Light-emitting diode and light-emitting diode preparation method

A light-emitting diode, inxalyga1-x-yn technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous efficiency of light-emitting diodes

Active Publication Date: 2020-01-17
ELEC TECH OPTOELECTRONICS TECHWUHUCO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a light-emitting diode with high luminous efficiency and a method for preparing a light-emitting diode to solve the problem of low luminous efficiency of traditional light-emitting diodes.

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  • Light-emitting diode and light-emitting diode preparation method
  • Light-emitting diode and light-emitting diode preparation method
  • Light-emitting diode and light-emitting diode preparation method

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Embodiment Construction

[0026] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail through the following embodiments and in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0027] The serial numbers assigned to components in this document, such as "first", "second", etc., are only used to distinguish the described objects, and do not have any sequence or technical meaning. The "connection" and "connection" mentioned in this application all include direct and indirect connection (connection) unless otherwise specified. In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom"...

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Abstract

The invention provides a light emitting diode and a light emitting diode preparation method. An AlN layer can improve the energy level and block electron overflow. The magnesium-doped InxAlyGa1-x-yN layer can alleviate lattice matching and improve the energy level of the P-type semiconductor layer, thereby facilitating hole injection. According to the magnesium-doped InGaN layer, the hole concentration can be improved by increasing the content of magnesium. At the moment, through the AlN layer, the magnesium-doped InxAlyGa1-x-yN layer and the magnesium-doped InGaN layer in each sub-semiconductor layer, the effective activation of Mg can be improved while the lattice quality is ensured, and the hole concentration is increased. And meanwhile, the energy level can be optimized through the AlNlayer, the magnesium-doped InxAlyGa1-x-yN layer and the magnesium-doped InGaN layer, so that electron overflow is blocked, and meanwhile, the hole concentration is increased. Therefore, the hole concentration is increased while electron overflow is blocked, and the epitaxial yield and the light-emitting efficiency can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a light emitting diode and a method for preparing the light emitting diode. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a kind of electronic component that can emit light. With the advantages of high efficiency, low power consumption, small size, long life, and high reliability, it is a new type of solid-state lighting source with high efficiency, environmental protection, and greenness. It is also the electronic component with the most potential to replace traditional light sources, thus quickly realizing commercial change. At present, GaN-based blue-green light-emitting diodes are more common in the market, and the light-emitting area adopts the InGaN / GaN multiple quantum well structure. Improving the luminous efficiency of the chip and improving the lattice quality of the InGaN / GaN multi-quantum well layer have become th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/14H01L33/12H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/14H01L33/145H01L33/325
Inventor 王晟
Owner ELEC TECH OPTOELECTRONICS TECHWUHUCO
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