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Passivated contact N type back junction solar cell and preparation method thereof

A solar cell, N-type technology, used in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficulty, low short-circuit current of solar cells, and large light absorption coefficient

Inactive Publication Date: 2020-07-31
SPIC XIAN SOLAR POWER CO LTD +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the current passivation contact technologies focus on the passivation contact on the (N+) back side. When the passivation contact technology is used on the front side (P+), the short-circuit current of the solar cell is low due to the high light absorption coefficient of polysilicon, and passivation is applied on the front side. Access to technology is difficult

Method used

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  • Passivated contact N type back junction solar cell and preparation method thereof
  • Passivated contact N type back junction solar cell and preparation method thereof
  • Passivated contact N type back junction solar cell and preparation method thereof

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Embodiment Construction

[0034] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0035] according to Figure 1 to Figure 9 As shown, the N-type back-junction solar cell with passivation contact provided by the present invention includes an N-type crystalline silicon wafer 10, and the front surface of the N-type crystalline silicon wafer 10 is sequentially provided with N+ front surface field doped regions 20 from inside to outside. , front surface passivation anti-reflection layer 30 and metal contact electrode 40, the back surface of N-type crystalline silicon chip 10 is provided with tunnel oxide layer 50, P+ doped polysilicon region 60, back surface passivation anti-reflection Layer 70 and metal contact electrode 80; tunnel oxide layer 50, P+ doped polysilicon region 60 and back surface passivation anti-reflection layer 7...

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Abstract

The invention aims to disclose a passivated contact N type back junction solar cell and a preparation method thereof. The passivated contact N type back junction solar cell comprises an N type crystalsilicon wafer, wherein an N + front surface field doped region, a front surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the front surface of the Ntype crystal silicon wafer from inside to outside, and a tunneling oxide layer, a P + doped polycrystalline silicon region, a back surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the back surface of the N type crystal silicon wafer from inside to outside. Compared with the prior art, the passivated contact N type back junction solar cell of the invention has the following characteristics that P + doped polycrystalline silicon is applied to the back surface of the N type cell and is used for passivating an emitter junction and a metal contactregion, carrier enters the doped P type polycrystalline silicon layer through the tunneling oxide layer to achieve selective transmission and collection, surface recombination, especially metal contact area recombination, of an emitter junction is greatly reduced by means of the excellent passivation performance of polycrystalline silicon, the open-circuit voltage and efficiency of the cell are improved, and the purpose of the invention is achieved.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to an N-type back-junction solar cell with a passivation contact and a preparation method thereof. Background technique [0002] Compared with P-type silicon, N-type silicon has a higher minority carrier lifetime and no light-induced attenuation effect, which has gradually become the focus of research structures and photovoltaic companies. At present, the common N-type structure is that the front is a P+ emitter junction, the substrate is an N-type silicon, and the back is an N+ back surface field. Generally, the P+ diffusion layer adopts the stacked structure of SiO2 / Al2O3 / SiNx, and the N+ back surface field adopts the stacked structure of SiO2 / SiNx as the passivation layer, and then uses the burn-through paste to form an ohmic contact with the substrate. The metallization based on the fire-through paste technology will destroy the passivation film under the metal, ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0216
CPCH01L31/02168H01L31/0682H01L31/1804Y02E10/546Y02E10/547Y02P70/50
Inventor 刘大伟宋志成
Owner SPIC XIAN SOLAR POWER CO LTD
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