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28 results about "Euhedral and anhedral" patented technology

Euhedral crystals (also known as idiomorphic or automorphic crystals) are those that are well-formed, with sharp, easily recognised faces. The opposite is anhedral (also known as xenomorphic or allotriomorphic): a rock with an anhedral texture is composed of mineral grains that have no well-formed crystal faces or cross-section shape in thin section. Anhedral crystal growth occurs in a competitive environment with no free space for the formation of crystal faces. An intermediate texture with some crystal face-formation is termed subhedral.

Crystal processing method

The invention provides a crystal processing method which is used for processing equipment to cut a crystal, the processing equipment comprises a cutting tool and a bearing film, the method comprises the following steps: the crystal has a front surface and a back surface which are oppositely arranged, the front surface of the crystal is provided with a first protective layer bonded by wax, and the back surface of the crystal is provided with a second protective layer bonded by wax; forming a cut unit; the cut unit is bonded to the bearing film, and the bearing film is located on the back face of the cut unit; placing the bearing film adhered with the cut unit on processing equipment, and controlling a cutting tool to cut the cut unit to form cut particles; and taking down the bearing film and the protective layer on the cut particles to form crystal particles. The protective layers bonded by wax are arranged on the two surfaces of the crystal, so that the fracture resistance of the crystal in the cutting process can be remarkably enhanced, and edge collapse, fragmentation or internal micro-cracks generated in the cutting process of the crystal are greatly reduced, thereby directly improving the processing yield of crystal particles.
Owner:SHENYANG HEYAN TECH CO LTD

Method for manufacturing a composite structure including a monocrystalline thin layer transferred onto a carrier substrate

The invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline material arranged on a carrier substrate made of polycrystalline material, the manufacturing method comprising the following steps: a) providing a raw disk made of polycrystalline material having two faces; b) measuring at least one curvature parameter of the raw disk so as to define a first face with a convex profile and a second face with a concave profile, and selecting the first face to correspond to a front face of the carrier substrate at the end of step c); c) preparing the carrier substrate from the raw disk, involving mechanical and / or chemical treatment of the faces of the raw disk, the carrier substrate having a front face and a rear face corresponding to the first face and the second face of the raw disk, respectively; d) transferring the thin layer onto the front face of the carrier substrate in order to obtain the composite structure.
Owner:SOITEC SA

Silicon carbide-based composite structure having good vertical electrical conduction

The invention relates to a composite structure having a front face and a rear face extending parallel to a main plane, which structure comprises: - a useful layer of single-crystal silicon carbide, a free face of which constitutes the front face, which layer has a first concentration of N-type dopants; - a carrier substrate made of polycrystalline silicon carbide, a free face of which constitutes the rear face, which substrate has a second concentration of N-type dopants, the second concentration being higher than the first concentration; - an intermediate region extending along the main plane and including an interface zone between an assembled face of the useful layer and an assembled face of the carrier substrate; the composite structure being characterised in that the intermediate region comprises inclusions of single-crystal silicon carbide in direct contact with the useful layer and extending, in a direction normal to the main plane, between grains of the carrier substrate, the inclusions having a third concentration of N-type dopants which is between the first concentration and the second concentration. The invention also relates to a method for producing such a composite structure.
Owner:SOITEC SA +1

