High-speed modulation light-emitting diode and its manufacturing method

Abstract

The invention relates to a high-speed modulation light-emitting diode and a manufacturing method thereof. It includes a light-emitting diode chip, the light-emitting diode chip includes a light-emitting epitaxial structure, and the light-emitting epitaxial structure includes a buffer layer stacked in sequence, a first N-type GaN contact layer, a GaN depletion layer, a P-type AlGaN electron blocking layer, The first p-type indium gallium nitride layer, the quantum well layer, the second p-type indium gallium nitride layer, the n-type gallium nitride layer, the second n-type gallium nitride contact layer and the conductive layer, and the quantum well layer is undoped Any one of the In0.2Ga0.8N / In0.05Ga0.95N quantum well layer and the indium gallium nitride / gallium nitride quantum well layer deposited with a silicon-doped barrier with a concentration of 5×1017 cm-3 for four periods. The invention also provides a manufacturing method of the high-speed modulation light-emitting diode. The high-speed modulation light-emitting diode provided by the invention increases the modulation width while retaining light output power close to that of the traditional light-emitting diode.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a high-speed modulation light-emitting diode and a manufacturing method thereof. Background technique [0002] Semiconductor lighting, also known as solid-state lighting, refers to lighting using solid-state light-emitting devices as light sources, including light-emitting diodes (Light Emitting Diode, LED) and organic light-emitting diodes (Organic Light-Emitting Diode, OLED). In recent years, the semiconductor lighting technology known as "green lighting" has developed rapidly. Compared with traditional lighting sources, LED not only has low power consumption, long service life, small size, green environmental protection, but also has the advantages of good modulation performance and high response sensitivity. . Utilizing this feature of the LED, it can be used as lighting, and at the same time, the signal can be modulated onto the visible beam of the LED f...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem that the above-mentioned heterojunction bipolar transistor has a low upper limit frequency and cannot meet the needs of visible light communication, the present invention provides a high-speed modulation light-emitting diode based on the HBT structure and its manufacturing method. At the same time as the similar output power, the modulation width of the light emitting device is greatly improved

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