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61results about How to "Easy to excite" patented technology

Plant active component extraction device and application thereof in cosmetics

The invention discloses a plant active component extraction device and application thereof in cosmetics. The device comprises a base, a distillation mechanism, an extrusion mechanism, a condensation mechanism, a crushing mechanism and a water circulation mechanism, and the front sides and the rear sides of the condensation mechanism and the crushing mechanism are fixedly connected with the top ofthe distillation mechanism through a rack, the distillation mechanism comprises a distillation box fixed to the front side of the top of the base, and a heating plate is fixedly connected to the bottom of the inner surface of the distillation box. The invention relates to the technical field of distillation equipment. The invention discloses the plant active component extraction device and application thereof in cosmetics. The extrusion mechanism is arranged on the distillation box, juice in plants is fully squeezed out through an extrusion force, then distillation is conducted through the distillation mechanism, compared with direct plant cooking, active substances in the plants can be extracted more fully and thoroughly, waste is little, cost is reduced, the extrusion mechanism is of a movable design, the extrusion mechanism can be directly pulled out upwards, internal residue can be poured out conveniently, and use is convenient.
Owner:陈广建

Silver ion doped zinc thioindate heterojunction photocatalyst preparation method

The invention discloses a silver ion doped zinc thioindate heterojunction photocatalyst preparation method, and relates to a catalyst preparation method, which comprises: carrying out a reaction on silver nitrate, zinc acetate, indium acetate, thioacetamide and indium oxide according to a certain ratio under an oil bath heating condition to obtain a target photocatalyst. According to the invention, the novel visible light photocatalyst is clear in structure and definite in composition; by doping with Ag<+>, the photon utilization rate of ZnIn2S4 can be remarkably increased; by compounding withIn2O3, the diffusion range of photon-generated carriers can be enlarged, the electron-hole pair is effectively separated, the recombination of photo-induced electron-hole pairs is inhibited, and theutilization rate of photo-induced electrons is greatly increased, so that the catalytic activity of visible light is enhanced; and the Ag:ZnIn2S4/In2O3 composite material has high visible light activity, good hydrogen production capacity and good photocatalytic stability, so that the Ag:ZnIn2S4/In2O3 composite material has wide prospect in the field of clean energy production and energy conversion, and is a catalyst with good development prospect.
Owner:SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY

Multi-finger gate structure-based terahertz radiation source device and regulation and control method thereof

The invention discloses a multi-finger gate structure-based terahertz radiation source device and a regulation and control method thereof. The terahertz radiation source device comprises a channel layer, a channel providing layer, a source and a drain; a two-dimensional electron gas (2DEG) channel is generated inductively in the channel layer; two groups of gates are alternately arranged on the channel providing layer; when different voltages are respectively applied to the two groups of gates, the concentration of 2DEG in channel regions located below the two groups of gates and the concentration of 2DEG in channel regions located right below areas between any two adjacent gates are different; 2DEG concentration difference interfaces are formed between the channel regions; and if a voltage is loaded between the source and the drain, a standing wave oscillation structure with periodic concentration difference is constructed in the channel; and therefore, terahertz radiation is generated. The terahertz radiation source device has the advantages of easiness in excitation, high power, modulatability, convenience in miniaturization, light weight, easiness in integration and the like. The radiation frequency of the terahertz radiation source device can be adjusted within the range of 0.3THz-1.9THz. The terahertz radiation source device is suitable for being widely applied to multiple fields.
Owner:HANGZHOU DIANZI UNIV FUYANG ELECTRONIC INFORMATION RES INST CO LTD

Method and device for detection of femtosecond plasma breakdown ionization spectrum

