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Wash solution for removing laser damage layers

A technology of laser damage and lotion, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., to achieve the effect of increasing opening voltage and reducing leakage current

Active Publication Date: 2011-08-17
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the above-mentioned defects, the technical problem to be solved in the present invention is to provide a cleaning solution for cleaning the damaged layer in view of the problem of the damaged layer in the existing battery silicon wafer

Method used

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  • Wash solution for removing laser damage layers

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Experimental program
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Effect test

Embodiment 1

[0008] Add 80g of ammonium fluoride, 20ml of 49% hydrofluoric acid solution and 20ml of 65% nitric acid solution into 1L of water to make a washing solution for removing the laser damage layer, and use the washing solution to treat single crystal silicon wafers (type P, with a resistivity of 0.5- 3), after alkali texturing (pyramid), diffusion (SHR=70), post-cleaning (removing edge PN junction and backside etching), PECVD, front-side laser doping (ShR=5-10ohm), and removing the damaged layer , Suns-Voc test.

Embodiment 2

[0010] Add 60g of ammonium fluoride, 10ml of 49% hydrofluoric acid solution and 10ml of 68% nitric acid solution into 1L of water to make a washing solution for removing the laser damage layer, and use the washing solution to treat single crystal silicon wafers (type P, with a resistivity of 0.5- 3), after alkali texturing (pyramid), diffusion (SHR=70), post-cleaning (removing edge PN junction and backside etching), PECVD, front-side laser doping (ShR=5-10ohm), and removing the damaged layer , Suns-Voc test.

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Abstract

The invention relates to the manufacture technology of solar batteries, in particular to a wash solution for removing laser damage layers The wash solution comprises water, ammonium fluoride, hydrofluoric acid and nitric acid, wherein the wash solution is prepared by adding 60-80g of ammonium fluoride, 10-20ml of hydrofluoric acid solution and 10-20ml of nitric acid solution into 1L water and mixing the constituents; the wash solution related by the invention can effectively remove the oxides and most of metal elements on the surfaces of silicon slices, can reduce PN (positive and negative) node leakage currents (also called as reverse saturation current or space charge region leakage currents), so that opening voltages are increased.

Description

technical field [0001] The invention relates to solar cell manufacturing technology, in particular to a lotion for removing laser damage. Background technique [0002] At present, SE (Selective Emitter Junction) is widely used in the laboratory to prepare high-efficiency batteries. Its expansion under the grid line of the battery is beneficial to the contact of the positive Ag motor and reduces Rs; at the same time, it is lightly expanded in the active area to reduce the surface recombination. , improved opening pressure and short flow. However, with the traditional SE method, the silicon wafer has to go through many high-temperature processes, and impurities are easily introduced during the high-temperature process, which affects the quality of the silicon wafer and eventually leads to a drop in efficiency; However, the damage layer caused by laser doping has a great influence on the electrical properties of the silicon wafer (research shows that the damage layer area is t...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/306
CPCY02P70/50
Inventor 黄书斌
Owner TRINASOLAR CO LTD
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