Method for producing component, in particular trim panel, of motor vehicle

The invention relates to a method for producing a component (1) of a motor vehicle, comprising four steps a) to d). In a first step a), a substrate (2) made of a metal substrate material is provided, which substrate has a front side (3) as a viewing side and a rear side (4) opposite the front side (3), and has a predetermined substrate thickness (d). According to a second step b), the substrate material in the region of the at least one first substrate section (6a) is removed at least from the front side (3), preferably from both the front side (3) and the rear side (4) of the substrate (2) by an etching process, such that, after the removal, at least one through-hole (5) is formed in the substrate (2) which extends from the front side (3) to the rear side (4), and, after the removal, at least one through-hole (6) is formed in the substrate (2) which extends from the front side (3) to the rear side (4). The substrate thickness (d) of the substrate (2) in the at least one first substrate section (6a) is reduced compared to the at least one second substrate section (6b) from which the substrate material is not removed. In a third step c), a color layer (8) is applied on the front side of the substrate (2), the color of which is different from the color of the front side (3) of the substrate (2) before the application of the color layer (8), and then the color layer is removed from the at least one second substrate section (6b). In a fourth step d), a light active element (10) is mounted on at least a partial region of the substrate rear surface (4) such that the light active element (10) covers the at least one through-hole (5).
Owner:MERCEDES BENZ GRP

Overlay alignment mark and formation method thereof, and overlay error measurement method and device

The embodiment of the invention provides an overlay alignment mark and a forming method thereof, and an overlay error measuring method and device.The overlay alignment mark comprises a zero-layer mark located on the back face of a substrate; the current layer mark is located on the front face side of the substrate, and the front face and the back face of the substrate are oppositely arranged; wherein, from the back surface to the front surface, the current layer mark is located right above the zero layer mark. By adopting the technical scheme, the flatness of the front surface of the substrate can be improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP

X-ray monochromator device and method of adjusting an x-ray monochromator device

PendingCN122330960AHigh energyMonochromator
This invention relates to the field of synchrotron radiation optical elements and discloses an X-ray monochromator device and an adjustment method for the X-ray monochromator device. The device includes: a base assembly; a spectroscopic crystal assembly, including a single-crystal crystal plate and two flexible connectors, the single-crystal crystal plate having a front and a back, the front being configured to face the X-ray incident direction, and the two flexible connectors symmetrically arranged on one side of the back of the single-crystal crystal plate and connecting the single-crystal crystal plate and the base assembly; a deformation detection element, which monitors the curvature change of the single-crystal crystal plate in real time and generates a feedback signal; and a loading mechanism, including at least two force-applying parts, at least two force-applying parts disposed between the two flexible connectors, at least two force-applying parts acting on the back, and the loading mechanism being able to control the at least two force-applying parts to act on the single-crystal crystal plate according to the feedback signal. This invention operates entirely at room temperature, and can achieve continuously adjustable curvature of the single-crystal crystal plate, no thermally induced lattice damage, and high energy resolution.
Owner:ANHUI ABSORPTION SPECTROMETER EQUIP CO LTD

An in-situ testing system

This application provides an in-situ testing system, comprising: a light source including a Raman laser emitter, a heated laser emitter, and an X-ray emitter; an emission optical path for directing a first Raman test beam and a first heated test beam to a first position on the front side of the sample, and directing a second Raman test beam and a second heated test beam to a second position on the back side of the sample; the sample being located within a diamond anvil cell; a receiving optical path for directing a first Raman reflected beam, a first heated reflected beam, a second Raman reflected beam, and a second heated reflected beam to a spectrometer; a spectrometer for determining the pressure and temperature parameters of the front and back sides of the sample; and a detection device for receiving diffraction signals and determining the lattice parameters of the sample based on the diffraction signals. This in-situ testing system integrates Raman testing, heated laser testing, and X-ray testing into one unit, enabling the acquisition of pressure, temperature, and lattice parameters on both sides of the same sample location.
Owner:SHENZHEN ADVANCED LIGHT SOURCE RESEARCH INSTITUTE (HIGH-END SCIENTIFIC INSTRUMENT SHENZHEN BRANCH OF THE UNIVERSITY REGIONAL TECHNOLOGY TRANSFER & TRANSFORMATION CENTER)

