Light emitting diode and preparation method thereof

A technology of light-emitting diodes and light-emitting layers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low electron-hole radiation recombination efficiency and hole injection efficiency, and achieve enhanced radiation recombination efficiency and increased hole concentration , increase the effect of hole injection

Pending Publication Date: 2022-04-12
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the technical problem of low electron-hole radiation recombination efficiency in quantum wells due to low hole injection efficiency in the prior art

Method used

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  • Light emitting diode and preparation method thereof
  • Light emitting diode and preparation method thereof
  • Light emitting diode and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0080] The present invention also provides a method for preparing the light-emitting diode as described above, comprising the following steps:

[0081] growing an N-type semiconductor layer 2, a multi-quantum well light-emitting layer 3 and a P-type semiconductor layer 4 sequentially on the surface of the substrate 1 to obtain the light-emitting diode;

[0082] Wherein, the preparation method of the multi-quantum well light-emitting layer 3 specifically includes: periodically and alternately growing the first quantum well layer 311 and the quantum barrier layer 312 on the surface of the N-type semiconductor layer 2 to obtain the first sub-layer 31; and then growing a second quantum well layer 321 and a superlattice structure barrier layer 322 sequentially on the surface of the first sublayer 31 to obtain a second sublayer 32;

[0083] The superlattice structure barrier layer 322 includes a GaN layer 3221, an AlGaN layer 3222 and a P-type layer 3223 that are periodically and al...

Embodiment 1

[0133] The light emitting diode provided in this embodiment includes: a substrate 1 (sapphire substrate 1 ), and an N-type semiconductor layer 2 , a multi-quantum well light-emitting layer 3 and a P-type semiconductor layer 4 sequentially stacked on the surface of the substrate 1 . Its structure can be found in Figure 4 .

[0134] Among them, such as Figure 5 As shown, the multi-quantum well light-emitting layer 3 includes a first sublayer 31 and a second sublayer 32 sequentially stacked on the surface of the N-type semiconductor layer 2; the first sublayer 31 is included in the N-type semiconductor layer 2 The surface of the type semiconductor layer 2 is a first quantum well layer 311 (InGaN) and a quantum barrier layer 312 (GaN) that are alternately stacked in 5 cycles; the second sublayer 32 is composed of The second quantum well layer 321 (InGaN) and the superlattice structure barrier layer 322 are stacked.

[0135] like Figure 6 As shown, the superlattice barrier l...

Embodiment 2

[0152] The structure of the light emitting diode provided by this embodiment is basically the same as that of Embodiment 1, the difference is:

[0153] First, the superlattice structure barrier layer 322 includes GaN layers 3221, AlGaN layers 3222, and P-type layers 3223 that are alternately stacked in three cycles; wherein, the P-type layers in the first cycle and the second cycle Layer 3223 is an AlGaN layer doped with P-type dopants (AlGaN layer doped with Mg), and the P-type layer 3223 in the third period (ie, the last period, the last barrier layer) is doped with P-type dopant agent GaN layer (GaN layer doped with Mg).

[0154] Second, the alternating cycle of the first sub-layer 31 is 8.

[0155] Third, the GaN layer 3221 in the superlattice structure barrier layer 322 has a thickness of 2.1 nm, the AlGaN layer 3222 has a thickness of 0.5 nm, and the P-type layer 3223 has a thickness of 0.5 nm.

[0156] The preparation method of the light-emitting diode provided in thi...

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Abstract

The invention relates to the technical field of semiconductors, in particular to a light-emitting diode and a preparation method thereof. The light-emitting diode comprises a substrate, an N-type semiconductor layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer, wherein the multi-quantum well light-emitting layer comprises a first sub-layer and a second sub-layer; the first sub-layer comprises a first quantum well layer and a quantum barrier layer; the second sub-layer comprises a second quantum well layer and a superlattice structure barrier layer; the superlattice structure barrier layer comprises a GaN layer, an AlGaN layer and a P-type layer which are periodically, sequentially and alternately stacked; the P-type layer comprises an AlGaN layer doped with a P-type dopant and/or a GaN layer doped with a P-type dopant. The GaN/AlGaN/P-type layer superlattice structure is arranged in the second sub-layer, so that two-dimensional electron gas can be formed, current expansion is improved, electron overflow is blocked, hole injection is increased, and the luminance of the LED is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode and a preparation method thereof. Background technique [0002] A light-emitting diode (light-emitting diode, referred to as LED), is a light-emitting device that releases energy by recombining electrons and holes to emit light, and can efficiently convert electrical energy into light energy. With the development of science and technology, light-emitting diodes are now widely used in technical fields such as displays, lighting, and medical devices. [0003] However, in the light-emitting diodes in the prior art, there are lattice differences between the quantum well and the quantum barrier in the light-emitting layer, which often cause energy band bending, and electrons tend to overflow to the P-type region; on the other hand, the quantum well is hollow. The hole concentration is low, and the hole mobility is low, which will lead to the technical pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
Inventor 刘丽军刘康朱涛展望芦玲
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
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