrate Perform oxygen plasma treatment, the treatment time is 5-15min, and the power is 10-50W; Spin coating containing PEDOT:PSS, Re on the above substrate 2 o 7 and LiF suspension to prepare the hole buffer layer, the mass fraction of PEDOT:PSS in the suspension is 4.5%, Re 2 o 7 The mass fraction of LiF is 2%, the mass fraction of LiF is 1.5%, wherein, the mass ratio of PEDOT and PSS is 5:1, and the rotating speed of spin coating is 4000rpm, and the time is 10s, and spin coating dries, and the hole buffer layer thickness is 30nm; then spin-coat the active layer, the active layer is for...
Embodiment 2
[0058] The structure prepared in this example is IZO / PEDOT:PSS:ReO 2 :CsN 3 / P3HT:PCBM / Cs 2 CO 3 / Au solar cell devices.
[0059] First, IZO is subjected to photolithography treatment, cut into the required size, and then ultrasonicated with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface; after cleaning, clean the conductive substrate Perform oxygen plasma treatment, the treatment time is 5-15min, and the power is 10-50W; Spin coating containing PEDOT:PSS, ReO on the above substrate 2 and CsN 3 The suspension prepared hole buffer layer, the mass fraction of PEDOT:PSS in the suspension is 1%, ReO 2 The mass fraction is 1%, CsN 3 The mass fraction of PEDOT is 0.5%, and the solvent is water, wherein, the mass ratio of PEDOT and PSS is 6:1, and the rotating speed of spin-coating is 500rpm, and the time is 5s, spin-coating dries, and hole buffer layer thickness is 80nm; Then spin Coating the...
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