Preparation method for solar cell with integrated diode

A technology of integrating diodes and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high turn-on voltage of bypass diodes, unreasonable preparation process, edge reverse leakage, etc., and achieve forward voltage drop and optimization quality, the effect of small turn-on voltage

Active Publication Date: 2016-04-13
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional integrated bypass diodes are designed with a multi-node structure, which makes the bypass diodes have the disadvantages of high turn-on voltage and large series resistance.
In addition, the traditional integrated bypass diode does not protect its edge junction, so it will cause edge reverse leakage. The main reason is that the traditional preparation process is unreasonable.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for solar cell with integrated diode
  • Preparation method for solar cell with integrated diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] Such as Figure 1-2 Shown, a kind of preparation method of the solar cell with integrated diode comprises the following steps:

[0030] (a) Epitaxial growth of the P-type Ge substrate 201, the steps of which are: sequentially epitaxially growing Ge sub-cells, GaAs sub-cells 204 and GaInP sub-cells 205 on the P-type Ge substrate 201;

[0031] (b) Photoetching for the first time, the steps are: first determine the pattern to be etched of the isolation groove 2-C and the bypass diode 2-B through the photolithography plate and perform photoetching, and then remove the pattern to be etched by wet etching. Etching the GaInP sub-cell 205 and the GaAs sub-cell 204 within the pattern;

[0032] (c) second photolithographic etching, the steps of which are: first determine the pattern to be etched of the isolation groove 2-C through a photolithog...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of a solar cell, and mainly discloses a preparation method for a solar cell with an integrated diode. The preparation method for the solar cell with the integrated diode mainly comprises the following steps of epitaxial growth on a P-type Ge substrate, first photoetching, second photoetching, preparation of an edge protection layer and evaporation of an electrode layer. The preparation method has the advantages that operation is convenient and the quality of a grown sub battery is favorable through a mode of preparing the sub battery by epitaxial growth; two regions of a bypass diode and an isolation groove can be accurately formed by the first photoetching and the second photoetching; the electric leakage of a positive-negative (PN) junction in the bypass diode is avoided by preparing the edge protection layer, and the quality of the PN junction is optimized; and finally, the more uniform electrode layer is prepared by a method of thermal evaporation, the internal resistance is reduced, and the energy loss is reduced. In summary, the preparation method is simple to operate, and moreover, the solar cell provided with the integrated diode of which the positive voltage is reduced and the starting voltage is small can be prepared according to the method.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a method for preparing a solar cell with integrated diodes. Background technique [0002] As clean energy is more and more favored by people, the development speed of solar cells as the first choice for clean energy is also getting faster and faster. Due to the failure of single cells in the working process of solar cells, the solar cells will be damaged due to the hot plate effect of the solar panels of the battery array. In order to prevent this phenomenon, a bypass diode is usually connected in parallel between the positive and negative poles of the single battery, so that it can act as a shunt, thereby avoiding the problematic single battery. [0003] In the preparation process of the bypass diode solar cell, since the integrated bypass diode solar cell can simplify the manufacturing process, the demand for the combination of the solar cell and the bypass diode will bec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/027H01L31/0352H01L31/0687H01L31/0443
CPCH01L21/0274H01L27/1421H01L31/03529H01L31/0687H01L31/1844Y02E10/544Y02P70/50
Inventor 梁存宝杜永超铁剑锐王鑫孙希鹏
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products