Back junction backcontact solar cell
A solar cell and back contact technology, applied in the field of solar cells, can solve problems such as increasing series resistance, increasing carrier recombination rate, and reducing battery performance
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Embodiment 1
[0113] see figure 1 , figure 1 A schematic diagram of the structure of the back-junction and back-contact solar cell provided in Example 1 of the present invention. Among them, 101 is the substrate (substrate), 102 is the tunnel oxide layer, 103 is the N-type doped semiconductor layer, 104 is the P-type doped semiconductor layer, 105 is the positive electrode, 106 is the negative electrode, and 107 is the front electrode. In the field area, 108 is an anti-reflection layer, 109 is a passivation layer on the front surface, and 110 is an overall suede light-trapping structure.
[0114] Depend on figure 1 It can be seen that the P-type doped semiconductor layer and the N-type doped semiconductor layer are alternately distributed in the shape of interpolated fingers, and the P-type doped semiconductor layer and the N-type doped semiconductor layer are separated by a trench, and are insulated from each other. of. Wherein the P-type doped semiconductor layer as the emitter is wid...
Embodiment 2
[0120] see figure 2 , figure 2 A schematic diagram of the structure of the back-junction and back-contact solar cell provided by Example 2 of the present invention. Among them, 101 is the substrate (substrate), 102 is the tunnel oxide layer, 103 is the N-type doped semiconductor layer, 104 is the P-type doped semiconductor layer, 105 is the positive electrode, 106 is the negative electrode, and 107 is the front electrode. In the field area, 108 is an anti-reflection layer, 109 is a passivation layer on the front surface, and 110 is an overall suede light-trapping structure.
[0121] Depend on figure 2 It can be seen that the P-type doped semiconductor layer and the N-type doped semiconductor layer can also be as figure 2 It is shown that they are connected together. Although they are connected together, the P-type doped semiconductor layer and the N-type doped semiconductor layer will form a PN junction. When the battery is working normally, the PN junction is in a reve...
Embodiment 3
[0128] The preparation method of the solar cell is as follows:
[0129] A pyramid-shaped suede structure is prepared by corroding the front surface of an N-type single crystal silicon wafer with a thickness of 100 microns with a sodium hydroxide solution. The concentration of sodium hydroxide is 1%, the etching time is 5 minutes, and the temperature is 60 ℃. On the textured surface, arsenic atoms were implanted by ion implantation to form an N-type doped region on the front surface with a doping concentration of 10 17 cm -3 , the doping depth is 2 microns. After forming the N-type doped region on the front surface, a layer of silicon oxide with a thickness of 20 nanometers is deposited on the front surface as a passivation layer by plasma-enhanced chemical vapor deposition, and then placed on the passivation layer by sputtering A layer of 200nm ITO was deposited as an anti-reflection layer by the way. Then use thermal oxygen oxidation method to form a tunnel oxide layer wi...
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