Gasket, method for manufacturing gasket, and method for using gasket

PCT designated stageWO2025220203A1Engine sealsFlanged jointsEuhedral and anhedralSi substrate
The present invention provides: a gasket having a longer life compared to conventional gaskets; a manufacturing method for said gasket; and a method for using said gasket. [Solution] A gasket 100 includes a sheet-shaped base material 10 (sheet-shaped base material). The thickness of the base material 10 is in the Z direction. In a front view, the contour of the base material 10 is circular, and a through-hole 10X extending in the Z direction is formed in a central part of the base material 10. The through-hole 10X is formed in a circular shape in both of the front surface 11 of the base material 10 and the rear surface 12 of the base material 10. A side surface notch 13S is formed in an outer surface 13 of the base material 10. Further, the side surface notch 13S extends toward an axis AX serving as the center of the through-hole 10X, as shown in fig. 3(C) and fig. 4, and a tip part 13ST of the side surface notch 13S is positioned in a middle part between the outer surface 13 and a wall surface 14.
Owner:HAYASHI MASATAKA +1

Electrode structure, piezoelectric vibration piece, piezoelectric device, intermediate body wafer for manufacturing piezoelectric device

To provide a piezoelectric vibration piece 10 having an excitation electrode 13 formed of a crystal piece 11, a cobalt film 13a as an underlying layer provided in the front surface and the back surface of the crystal piece 11, and a metal film 13b laminated on the cobalt film, the specific resistance and the stress of the excitation electrode 13 in the piezoelectric vibration piece 10 being improved than in an existing piezoelectric vibration piece.SOLUTION: The cobalt film has a thickness in the range from 0.5 nm to 5 nm, both inclusive, preferably has a thickness in the range from 0.5 nm to 3 nm, both inclusive, and more preferably has a thickness in the range from 0.5 nm to 1 nm, both inclusive. The metal film has a thickness in the range from 10 nm to 100 nm, both inclusive, and preferably has a thickness in the range from 10 nm to 60 nm, both inclusive. A crystal piece 11 has an AT-cut crystal piece.SELECTED DRAWING: Figure 1
Owner:NIHON DEMPA KOGYO CO LTD

Carrier substrate for soi structure and associated production method

The invention relates to a carrier substrate (10) made of monocrystalline silicon, the carrier substrate (10) having a front face (10a) and a back face (10b) and comprising: - a surface area (1) extending from the front face (10a) to a depth of between 800 nm and 2 microns and having less than 10 crystal originated particles (COP) detected by surface inspection based on dark field reflection microscopy, - an upper area (2) extending from the front face (10a) to a depth of between several microns and 40 microns and having an interstitial oxygen (Oi) content lower than or equal to 7.5E17 Oi / cm 3 and a resistivity higher than 500 ohm.cm, and - a lower area (3) extending between the upper area (2) and the back face (10b) and having a density of microdefects (BMD) higher than or equal to 1E8 / cm 3 The invention also relates to a method for manufacturing such a carrier substrate (10).
Owner:SOITEC SA

Method of manufacturing a composite structure including a rating step

The invention relates to a method of manufacturing a composite structure comprising a thin film made of single-crystal silicon carbide, arranged on a carrier substrate made of polycrystalline silicon carbide, comprising the following steps: 1) providing at least one donor substrate made of single-crystal silicon carbide, said donor substrate having a front face and a back face, said front face potentially having defects, called primary defects; 2) checking the quality of said at least one donor substrate using a photoluminescence-like imaging technique to extract a map of the front face, called a first map, listing the primary defects, said primary defects being identified as micro-hole type, complex star stack defect type or point defect type; 3) transferring a thin film obtained from a surface layer of said at least one donor substrate onto a carrier substrate made of polycrystalline silicon carbide to obtain a composite structure and a remaining donor substrate; 4) checking the free surface of the thin film of the composite structure by means of a defect checking technique using ultraviolet laser beam scattering to extract a map of the free surface, called a second map, listing the defects, called secondary defects; 5) rating said composite structure, which comprises comparing said first map and said second map.
Owner:SOITEC SA

Electrode structure, piezoelectric vibration piece, piezoelectric device, intermediate body wafer for manufacturing piezoelectric device

