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Indium sulfide film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide film and preparation method thereof

A technology of solar cells and indium sulfide, applied in the field of solar cells, can solve the problems of incomplete coverage of conductive glass substrates, decreased battery output performance, and poor device performance, and achieves low preparation costs, less raw materials, and enhanced separation with the effect of transmission

Active Publication Date: 2020-10-30
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Problems solved by technology

[0005] Existing preparation In 2 S 3 Thin film methods include chemical bath deposition (CBD), which has high requirements on the ratio of raw materials in the solution, supersaturation concentration, and reaction deposition time. In addition, there are many side reactions that make the prepared In 2 S 3 The purity of the film is not high or there are certain defects, which will promote the recombination of carriers, resulting in a decrease in battery output performance
Preparation of high-quality monodisperse In by hot injection method 2 S 3 Nanocrystals have certain advantages, but the reaction conditions are harsh, the cost is high and it is difficult to realize
The preparation of indium sulfide thin films by chemical vapor deposition generally needs to be carried out in H 2 Heating and preparing under S atmosphere requires a large amount of H 2 S gas, and if H 2 If the S gas is not treated and discharged directly into the air, it will cause serious environmental pollution, and the reaction needs to be carried out at high temperature, which not only consumes a lot of energy, but also the substrate film needs to be resistant to high temperature without being damaged.
The indium sulfide film prepared by the traditional sol-gel + spin coating method is not excellent in device performance. The main reason is that the film has many holes and cannot completely cover the conductive glass substrate, resulting in direct contact between the perovskite film and the substrate. degrades device performance

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  • Indium sulfide film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide film and preparation method thereof
  • Indium sulfide film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide film and preparation method thereof
  • Indium sulfide film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide film and preparation method thereof

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preparation example Construction

[0045] The invention provides a kind of preparation method of indium sulfide thin film, comprises the following steps:

[0046] Mix thioglycolic acid, ethylene glycol methyl ether and a soluble salt of indium, and perform magnetic stirring at room temperature to obtain In 2 S 3 Precursor solution; the In 2 S 3 The temperature of the precursor solution was raised to 80-120°C, and condensed and refluxed to obtain In 2 S 3 sol, then In 2 S 3 The sol is coated on the conductive glass to obtain In 2 S 3 film.

[0047] Preferably, it also includes the use of organic filter membranes to obtain In 2 S 3 The sol is purified by filtration; preferably, the pore size of the organic filter membrane is 0.45 μm.

[0048] Preferably, the time for magnetic stirring is 10-30 min.

[0049] Preferably, during the heating process, the heating rate is 5-15° C. / min; the condensed reflux time is 1.5-2.5 hours.

[0050] Preferably, the soluble salt of indium is indium trichloride; more pr...

Embodiment 1

[0070] A kind of preparation method of indium sulfide film of the present invention, comprises the steps:

[0071] Take 2 mL of thioglycolic acid, 38 mL of ethylene glycol methyl ether and 4 mmol of indium trichloride tetrahydrate (InCl 3 4H 2 O) In a round bottom flask, magnetically stir at room temperature for 10 min to form In 2 S 3 Precursor solution, the In 2 S 3 The temperature of the precursor solution was raised to 100°C, the heating rate was 5°C / min, and kept in the state of condensing and reflux for 2h to obtain In 2 S 3 Sol, filter In with a 0.45 μm organic nylon filter 2 S 3 sol, to obtain purified In 2 S 3 Sol. Take 90 μL of purified In 2 S 3 The sol was drop-coated on the FTO conductive glass, coated at 3000rpm for 30s, and annealed at 300°C for 1h under Ar to obtain an indium sulfide film.

[0072] For income In 2 S 3 The thin film is subjected to XRD test, and the results are as follows: figure 1 shown. Depend on figure 1 It can be seen that t...

Embodiment 2

[0100] The only difference between this embodiment and embodiment 1 is that the preparation of In by spin coating 2 S 3 The spin-coating rotation speed of the thin film was 2000 rpm. By controlling the coating speed to control In 2 S 3 The thickness of the film, the lower the spin coating speed, the thicker the film.

[0101] For the resulting FTO / In 2 S 3 / CsPbBr 3 The cross-section was tested by SEM, the results are as follows Figure 11 shown. Depend on Figure 11 It can be seen that In 2 S 3 Thin film thickness is 240nm, based on In 2 S 3 CsPbBr 3 The performance of perovskite solar cells is tested by J-V, and the test results are as follows: Figure 12 shown. The result is a short circuit current density of 5.86mA / cm 2 , the open circuit voltage is 1.34V, the fill factor is 60%, and the photoelectric conversion efficiency is 4.74%.

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Abstract

The invention discloses an indium sulfide film and a preparation method thereof, and an inorganic perovskite solar cell based on the indium sulfide film and a preparation method thereof. The preparation method of the indium sulfide film comprises the following steps: mixing mercaptoacetic acid, ethylene glycol monomethyl ether and soluble salt of indium, and carrying out stirring to obtain an indium sulfide precursor solution; and carrying out heating to 80-120 DEG C, carrying out condensation reflux to obtain indium sulfide sol, and coating conductive glass with the indium sulfide sol to obtain the compact pinhole-free indium sulfide film. The method has the advantages of low preparation temperature, high production efficiency, controllable film morphology and thickness and the like, theobtained indium sulfide film is good in quality, compact, free of pinholes, high in electron mobility and good in stability, and the solar cell prepared from the indium sulfide film is better in output performance.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to an indium sulfide thin film and a preparation method thereof, an inorganic perovskite solar cell based on the indium sulfide thin film and a preparation method thereof. [0002] technical background [0003] Today, energy transformation and upgrading is the general trend and imminent. All countries are planning in the field of new energy to reduce dependence on fossil energy. Among them, the field of solar photovoltaic power generation is thriving. At present, crystalline silicon solar cells and thin-film solar cells occupy most of the market share, and the emergence of perovskite solar cells is expected to greatly reduce the manufacturing cost of solar cells. In just 10 years, the photoelectric conversion efficiency of organic / inorganic hybrid perovskite solar cells has increased from 3.8% to 25.2%. However, organic / inorganic hybrid perovskite solar cells are extremely sensiti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C03C17/00C03C17/22H01L31/032H01L31/0352H01L31/072H01L31/18
CPCC01G15/00C03C17/002C03C17/22H01L31/072H01L31/18H01L31/03529H01L31/032C01P2006/40C01P2002/72C01P2004/03C03C2217/288Y02E10/50
Inventor 陈建林黄才友邱炜何建军李微彭卓寅任延杰陈荐
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
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