Preparation method for solar cell with integrated diode
A technology of integrating diodes and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high turn-on voltage of bypass diodes, unreasonable preparation process, edge reverse leakage, etc., and achieve forward voltage drop and optimization quality, the effect of small turn-on voltage
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[0028] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0029] Such as Figure 1-2 Shown, a kind of preparation method of the solar cell with integrated diode comprises the following steps:
[0030] (a) Epitaxial growth of the P-type Ge substrate 201, the steps of which are: sequentially epitaxially growing Ge sub-cells, GaAs sub-cells 204 and GaInP sub-cells 205 on the P-type Ge substrate 201;
[0031] (b) Photoetching for the first time, the steps are: first determine the pattern to be etched of the isolation groove 2-C and the bypass diode 2-B through the photolithography plate and perform photoetching, and then remove the pattern to be etched by wet etching. Etching the GaInP sub-cell 205 and the GaAs sub-cell 204 within the pattern;
[0032] (c) second photolithographic etching, the steps of which are: first determine the pattern to be etched of the isolation groove 2-C through a photolithog...
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