To provide a piezoelectric vibration piece 10 having an excitation electrode 13 formed of a crystal piece 11, a tungsten film 13a as an underlying layer provided in the front surface and the back surface of the crystal piece 11, and a metal film 13b laminated on the cobalt film, the specific resistance and the stress of the excitation electrode 13 being improved than in an existing piezoelectric vibration piece.SOLUTION: A tungsten film has a thickness in the range from 0.5 nm to 5 nm, both inclusive, preferably has a thickness in the range from 0.5 nm to 3 nm, both inclusive, and more preferably has a thickness in the range from 0.5 nm to 1 nm, both inclusive. The metal film has a thickness in the range from 10 nm to 100 nm, both inclusive, and preferably has a thickness in the range from 10 nm to 60 nm, both inclusive. A crystal piece 11 has an AT-cut crystal piece.SELECTED DRAWING: Figure 1
Owner:NIHON DEMPA KOGYO CO LTD

Automatic seed crystal stabilizing device of single crystal furnace

The utility model discloses an automatic seed crystal stabilizing device of a single crystal furnace, which relates to the field of czochralski single crystal and comprises a moving device, a mounting seat is rotatably connected to the center of the moving device, a positioning device is fixedly connected to the center of the top of the mounting seat, and positioning components are symmetrically and movably connected to the front side and the back side of an inner cavity of the positioning device. Supporting pads are movably connected to the bottoms of inner cavities of the positioning devices, and linear motors are electrically connected to the left sides of the moving devices. According to the automatic seed crystal stabilizing device of the single crystal furnace, the seed crystal can be stabilized in the process of straight pulling of the single crystal, so that the process of stabilizing the seed crystal is automatically carried out, the automatic stabilization of the seed crystal is realized, the labor intensity is reduced, the production efficiency is improved, the seed crystal can be automatically stabilized by adopting the automatic seed crystal stabilizing device, and the production efficiency is improved. The automatic stabilizing process of the seed crystal can be carried out in the process of turning back of the auxiliary chamber and replacing air in the auxiliary chamber with argon, so that the ineffective working time can be shortened, and the purpose of improving the output can be achieved.
Owner:HONGYUAN NEW MATERIAL BAOTOU CO LTD +1

Magnetostrictive member and method for manufacturing magnetostrictive member

[Problem] To provide a magnetostrictive member which uses a stable index that can be easily evaluated and is unaffected by the size and thickness of the magnetostrictive member in a device characteristic when a magnetostrictive vibration power generation device is manufactured, which produces a high device characteristic, and which suppresses variations in optimum magnetic field strength, and to provide a method for manufacturing the magnetostrictive member. [Solution] A plurality of magnetostrictive members are obtained from the same crystal. The magnetostrictive member comprises a crystal of an iron-based alloy having a magnetostrictive characteristic, and is a plate-shaped body having a longitudinal direction and a lateral direction. At least one surface of the front surface and the back surface of the plate-shaped body has a plurality of grooves extending in the longitudinal direction. The plurality of magnetostrictive members have, as the optimum magnetic field strength, magnetic field strength when a half-value frequency coupling coefficient (= kf1f2) obtained by electromechanical equivalent circuit analysis becomes maximum, and the ratio (standard deviation / average value) between the standard deviation of the optimum magnetic field strength and the average value of the optimum magnetic field strength is 0.2 or less.
Owner:SUMITOMO METAL MINING CO LTD

