33results about How to "Stop overflow" patented technology

The invention discloses an LED (Light Emitting Diode) flip chip structure comprising a substrate, a circuit layer formed on the substrate, and an LED chip located on the circuit layer, wherein the circuit layer comprises a first electrode and a second electrode which are insulated with each other; the LED chip comprises a positive electrode and a negative electrode which are correspondingly connected with the first electrode and the second electrode of the circuit layer respectively; the positive electrode and the negative electrode are connected with the first electrode and the second electrode respectively through solder flip chips; the LED flip chip structure further comprises a barrier structure located between the positive electrode and the negative electrode; and the barrier structure is made of a colloidal insulating material. The invention further relates to a manufacturing method of the LED (Light Emitting Diode) flip chip structure.

This invention relates to one light sensor package structure with gap by use of gap wall position and size to block outside dirty light sensor area and local glue layer overflow range in two glue layers to avoid current technique glue overflow light sensor area and metal ball regeneration. This invention can reduce small sealing area and to improve product rate and quality.

The invention discloses an epitaxial wafer preparation method, an epitaxial wafer and an ultraviolet light-emitting diode. The epitaxial wafer preparation method comprises the following steps: providing a substrate; sequentially laminating a buffer layer and an N-type semiconductor layer on the substrate; sequentially and alternately laminating quantum well layers and quantum barrier layers of a preset period on the N-type semiconductor layer to form a multi-quantum well layer; an electron barrier layer and a P-type semiconductor layer are sequentially stacked on the last quantum barrier layer; wherein a first quantum barrier sub-layer, a second quantum barrier sub-layer, an insertion sub-layer and a third quantum barrier sub-layer are sequentially stacked on the quantum well layer to form a quantum barrier layer, the quantum well layer, the first quantum barrier sub-layer, the second quantum barrier sub-layer and the third quantum barrier sub-layer are all AlGaN layers, the insertion sub-layer is an MgN layer, and the third quantum barrier sub-layer is an AlGaN layer. The Al component content of the first quantum barrier sub-layer and the Al component content of the third quantum barrier sub-layer are both lower than the Al component content of the second quantum barrier sub-layer. By adopting the epitaxial wafer, the problem of low quantum efficiency in the epitaxial wafer in the prior art can be solved.

The invention discloses a GaN-based LED epitaxial structure having an asymmetric super-lattice layer and a preparation method for the same. The GaN-based LED epitaxial structure comprises a substrate, a nitride buffer layer, an N-type GaN layer, a quantum well layer, the asymmetric super-lattice layer and a P-type GaN layer which are sequentially arranged from bottom to top. The asymmetric super-lattice layer is composed of multiple AlxInyGa(1-x-y)N / GaN super-lattice layer units which are sequentially stacked, the total thickness of an AlxInyGa(1-x-y)N layer and a GaN layer in each different period is the same, the thicknesses of the AlxInyGa(1-x-y)N layers gradually decrease as the number of circles changes, and the thicknesses of the GaN layers increase as the number of circles changes. According to the invention, the asymmetric super-lattice layer reduces the limitation on cavity vertical migration and improves the cavity injection efficiency, the AlxInyGa(1-x-y)N layers whose thicknesses progressively change can gradually assist cavities in expanding laterally in a ladder pattern manner, so that the overall luminescence efficiency of an LED device can be improved.

The invention discloses an auxiliary device for soldering pins of printed circuit boards, belonging to the technical field of soldering pins of circuit boards. The lower part of the inner baffle is supported on the upper edge of the pin hole of the circuit board. During the wave soldering process, the tin liquid flows upward through the gap between the pin and the pin hole, and is attached to the upper edge of the pin hole through the inner baffle tube, which can block the tin liquid overflowing upward and ensure the welding quality; and cooperate with the lower end of the outer sleeve It is attached to the surface of the circuit board to effectively prevent the contaminants from spreading and scattering around the surface of the circuit board; and is fastened with the pins through the small mouth end of the outer sleeve to prevent the contaminants from moving up along the pins and prevent the contaminants from entering. Inside the parts, the welding quality and welding safety are guaranteed; the overall structure is simple, the cost is low, the realization is easy, and the practicability is good.

The invention discloses an epitaxial wafer of a GaN-based light emitting diode, and a manufacturing method thereof, and belongs to the technical field of a semiconductor. The epitaxial wafer comprises a substrate, a buffer layer growing on the substrate, an N-type gallium nitride layer, a multi-quantum well layer, a composite layer and a P-type gallium nitride layer. The composite layer comprises multiple periods, the composite layer in each period comprises an insertion layer and an electron barrier layer, from one side of the multi-quantum well layer, the insertion layer and the electron barrier layer are arranged to be successively stacked, and the insertion layer is a zinc oxide layer doped with an Al element. According to the invention, the ZnO insertion layer doped with the Al element becomes an accumulation layer of carriers, the carriers after accumulation are quickly spread in a two-dimensional plane, the antistatic breakdown capability is enhanced, the electron barrier layer can effectively block electron overflow, the mismatch ratio of ZnO and the crystal lattice of a quantum barrier layer employing a GaN layer in the multi-quantum well layer is quite small, the crystal lattice mismatch defect can be effectively avoided, the carrier injection efficiency is improved, and the luminescence efficiency of the light emitting diode is enhanced accordingly.

