Epitaxial wafer of gan-based light-emitting diode and manufacturing method thereof

Abstract

The invention discloses an epitaxial wafer of a GaN-based light emitting diode, and a manufacturing method thereof, and belongs to the technical field of a semiconductor. The epitaxial wafer comprises a substrate, a buffer layer growing on the substrate, an N-type gallium nitride layer, a multi-quantum well layer, a composite layer and a P-type gallium nitride layer. The composite layer comprises multiple periods, the composite layer in each period comprises an insertion layer and an electron barrier layer, from one side of the multi-quantum well layer, the insertion layer and the electron barrier layer are arranged to be successively stacked, and the insertion layer is a zinc oxide layer doped with an Al element. According to the invention, the ZnO insertion layer doped with the Al element becomes an accumulation layer of carriers, the carriers after accumulation are quickly spread in a two-dimensional plane, the antistatic breakdown capability is enhanced, the electron barrier layer can effectively block electron overflow, the mismatch ratio of ZnO and the crystal lattice of a quantum barrier layer employing a GaN layer in the multi-quantum well layer is quite small, the crystal lattice mismatch defect can be effectively avoided, the carrier injection efficiency is improved, and the luminescence efficiency of the light emitting diode is enhanced accordingly.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a GaN-based light-emitting diode and a manufacturing method thereof. Background technique [0002] GaN (gallium nitride) is a typical representative of the third-generation wide-bandgap semiconductor materials. Its excellent high thermal conductivity, high temperature resistance, acid and alkali resistance, and high hardness make it widely used in the production of blue, green, and UV LEDs. GaN-based light emitting diodes generally include an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] An existing GaN-based semiconductor light-emitting epitaxial wafer, which includes a substrate, and an N-type layer, a multiple quantum well layer, an EBL (Electron Blocking Layer, electron blocking layer) and a P-type layer grown on the substrate in sequence, wherein , the multi-quantum well layer is a superlattice structure in which InGa...

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Problems solved by technology

[0005] In EBL, as the Al content increases, the properties of the short-period superlattice structure composed of p-type AlGaN or p-type AlGaN and GaN may reduce the atomic mobility or change the defect state, making the quality of the epitaxial wafer worse, Lattice mismatch and polarization effects are enhanced, which in turn leads to a decrease in the effective barrier height of the EBL and an increase in the possibility of electron overflow, thereby reducing the luminous efficiency of the LED

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