Color plate-like component with structured cover and color filter layer

The invention relates to a plate-like component (1) comprising a transparent cover plate (2) and a planar back element (3) attached to the cover plate (2), wherein the cover plate (2) has a front side (4) facing the external environment and a back side (5) facing the back element (3), wherein at least one surface (4, 5) selected from the front side and the back side has at least one structured area (8, 8'), and wherein at least one color filter layer (9, 9') for reflecting light in a predetermined wavelength range is arranged on at least one surface (4, 5) selected from the front side and the back side, wherein the at least one structured area (8, 8') has the following features (i) to (iii): (i) perpendicular to the plane of the cover plate (2), the height profile comprises peaks and valleys, the average height difference between the peaks and valleys being at least 2 μm, (ii) at least 50% of the structured areas are composed of relatively A composition of segments inclined relative to the plane of the cover plate (2), wherein at least 20% of the segments have an inclination angle in the range of more than 0° to a maximum of 15° and at least 30% of the segments have an inclination angle in the range of more than 15° to a maximum of 45° relative to the plane of the cover plate (2), wherein (iii) each segment is planar and has a segment area of ​​at least 1 μm2, the average roughness of each segment is less than 15% of the layer thickness of at least one color filter layer (9, 9'), and wherein at least one color filter layer (9, 9') contains at least one high-refractive index layer, the at least one refractive index layer having a refractive index greater than 2.5 in the wavelength range of 400 nm to at least 700 nm and an extinction coefficient of at least 0.2 below 450 nm and less than 0.2 (in particular less than 0.1) above 700 nm.
Owner:CNBM RESEARCH INSTITUTE FOR ADVANCED GLASS MATERIALS GROUP CO LTD

switching device

ActiveDE112018002892B4Contact engagementsElectrical connectionEuhedral and anhedral
A switching device comprising: a substrate (1) having a front side and a back side; a slider (2) that slides in a predetermined sliding direction while contacting at least three points on a front side of the substrate (1); a first pattern (p1), a second pattern (p2), and a third pattern (p3) formed in a first region on the front side of the substrate (1) and which the slider (2) can contact simultaneously; a fourth pattern (p4), a fifth pattern (p5), and a sixth pattern (p6) formed in a second region on the front side of the substrate (1) and which the slider (2) can contact simultaneously; a seventh pattern (p7), an eighth pattern (p8), and a ninth pattern (p9) formed in a third region on the front side of the substrate (1) and which the slider (2) can contact simultaneously;anda position detection unit (3) that detects a position of the slider (2) based on a combination of a signal from the first pattern (p1) to a signal from the ninth pattern (p9),wherein the first pattern (p1), the fourth pattern (p4), and the seventh pattern (p7) are connected, the second pattern (p2) and the ninth pattern (p9) are intermittently formed on the front side of the substrate (1) and electrically connected to each other on the back side of the substrate (1) or outside the substrate, the third pattern (p3) and the sixth pattern (p6) are connected, and the fifth pattern (p5) and the eighth pattern (p8) are connected.;
Owner:ALPS ALPINE CO LTD

Ground diffuse reflection light supplementing method and system for flat single-axis tracker

The application provides a ground diffuse reflection light supplementing and efficiency increasing method and system for a flat single-axis tracker, the method comprising: laying a reflecting material on the ground between the front and rear rows of trackers for supplementing light to the front and back surfaces of a bifacial photovoltaic module on the tracker; calculating real-time power generation of the tracker at any time T and annual total power generation; finding a target correction amount of a tracking rotation angle of the tracker at the time T for keeping the real-time power generation of the tracker at the time T maximum, and a target arrangement parameter of the reflecting material for maximizing the annual total power generation of the tracker; correcting the tracking rotation angle of the tracker according to the target correction amount at each time, and laying the reflecting material according to the target arrangement parameter. The application improves the power generation of a tracking system of a bifacial photovoltaic module by optimizing the tracking rotation angle of the tracker and the arrangement of the ground reflecting material.
Owner:ARCTECH SOLAR HOLDING CO LTD

