Sodium benzenesulfonate modified PEDOT/PSS film and preparation method and application thereof in solar cells

A technology of solar cells and sodium benzenesulfonate, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of simultaneously increasing the open circuit voltage of perovskite cells, so as to improve photoelectric conversion efficiency and crystallinity Good, the effect of increasing the fill factor

Pending Publication Date: 2020-12-11
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult for additives such as imidazole to simultaneously increase the electrical open circuit voltage, short circuit current, and fill factor of perovskite batteries.

Method used

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  • Sodium benzenesulfonate modified PEDOT/PSS film and preparation method and application thereof in solar cells
  • Sodium benzenesulfonate modified PEDOT/PSS film and preparation method and application thereof in solar cells
  • Sodium benzenesulfonate modified PEDOT/PSS film and preparation method and application thereof in solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Prepare a perovskite solar cell with a thin film of sodium benzenesulfonate modified PEDOT / PSS as a hole transport layer, the specific method is as follows:

[0055] (1) Clean the 15mm×15mm ITO glass with detergent, deionized water, absolute ethanol, acetone and isopropanol for 30 minutes each, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0056] (2) First, add the aqueous solution of sodium benzenesulfonate to the PEDOT / PSS solution (wherein the mass volume ratio of sodium benzenesulfonate to PEDOT / PSS solution is 3:1), stir to make it evenly mixed, and spin-coat Make the thin film of sodium benzene sulfonate modified PEDOT / PSS, adopt 0.45 μ m syringe filter to filter, then it is added dropwise on the ITO after step (1) treatment, spin-coat 40s with the speed of 7000rpm then, finally Annealed at 120°C for 15 minutes to prepare the hole transport layer (referred to as SB-3) of the film of sodium benzenesulfonate modified PEDOT / PSS;

[005...

Embodiment 2

[0061] Prepare a perovskite solar cell with a thin film of sodium benzenesulfonate modified PEDOT / PSS as a hole transport layer, the specific method is as follows:

[0062] (1) Clean the 15mm×15mm ITO glass with detergent, deionized water, absolute ethanol, acetone and isopropanol for 30 minutes each, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0063] (2) First, add the aqueous solution of sodium benzenesulfonate to the PEDOT / PSS solution (the mass volume ratio of sodium benzenesulfonate to PEDOT / PSS solution is 9:1), stir to make it evenly mixed, and spin-coat Make the thin film of sodium benzene sulfonate modified PEDOT / PSS, adopt 0.45 μ m syringe filter to filter, then it is added dropwise on the ITO after step (1) treatment, spin-coat 40s with the speed of 7000rpm then, finally Annealed at 120°C for 15 minutes to prepare the hole transport layer (referred to as SB-9) of the thin film of sodium benzenesulfonate modified PEDOT / PSS;

[0064] ...

Embodiment 3

[0068] Prepare a perovskite solar cell with a thin film of sodium benzenesulfonate modified PEDOT / PSS as a hole transport layer, the specific method is as follows:

[0069] (1) Clean the 15mm×15mm ITO glass with detergent, deionized water, absolute ethanol, acetone and isopropanol for 30 minutes each, then dry it with a nitrogen gun, and then treat it with UV for 30 minutes;

[0070] (2) First, add the aqueous solution of sodium benzenesulfonate to the PEDOT / PSS solution (wherein the mass volume ratio of sodium benzenesulfonate to PEDOT / PSS solution is 15:1), stir to make it evenly mixed, and spin-coat Make the thin film of sodium benzene sulfonate modified PEDOT / PSS, adopt 0.45 μ m syringe filter to filter, then it is added dropwise on the ITO after step (1) treatment, spin-coat 40s with the speed of 7000rpm then, finally Annealed at 120°C for 15 minutes to prepare the hole transport layer (referred to as SB-15) of the thin film of sodium benzenesulfonate modified PEDOT / PSS; ...

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Abstract

The invention relates to a sodium benzenesulfonate modified PEDOT / PSS film and a preparation method and application thereof in solar cells, and belongs to the technical field of solar cell preparation. According to the invention, the sodium benzenesulfonate solution with the concentration of 3-15 mg / mL is added into the PEDOT / PSS solution to obtain the sodium benzenesulfonate modified PEDOT / PSS film, and the sodium benzenesulfonate modified PEDOT / PSS film can improve the corresponding performance of PEDOT / PSS (such as reduction of surface roughness, improvement of electrical conductivity and the like). The modified film can be used as a hole transport layer of a perovskite solar cell, the open-circuit voltage of the perovskite solar cell is increased, the hole transport rate is increased,the defects of the perovskite layer are passivated, the filling factor is increased, the short-circuit current of the perovskite solar cell is increased, and the photoelectric conversion efficiency isimproved.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and in particular relates to a sodium benzenesulfonate modified PEDOT / PSS film, a preparation method thereof and an application in solar cells. Background technique [0002] In order to solve the energy problems faced by human beings, various new solar photovoltaic devices have been developed, such as silicon solar cells, gallium arsenide solar cells, gallium arsenide solar cells, thin film solar cells and emerging solar cells (dye-sensitized solar cells, organic solar cells, quantum dot solar cells, perovskite solar cells). Organic-inorganic hybrid perovskite solar cells have become the next generation due to the excellent properties of perovskite materials (such as direct bandgap, high carrier mobility, ambipolarity, long carrier diffusion length, and high absorption coefficient, etc.) The new development direction of optoelectronic materials. [0003] The commonly used structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L65/00C08L25/18C08K5/42H01L51/42H01L51/46H01L51/48
CPCC08J5/18C08J2365/00C08J2425/18C08K5/42H10K71/12H10K30/40Y02E10/549Y02P70/50
Inventor 臧志刚李蔚王华昕
Owner CHONGQING UNIV
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