Solar cell diffusion method and solar cell obtained thereby
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A technology of solar cells and diffusion methods, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increasing recombination and reducing efficiency, and achieves the effects of avoiding heavy doping, increasing built-in electric fields, and avoiding interstitial atoms.
Active Publication Date: 2017-08-25
CSI CELLS CO LTD +1
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But this method has the disadvantage of increasing recombination and reducing efficiency
Method used
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Embodiment
[0048] A solar battery sheet, prepared by the following method:
[0049] Step 1: Getting Started
[0050] Prepare the process, set the temperature in the furnace to 760-790°C, and control the nitrogen flow rate at 10,000-30,000 sccm;
[0051] Step 2: Enter the boat
[0052] The time is controlled at 600-800s, the temperature in the furnace is set at 760-790°C, and the flow rate of continuous nitrogen gas is controlled at 10000-30000sccm;
[0053] Step 3: Heat Up
[0054] The time is controlled at 600-800s, the temperature in the furnace is stabilized at 760-790°C, the flow rate of continuous nitrogen gas is controlled at 10000-30000sccm, and the pressure in the furnace is controlled at 50-200mba;
[0055] Step 4: Low Temperature Diffusion
[0056] The time is controlled at 600-900s, the temperature in the furnace is at 760-790°C, the continuous flow of nitrogen is controlled at 10000-30000sccm, the flow of oxygen is controlled at 1000-2000sccm, and the flow of nitrogen car...
Embodiment 1
[0083] The specific conditions of embodiment 1 are shown in table 1:
[0084] The processing condition of table 1 embodiment 1
[0085]
[0086]
[0087] In Table 1, n is an integer greater than or equal to 0.
[0088] The specific conditions of Comparative Example 1 are shown in Table 1:
[0089] The technological condition of table 1 comparative example 1
[0090]
[0091]
Embodiment 2
[0092] The specific conditions of embodiment 2 are shown in Table 1:
[0093] The process condition of table 2 embodiment 2
[0094]
[0095]
[0096] In Table 1, n is an integer greater than or equal to 0.
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Abstract
The invention relates to a solar cell diffusion method comprising a gradual diffusion step. In the process of element doping, the concentration of doped elements on the surface of silicon gradually varies with time. The volume of doped metal diffused is adjusted to a gradient one, and high-temperature diffusion is carried out at low concentration in the early stage, which can make oxygen precipitation near the surface area fully dissolved (excessive oxygen precipitation is not conducive to impurity removal in an annealing step), and increase the open-circuit voltage of solar cell panels. As the process goes, high-temperature diffusion is carried out at high concentration in the late stage, which can quickly make up for P doping in the surface area and increase effective filling of doped metal. The diffusion method provided by the invention can reduce interstitial atoms formed by sputtering, dislocations, and defects in dead layers.
Description
technical field [0001] The invention belongs to the field of preparation of solar cells, and relates to a method for diffusing solar cells and obtained solar cells. Background technique [0002] Diffuse N-type impurities on the P-type substrate to form a P-N junction to achieve a suitable doping concentration and sheet resistance. In solar cells, the diffusion process in the P-N junction fabrication process has a crucial impact on the performance of the cell, including the reduction of the diffusion dead layer, the reduction of contact resistance loss, the increase of open circuit voltage, the increase of short circuit current and fill factor, all of which are It plays a vital role in obtaining cells with high photoelectric conversion efficiency. [0003] The existing diffusion process includes a two-step diffusion method: the first step is to use a constant surface source to diffuse doping elements on a thinner surface of the substrate; the second step is to perform main d...
Claims
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