Method for producing a stacked structure

A method for producing a stacked structure comprises: a) providing a carrier substrate and an initial substrate, each having a front face and a back face, b) forming a buried weakened plane in the carrier substrate or in the initial substrate, by implanting light ions through the front face of either of the substrates, c) joining the carrier substrate and the initial substrate via their respective front faces, d) thinning the initial substrate via its back face to form a donor substrate e) providing a receiver substrate having a front face and a back face, f) joining the donor substrate and the receiver substrate via their respective front faces, and g) separating along the buried weakened plane, so as to form the stacked structure comprising the receiver substrate and a surface film including all or part of a donor layer originating from the initial substrate.
Owner:SOITEC SA

High-stability manufacturing method of multi-layer super-structure lens based on contour filling process

PendingCN120847926ALensNanopillarPhotoresist
The invention discloses a multilayer super-structure lens high-stability manufacturing method based on a contour filling process. The method comprises the following steps: making an alignment mark on the surface of a quartz wafer through a back surface overlay and lift-off scheme; photoetching the first surface structure according to the mark position to form a hole groove of the target structure, and the thickness of photoresist is greater than or equal to the height of the target nano-column structure; depositing a target material by using ALD (atomic layer deposition) equipment; photoetching the back surface structure according to the mark position to form a hole groove of the target structure, and the thickness of photoresist is greater than or equal to the height of the target nano-column structure; depositing a target material by using ALD (atomic layer deposition) equipment, and respectively carrying out CMP (chemical mechanical polishing) or whole-surface dry etching on the front surface and the back surface until the photoresist is exposed and meets the target thickness; and removing the photoresist in a Dry ash or wet method mode to form a double-sided metamaterial lens structure.
Owner:NANZHIXINSHI (NANJING) TECHNOLOGY CO LTD

Method for producing a semi-transparent motor-vehicle design element

The invention relates to a method for producing a semi-transparent motor vehicle design element (3), comprising the following steps:A providing a dimensionally stable, at least partially light-permeable substrate (1) which is heat-resistant for a temperature of at least 60° C., the substrate (1) having a front side (1a) and a rear side (1b),B introducing the substrate (1) into a vacuum chamber (2) and applying a first metallic semi-transparent layer (L1) by means of a PVD process to the substrate (1) according to step a) which is situated in the vacuum chamber (2), andC applying a light-impermeable cover layer (LD) to the front or rear side (1a, 1b) of the substrate (1), the light-impermeable cover layer (LD) containing at least one light-permeable opening (8) for reproducing at least one graphical symbol (SYM),steps B and C being carried out such that light (LSQ) passing through the at least one opening (8) in the light-impermeable cover layer (LD) from the rear side (1b) towards the front side (1a) of the substrate (1) is incident on the first metallic semi-transparent layer (L1) and at least partially passes outwards through the first metallic semi-transparent layer (L1) in order to project the at least one graphical symbol (SYM) represented by the at least one opening (8).
Owner:ZKW GRP GMBH

method of manufacturing a composite structure including a gradation step

The invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a support substrate of polycrystalline silicon carbide, the method comprising the following steps: 1) providing at least one donor substrate of monocrystalline silicon carbide, having a front face and a back face, the front face potentially having defects, called primary defects; 2) controlling the quality of the – at least one – donor substrate by a photoluminescence imaging technique so as to extract a map of the front face, called first map, listing the primary defects identified as being of the micro-hole type, of the complex star stacking fault type or of the point defect type;3) transferring a thin layer, from a surface layer of the – at least one – donor substrate, onto a polycrystalline silicon carbide support substrate, to obtain a composite structure and a residual donor substrate; 4) inspecting a free surface of the thin layer of the composite structure using a defect inspection technique by scattering an ultraviolet laser beam, so as to extract a map of the free surface, called the second map, listing defects, called secondary defects; 5) grading the composite structure, including a comparison of the first map and the second map. Figure to be published with the abstract: No figure;
Owner:SOITEC SA

