The invention relates to a method for producing at least one first (205) and second
micromirror device (206). Here, a
silicon wafer (100), in particular plate-shaped, having a front side (110) and a back side (120) is provided. Then, a
silicon oxide layer (130) is applied to at least the front side (110) of the
silicon wafer (100, 101). Subsequently, the
silicon oxide layer (130) is removed such that at least one first separation region (131) and at least one second separation region (132) of the
silicon oxide layer (130) are produced, wherein the first (131) and second separation region (132) of the
silicon oxide layer (130) are arranged spatially separated from one another along a separation plane (140). Then, a silicon layer (150) is applied to the front side (110) of the silicon
wafer (101) and the silicon
oxide layer (130). Subsequently, an
etching mask (180) is applied (70) to the back side (120) of the silicon wafer (100), wherein the
etching mask (180) has a first opening (190) along the separation plane (140) of the first (131) and second separation region (132) of the silicon
oxide layer (130). Subsequently, the silicon layer (150, 350) and the silicon wafer (100, 101) are removed (80) by means of an
etching method in accordance with the etching
mask (180) on the back side (120) of the silicon wafer (100, 101) and in accordance with the silicon oxide layer (130) of the silicon wafer (100), in particular the first (131) and second separation region (132) of the silicon oxide layer (130), such that at least one first (205) and second
micromirror device (206) are produced.