Light-emitting diode and method for manufacturing light-emitting diode

A light-emitting diode, inxalyga1-x-yn technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous efficiency of light-emitting diodes

Active Publication Date: 2021-05-04
ELEC TECH OPTOELECTRONICS TECHWUHUCO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a light-emitting diode with high luminous efficiency and a method for preparing a light-emitting diode to solve the problem of low luminous efficiency of traditional light-emitting diodes.

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  • Light-emitting diode and method for manufacturing light-emitting diode
  • Light-emitting diode and method for manufacturing light-emitting diode

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Embodiment Construction

[0026] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail through the following embodiments and in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.

[0027] The serial numbers assigned to components in this document, such as "first", "second", etc., are only used to distinguish the described objects, and do not have any sequence or technical meaning. The "connection" and "connection" mentioned in this application all include direct and indirect connection (connection) unless otherwise specified. In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom"...

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Abstract

The present application provides a light-emitting diode and a preparation method of the light-emitting diode. The AlN layer can increase the energy level and block the overflow of electrons. Magnesium-doped In x al y Ga 1‑x‑y The N layer can ease lattice matching and improve the energy level of the P-type semiconductor layer, which is more conducive to hole injection. The magnesium-doped InGaN layer can increase the hole concentration by increasing the content of magnesium. At this time, through the AlN layer in each sub-semiconductor layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can ensure the lattice quality while improving the effective activation of Mg and increasing the hole concentration. At the same time, through the AlN layer, magnesium-doped In x al y Ga 1‑x‑y The N layer and the magnesium-doped InGaN layer can optimize the energy level, thereby blocking electron overflow while increasing hole concentration. Therefore, by increasing hole concentration while blocking electron overflow, epitaxial yield and luminous efficiency can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a light emitting diode and a method for preparing the light emitting diode. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a kind of electronic component that can emit light. With the advantages of high efficiency, low power consumption, small size, long life, and high reliability, it is a new type of solid-state lighting source with high efficiency, environmental protection, and greenness. It is also the electronic component with the most potential to replace traditional light sources, thus quickly realizing commercial change. At present, GaN-based blue-green light-emitting diodes are more common in the market, and the light-emitting area adopts the InGaN / GaN multiple quantum well structure. Improving the luminous efficiency of the chip and improving the lattice quality of the InGaN / GaN multi-quantum well layer have become th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/14H01L33/12H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/14H01L33/145H01L33/325
Inventor 王晟
Owner ELEC TECH OPTOELECTRONICS TECHWUHUCO
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