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V2O5-doped hole transport film with adjustable work function, and preparation method and use thereof

A technology of hole transport and V2O5, which is applied in the field of solar cells, can solve problems such as unfavorable industrialization, affecting the service life of devices, and inability to select or adjust, so as to achieve good uniformity and flatness, reduce corrosion, and increase The effect of stability

Inactive Publication Date: 2015-11-18
SUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After spin-coating PEDOT:PSS, because PEDOT:PSS itself is acidic, it is corrosive to the transparent electrode, which greatly affects the service life of the device
However, the preparation of oxide films by sol-gel method is complicated, takes a long time, and the annealing temperature is relatively high.
Its price is relatively expensive, which is not conducive to the realization of its industrialization
In addition, due to the limitations of the above-mentioned preparation conditions, the work function of the thin film material is often the work function of a certain fixed material, which cannot be selected or adjusted according to the energy level of the material used in the device.

Method used

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  • V2O5-doped hole transport film with adjustable work function, and preparation method and use thereof
  • V2O5-doped hole transport film with adjustable work function, and preparation method and use thereof

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Embodiment 1

[0025] (1) Provide an ITO transparent conductive substrate and perform standardized cleaning;

[0026] (2) Configure 0.3g / mL of V 2 o 5 Dissolve the nanoparticle solution in water, heat the solution to 60°C, and let it stand for more than 1 hour after it is completely dissolved; mix it with PEDOT:PSS solution in different proportions according to the volume ratio, and the mixing volume ratio PEDOT:PSS-V 2 o 5 3:1, 4:1, 5:1;

[0027] (3) Place the ITO substrate to be coated in a UV-ozone machine for ozone treatment for 15 minutes, and then use the prepared precursor solution to evenly coat the surface of the substrate by spin coating to form a layer of precursor bulk thin film; the spin-coating steps are: first rotate at a rotating speed of 1000rpm for 10 seconds, then accelerate to rotate at a rotating speed of 4000rpm for 30 seconds, and stand for 60 seconds for later use;

[0028] (4) Place the substrate with the precursor film on the heating plate for annealing. The ann...

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Abstract

The invention belongs to solar cell field and discloses a V2O5-doped hole transport film with an adjustable work function and a preparation method and use thereof. The preparation method is characterized by dissolving metallic oxide V2O5 nanometer particles in a solvent; dissolving the dissolved metallic oxide V2O5 nanometer particles and water-soluble PEDOT:PSS in different proportions; acquiring a film by means of a spin coating, immersion or Czochralski method; and performing treatment by means of an annealing manner to obtain a target product film. The film obtained in the invention is adjustable in thickness variation range, uniform, decreased in corrosion to an electrode, and good in stability. The mutual dissolution of the water-soluble V2O5 nanometer particles and the PEDOT:PSS in different proportions achieves the adjustable work function of the film and energy level characteristic matching of different materials, and is beneficial to carrier injection and transmission. The preparation method is simple and low in cost and almost has no requirement for equipment. The film is good in stability and repeatability.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a hole transport thin film and its preparation method and application, in particular to a V film with adjustable work function. 2 o 5 Doped hole transport thin film and its preparation method and application. Background technique [0002] In semiconductor devices, especially organic semiconductor devices, it is often necessary to modify the transparent electrode by preparing an inorganic metal oxide film or an organic PEDOT:PSS as a hole transport layer, improve the surface roughness of the electrode, and overcome the structural defects on the surface of the transparent electrode. Realize the manufacture of high-efficiency, large-area, and long-life devices. Traditionally, this has been achieved by spin-coating transition metal oxide thin films prepared by PEDOT:PSS or sol-gel methods. After spin-coating PEDOT:PSS, due to the acidity of PEDOT:PSS itself, it has certain corrosion to th...

Claims

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Application Information

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IPC IPC(8): H01L51/00H01L51/42
CPCH10K71/12H10K30/00Y02E10/549
Inventor 廖良生王照奎李萌
Owner SUZHOU UNIV
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