33results about How to "Stop overflow" patented technology

The invention discloses a GaN-based LED epitaxial structure having an asymmetric super-lattice layer and a preparation method for the same. The GaN-based LED epitaxial structure comprises a substrate, a nitride buffer layer, an N-type GaN layer, a quantum well layer, the asymmetric super-lattice layer and a P-type GaN layer which are sequentially arranged from bottom to top. The asymmetric super-lattice layer is composed of multiple AlxInyGa(1-x-y)N / GaN super-lattice layer units which are sequentially stacked, the total thickness of an AlxInyGa(1-x-y)N layer and a GaN layer in each different period is the same, the thicknesses of the AlxInyGa(1-x-y)N layers gradually decrease as the number of circles changes, and the thicknesses of the GaN layers increase as the number of circles changes. According to the invention, the asymmetric super-lattice layer reduces the limitation on cavity vertical migration and improves the cavity injection efficiency, the AlxInyGa(1-x-y)N layers whose thicknesses progressively change can gradually assist cavities in expanding laterally in a ladder pattern manner, so that the overall luminescence efficiency of an LED device can be improved.

The invention discloses an auxiliary device for soldering pins of printed circuit boards, belonging to the technical field of soldering pins of circuit boards. The lower part of the inner baffle is supported on the upper edge of the pin hole of the circuit board. During the wave soldering process, the tin liquid flows upward through the gap between the pin and the pin hole, and is attached to the upper edge of the pin hole through the inner baffle tube, which can block the tin liquid overflowing upward and ensure the welding quality; and cooperate with the lower end of the outer sleeve It is attached to the surface of the circuit board to effectively prevent the contaminants from spreading and scattering around the surface of the circuit board; and is fastened with the pins through the small mouth end of the outer sleeve to prevent the contaminants from moving up along the pins and prevent the contaminants from entering. Inside the parts, the welding quality and welding safety are guaranteed; the overall structure is simple, the cost is low, the realization is easy, and the practicability is good.

The invention discloses an epitaxial wafer of a GaN-based light emitting diode, and a manufacturing method thereof, and belongs to the technical field of a semiconductor. The epitaxial wafer comprises a substrate, a buffer layer growing on the substrate, an N-type gallium nitride layer, a multi-quantum well layer, a composite layer and a P-type gallium nitride layer. The composite layer comprises multiple periods, the composite layer in each period comprises an insertion layer and an electron barrier layer, from one side of the multi-quantum well layer, the insertion layer and the electron barrier layer are arranged to be successively stacked, and the insertion layer is a zinc oxide layer doped with an Al element. According to the invention, the ZnO insertion layer doped with the Al element becomes an accumulation layer of carriers, the carriers after accumulation are quickly spread in a two-dimensional plane, the antistatic breakdown capability is enhanced, the electron barrier layer can effectively block electron overflow, the mismatch ratio of ZnO and the crystal lattice of a quantum barrier layer employing a GaN layer in the multi-quantum well layer is quite small, the crystal lattice mismatch defect can be effectively avoided, the carrier injection efficiency is improved, and the luminescence efficiency of the light emitting diode is enhanced accordingly.

The present application provides a light-emitting diode and a preparation method of the light-emitting diode. The AlN layer can increase the energy level and block the overflow of electrons. Magnesium-doped In x al y Ga 1‑x‑y The N layer can ease lattice matching and improve the energy level of the P-type semiconductor layer, which is more conducive to hole injection. The magnesium-doped InGaN layer can increase the hole concentration by increasing the content of magnesium. At this time, through the AlN layer in each sub-semiconductor layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can ensure the lattice quality while improving the effective activation of Mg and increasing the hole concentration. At the same time, through the AlN layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can optimize the energy level, thereby blocking electron overflow while increasing hole concentration. Therefore, by increasing hole concentration while blocking electron overflow, epitaxial yield and luminous efficiency can be improved.

The invention provides a GaN-based LED epitaxial wafer, an epitaxial growth method and an LED chip. The GaN-based LED epitaxial wafer includes a first low-temperature P-type GaN sub-layer, a second low-temperature P-type GaN sub-layer and a third low-temperature P-type GaN sub-layer stacked in sequence. The GaN sub-layer, the first low-temperature P-type GaN sub-layer and the second low-temperature P-type GaN sub-layer are all AlInGaN layers heavily doped with Mg, and the third low-temperature P-type GaN sub-layer is a GaN layer, wherein the first low-temperature P-type GaN sub-layer is The concentration of the Al composition in the sublayer is greater than the concentration of the Al composition in the second low temperature P-type GaN sublayer, and the third low temperature P-type GaN sublayer passes through the atmosphere by NH 3 / N 2 / H 2 Fade to NH 3 / N 2 , at the same time, the temperature is gradually increased to grow. The invention can effectively solve the problem that in the existing GaN-based LED epitaxial structure, the low-temperature P-type GaN layer is difficult to grow to the bottom along the V-type pit, which leads to the decrease of the LED luminous efficiency.

The invention discloses an optical detection apparatus for preventing light leakage. The optical detection apparatus comprises a light source, an optical detection assembly, a packaging structure and a shading member. A sampling signal is output by the light source to irradiate a to-be-measured object. The optical detection assembly is arranged next to the light source, and keeps a distance with the light source. The optical detection assembly is used for receiving the sampling signal reflected by the to-be-measured object. The packaging structure is used for coating the light source and the optical detection assembly. The packaging structure comprises an out-light surface unit and an in-light surface unit which are respectively arranged on the light source and the optical detection assembly. The packaging structure also comprises a segmentation member which is arranged between the in-light surface unit and the out-light surface unit. The shading member is arranged on the segmentation member for blocking that the sampling signal is projected to the in-light surface unit without reflection by the to-be-measured object.

The invention provides a displayer module which comprises a display panel, a transparency electrode layer, conducting resin, a soldering tin layer and insulating cement. The invention also provides a method for manufacturing the displayer module, and the method comprises: the display panel, coating insulating cement, hardening insulating cement, coating soldering tin layer and coating conducting resin are provided; a shell which is provided with a conductive circuit, a combined display panel and shell, a heat bonding soldering tin layer and the conducting resin are provided. In the invention,the insulating cement is used for preventing the soldering tin and the conducting resin from overflowing. Therefore, the insulating cement of the displayer module of the invention can prevent conductance between an upper base plate and a lower base plate.

The invention discloses an LED packaging structure which comprises a supporting substrate, an LED chip, a gel blocking structure and fluorescent gel. The LED chip is arranged on the supporting substrate and is electrically connected with the supporting substrate, and the LED chip is provided with a substrate and a luminescent layer arranged on the substrate. The gel blocking structure is arrangedon the substrate of the LED chip and is circularly provided with the luminescent layer, and the fluorescent gel is filled into a region formed by the gel blocking structure, the substrate and the luminescent layer.