The invention discloses an externally used traditional Chinese medicine preparation for treating acnes and acne rosacea. The externally used traditional Chinese medicine preparation is mainly preparedfrom the components in parts: 1-75 parts of rheum officinale, 1-50 parts of sulfur, 1-50 parts of hylomecon vernalis and 1-50 parts of Chinese honeylocust fruits through pulverizing and mixing, and the specific amount is adjusted appropriately according to the practical condition of different patients. A preparation method of the externally used traditional Chinese medicine preparation comprisesthe steps that 500g of rheum officinale powder, 200g of sulfur powder, 100g of hylomecon vernalis powder and 200g of Chinese honeylocust fruit powder are fully mixed and sieved through 300-mesh sieve,a mixture is slowly added into 997g of albolene at 60 DEG C, then 3g of p-hydroxybenzoic acid is added into the mixture, adding and stirring are carried out simultaneously until mixing is carried outevenly, and the preparation with the 10% sulfur content is prepared. The externally used traditional Chinese medicine preparation for treating the acnes and the acne rosacea has the good effects of clearing away heat and detoxifying, clearing damp and resolving turbidity, expelling stasis and eliminating stagnation, cooling blood and diminishing swelling, fighting bacterium and diminishing inflammation, killing parasites and relieving itching, resisting sensitivity and controlling oil and removing spots and marks, and has no drug resistance and no toxic and side effects.

The present application provides a light-emitting diode and a preparation method of the light-emitting diode. The AlN layer can increase the energy level and block the overflow of electrons. Magnesium-doped In x al y Ga 1‑x‑y The N layer can ease lattice matching and improve the energy level of the P-type semiconductor layer, which is more conducive to hole injection. The magnesium-doped InGaN layer can increase the hole concentration by increasing the content of magnesium. At this time, through the AlN layer in each sub-semiconductor layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can ensure the lattice quality while improving the effective activation of Mg and increasing the hole concentration. At the same time, through the AlN layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can optimize the energy level, thereby blocking electron overflow while increasing hole concentration. Therefore, by increasing hole concentration while blocking electron overflow, epitaxial yield and luminous efficiency can be improved.

The invention discloses an aeronautical composite material box molding tooling, which includes a left die, a right die and a fastening bolt. The left die and the right die are connected by the fastening bolt to achieve die clamping and fixation. The die clamping surface of the left die and the right die is provided with grooves with corresponding positions and consistent shape at the fastening bolt joints respectively. A detachable silicon rubber ring is placed in the groove cavity formed after die clamping of the corresponding grooves, and the size of the groove cavity is slightly larger than the size of the silicon rubber ring. The grooves can be in the shape of a circle, oval, rectangle, square or any one of other closed figures. The silicon rubber ring and the grooves have a consistent shape. According to the invention, during curing, the silicon rubber ring effectively blocks overspill of the composite material's resin matrix, thus avoiding consolidation of the composite material's resin matrix at the fastening bolt joints. The molded parts can realize convenient demolding, thus avoiding scrapping. The fastening bolt and the silicon rubber ring are easy to clean, the labor cost is reduced, the production efficiency is enhanced, and the quality of subsequent products is ensured.

The invention provides a GaN-based LED epitaxial wafer, an epitaxial growth method and an LED chip. The GaN-based LED epitaxial wafer includes a first low-temperature P-type GaN sub-layer, a second low-temperature P-type GaN sub-layer and a third low-temperature P-type GaN sub-layer stacked in sequence. The GaN sub-layer, the first low-temperature P-type GaN sub-layer and the second low-temperature P-type GaN sub-layer are all AlInGaN layers heavily doped with Mg, and the third low-temperature P-type GaN sub-layer is a GaN layer, wherein the first low-temperature P-type GaN sub-layer is The concentration of the Al composition in the sublayer is greater than the concentration of the Al composition in the second low temperature P-type GaN sublayer, and the third low temperature P-type GaN sublayer passes through the atmosphere by NH 3 / N 2 / H 2 Fade to NH 3 / N 2 , at the same time, the temperature is gradually increased to grow. The invention can effectively solve the problem that in the existing GaN-based LED epitaxial structure, the low-temperature P-type GaN layer is difficult to grow to the bottom along the V-type pit, which leads to the decrease of the LED luminous efficiency.

The invention discloses an optical detection apparatus for preventing light leakage. The optical detection apparatus comprises a light source, an optical detection assembly, a packaging structure and a shading member. A sampling signal is output by the light source to irradiate a to-be-measured object. The optical detection assembly is arranged next to the light source, and keeps a distance with the light source. The optical detection assembly is used for receiving the sampling signal reflected by the to-be-measured object. The packaging structure is used for coating the light source and the optical detection assembly. The packaging structure comprises an out-light surface unit and an in-light surface unit which are respectively arranged on the light source and the optical detection assembly. The packaging structure also comprises a segmentation member which is arranged between the in-light surface unit and the out-light surface unit. The shading member is arranged on the segmentation member for blocking that the sampling signal is projected to the in-light surface unit without reflection by the to-be-measured object.

The invention provides a displayer module which comprises a display panel, a transparency electrode layer, conducting resin, a soldering tin layer and insulating cement. The invention also provides a method for manufacturing the displayer module, and the method comprises: the display panel, coating insulating cement, hardening insulating cement, coating soldering tin layer and coating conducting resin are provided; a shell which is provided with a conductive circuit, a combined display panel and shell, a heat bonding soldering tin layer and the conducting resin are provided. In the invention,the insulating cement is used for preventing the soldering tin and the conducting resin from overflowing. Therefore, the insulating cement of the displayer module of the invention can prevent conductance between an upper base plate and a lower base plate.

The invention discloses an LED packaging structure which comprises a supporting substrate, an LED chip, a gel blocking structure and fluorescent gel. The LED chip is arranged on the supporting substrate and is electrically connected with the supporting substrate, and the LED chip is provided with a substrate and a luminescent layer arranged on the substrate. The gel blocking structure is arrangedon the substrate of the LED chip and is circularly provided with the luminescent layer, and the fluorescent gel is filled into a region formed by the gel blocking structure, the substrate and the luminescent layer.