Gan-based LED epitaxial structure with asymmetric superlattice layer and method for its preparation

A superlattice layer and epitaxial structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of hindering the ability to activate lateral expansion, adverse luminous efficiency, etc., so as to improve the overall luminous efficiency, improve the injection efficiency, and reduce restrictions. Effect

Active Publication Date: 2017-09-15
FOCUS LIGHTINGS SCI & TECH
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Problems solved by technology

However, it hinders the activation and lateral expansion of holes, which is not conducive to improving the overall luminous efficiency of LEDs.

Method used

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  • Gan-based LED epitaxial structure with asymmetric superlattice layer and method for its preparation
  • Gan-based LED epitaxial structure with asymmetric superlattice layer and method for its preparation

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[0033] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0034] ginseng figure 1 As shown, the present invention discloses a GaN-based LED epitaxial structure with an asymmetric superlattice layer, which includes from bottom to top:

[0035] Substrate 10, the substrate material is usually a sapphire substrate, and can also be other substrate materials, such as Si, SiC, etc.;

[0036] The ni...

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Abstract

The invention discloses a GaN-based LED epitaxial structure having an asymmetric super-lattice layer and a preparation method for the same. The GaN-based LED epitaxial structure comprises a substrate, a nitride buffer layer, an N-type GaN layer, a quantum well layer, the asymmetric super-lattice layer and a P-type GaN layer which are sequentially arranged from bottom to top. The asymmetric super-lattice layer is composed of multiple AlxInyGa(1-x-y)N / GaN super-lattice layer units which are sequentially stacked, the total thickness of an AlxInyGa(1-x-y)N layer and a GaN layer in each different period is the same, the thicknesses of the AlxInyGa(1-x-y)N layers gradually decrease as the number of circles changes, and the thicknesses of the GaN layers increase as the number of circles changes. According to the invention, the asymmetric super-lattice layer reduces the limitation on cavity vertical migration and improves the cavity injection efficiency, the AlxInyGa(1-x-y)N layers whose thicknesses progressively change can gradually assist cavities in expanding laterally in a ladder pattern manner, so that the overall luminescence efficiency of an LED device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a GaN-based LED epitaxial structure with an asymmetric superlattice layer and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component that can emit light. This kind of electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. The use has also been used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] Altho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/0066H01L33/06
Inventor 冯猛刘恒山蔡睿彦陈立人
Owner FOCUS LIGHTINGS SCI & TECH
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