The invention relates to the technical field of element detection, in particular to a method and device for detection of a femtosecond plasma breakdown ionization spectrum. The method for the detection of the femtosecond plasma breakdown ionization spectrum comprises the following steps: (1) putting a to-be-detected sample into a graphite heating device, introducing a current to produce high temperature for enabling the to-be-detected sample to be particlized, and injecting a particlized to-be-detected sample gas into a sample chamber; (2) focusing transmitted femtosecond pulse lasers into plasma, and enabling the plasma to act on the to-be-detected sample gas in the sample chamber and performing excitation, thus a plasma fluorescence spectrum is formed; and (3) acquiring the plasma fluorescence spectrum and performing detection by adopting a spectrum collection detection module. The method provided by the invention performs simple treatment on substances by adopting the graphite heating device, thus particlization efficiency is high; temperature of the substances is high after being subjected to pretreatment, thereby being more beneficial to follow-up excitation detection, and matrix effect is greatly overcome; and the problem that a background signal is high when the traditional nanosecond LIBS system detects an initial stage of plasma evolution is solved.
Owner:GUANGDONG ROI OPTOELECTRONICS TECH CO LTD +2

Waveguide antenna assembly and system with mode barrier filter for electronic devices

A waveguide antenna assembly conformable to the configuration of a supported device for transceiving signals of a predetermined radio frequency range comprising at least two collaterally aligned conductive layers configured in a conformable loop so as to form an electrically isolating channel dimensionally configured for support of the waveguide modes of the predetermined frequency range, an aperture for electromagnetically transceiving the signals, wherein the aperture extends along a surface of the electrically isolating channel such that the aperture extends between the outer edge of the inner surface of the first conductive layer and the second conductive layer, a back short spaced apart from the aperture a predetermined distance equal to a resonant length of the waveguide mode wavelength so as to provide a circuit impedance between the first conductive layer and the second conductive layer for tuning the waveguide to transceive the signals, excitation points coupled to the aperture to propagate waveguide modes within the electrically isolating channel for transceiving signals, and mode barrier filters longitudinally oriented in the first conductive layer and the second conductive layer to impede coupling between excitation points. A preferred embodiment of the present waveguide antenna strategically orients the mode barrier filters to enhance antenna transceiving and can be used to support switched TEM and H11 waveguide modes.
Owner:POULSON KIM

Uncooled infrared detector device and manufacturing method thereof

The invention provides an uncooled infrared detector device and a manufacturing method thereof. The uncooled infrared detector device comprises a substrate and a SiGe layer arranged on the substrate, wherein the substrate comprises an insulating layer, and the SiGe layer comprises a P-type area and an N-type area which are adjacent to each other. Correspondingly, the invention further provides another uncooled infrared detector device which comprises an SOI (Silicon on Insulator) substrate and a P-type SiGe layer, wherein the SOI substrate has an N-type top silicon layer; the P-type SiGe layer is arranged on the N-type top silicon layer; and the P-type SiGe layer is selectively epitaxial grown. In the uncooled infrared detector device, the P-type area of a diode is made of a SiGe material, thereby forming a SiGe PN junction diode or SiGe / Si heterojunction diode so as to reduce a working voltage. A forbidden bandwidth of the SiGe material changes within a range of 0.66-1.12eV following the change of Ge components. Relative to a monocrystalline silicon diode, the forbidden bandwidth of the SiGe material is narrower, thereby being easier to stimulate the forming of the PN junction diode and promoting a voltage temperature response coefficient.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Glass coating suspension deep undercooling fast directional solidification device and solidification method thereof

The invention discloses a glass coating suspension deep undercooling fast directional solidification device and a solidification method thereof. The solidification device comprises a closed furnace body. A glass pipe, a glass pipe clamp, a ball screw, an induction heater, a thermal insulation mold shell and a water cooling copper mold are arranged in the closed furnace body. The glass pipe in the closed furnace body is placed on the clamp. The clamp is driven by the ball screw. The glass pipe is filled with alloy raw materials. The closed end of the glass pipe is located in the inner axial position of the heater. After installation, the closed furnace body is vacuumized and is filled with argon. A power source of the heater is started for heating, thus the alloy raw materials are subjected to suspension melting, an alloy melt is purified, heating is continued, and thus the alloy melt is overheated. The electric current of the heater is lowered, and a deep undercooling alloy melt is obtained. Under the action of the gravity, the deep undercooling alloy melt enters a mold cavity formed by the water cooling copper mold and the thermal insulation mold shell. Fast one-way growth of a block sample is achieved. In the operation process of the solidification method, expensive Ga-In-Sn liquid alloy is not used, thus production cost is low, and operation is simple and convenient.
Owner:ZHENGZHOU UNIV
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