Non-contact metallization system

ActiveCN115848031BPattern printingTypewritersEuhedral and anhedralLight emitter
The application discloses a non-contact metallization system, which comprises a glass substrate, a paste filling mechanism, a moving mechanism and a light emitter. The glass substrate has a front surface and a back surface arranged oppositely. The front surface is provided with a groove, the width of the groove is not less than 3 um, and the depth of the groove is not less than 5 um. The paste filling mechanism is used for filling paste in the groove of the glass substrate. The moving mechanism is used for keeping the front surface of the glass substrate and a receiving substrate in a certain interval. The light emitter is used for emitting light to the back surface of the glass substrate, so that the paste in the groove is transferred to the receiving substrate. The non-contact metallization system has the advantages of high precision and low cost.
Owner:深圳市圭华智能科技有限公司

Precision detection device

The utility model discloses a precision detection device, which comprises a first carrying mechanism, a back detection mechanism, a carrying platform and a front detection mechanism, wherein the first carrying mechanism is used for adsorbing and carrying a product to be detected; the back face detection mechanism comprises a back face polishing assembly and a back face detection assembly. According to the precision detection device, the first carrying mechanism is arranged to carry a to-be-detected product in a front adsorption mode, the back of the to-be-detected product is detected through the back polishing assembly and the back detection assembly in the carrying process, and then the to-be-detected product is placed on the carrying platform; when the carrying platform carries the to-be-detected product, the front side of the to-be-detected product is detected through the front side polishing assembly and the front side detection assembly, detection of the front side and the back side of the to-be-detected product is automatically completed, and time-consuming and labor-consuming manual overturning detection of a liquid crystal sheet is avoided. And bumping or scratching is easily caused by misoperation, so that the production efficiency is influenced.
Owner:HUIZHOU YONGCHENG AUTOMATION EQUIPMENT CO LTD

Crystallization tank with jacket for controlling potassium fluotantalate crystal particles

The invention belongs to the technical field of potassium fluotantalate crystallization treatment, and discloses a potassium fluotantalate crystal particle control crystallization tank with a jacket, the potassium fluotantalate crystal particle control crystallization tank comprises a jacket crystallization tank, the inner side of the lower end of the jacket crystallization tank is movably provided with a rapid collection assembly, and the rapid collection assembly comprises a collection cylinder; according to the invention, through the cooperation of the rapid collection assembly, the jacket crystallization tank and other structures, the structure of the collection cylinder can be directly controlled to enter the jacket crystallization tank, falling crystals are collected through the collection tank, and the crystallization efficiency is improved. After collection, the solution moves downwards, so that the solution in the jacket crystallization tank can be prevented from completely flowing out, and the solution can be quickly collected after single-layer crystallization in the jacket crystallization tank is realized, so that the crystallization uniformity is ensured, the solution can be quickly collected after one-time uniform crystallization is completed, and the influence on the use effect caused by large and non-uniform crystallization due to continuous crystallization is avoided.
Owner:JIUJIANG JINXIN NONFERROUS METALS CO LTD

manufacturing process for a composite structure including a grading step

The invention relates to a method for manufacturing a composite structure comprising a thin layer of monocrystalline silicon carbide disposed on a support substrate of polycrystalline silicon carbide, the method comprising the following steps: 1) the supply of at least one donor substrate of monocrystalline silicon carbide, having a front face and a back face, the front face potentially having defects, called primary defects; 2) the quality control of the – at least one – donor substrate by a photoluminescence imaging technique so as to extract a map of the front face, called the first map, listing the primary defects identified as being of the micro-hole type, of the complex type of star stacking faults or of the point defect type;3) the transfer of a thin film, originating from a surface layer of at least one donor substrate, onto a polycrystalline silicon carbide support substrate, to obtain a composite structure and a residual donor substrate; 4) the inspection of a free surface of the thin film of the composite structure using an ultraviolet laser beam scattering defect inspection technique, in order to extract a map of the free surface, referred to as the second map, listing defects, referred to as secondary defects; 5) the grading of the composite structure, including a comparison of the first and second maps. Figure to be published with the abstract: No figure;
Owner:SOITEC SA