Hybrid silicon-based whispering gallery mode microcavity laser

Abstract

The invention discloses a hybrid silicon-based whispering gallery mode microcavity laser which adapts to a light source part of a silicon-based photonic integrated circuit. The hybrid silicon-based whispering gallery mode microcavity laser comprises a silicon-based waveguide part and an III-V semiconductor gain part. The III-V semiconductor gain part is formed on the silicon-based waveguide part. The silicon-based waveguide part is in an SOI (silicon-on-insulator) structure with silicon, silicon dioxide and silicon. The silicon-based waveguide part is made into a triangular, rectangular, circular or waveguide-coupled output form to allow for longitudinal mode control. The III-V semiconductor gain part made of gain material is bonded to the SOI structure directly and matches with the SOI structure to form evanescent field coupling output. The hybrid silicon-based whispering gallery mode microcavity laser has the advantages that single-mode output of laser source on a silicon-based semiconductor surface is achieved by a right-triangular, square or round whispering gallery mode microcavity, cavity surface need not be split, large-scale processing is facilitated, optical coupling output and single longitudinal mode operation are easy to implement, and the laser is simpler in process and higher in practicality than the conventional single-mode lasers.

Description

technical field [0001] The invention relates to the technical field of photonic optoelectronic device design, in particular to a hybrid silicon-based whispering gallery mode microcavity laser, which is suitable for photonic optoelectronic integrated applications. Background technique [0002] Silicon-based semiconductors are the cornerstone of the modern microelectronics industry, but their development is approaching physical limits, especially when it comes to interconnects. However, optoelectronic technology is in a stage of rapid development. Today's semiconductor light-emitting devices are mostly made of compound materials, which are not compatible with silicon microelectronics technology. Therefore, it is meaningful to integrate photonic technology and microelectronic technology to develop silicon-based optoelectronics science and technology. major. [0003] The hybrid laser of indium phosphide and silicon is considered to be the most promising technology suitable for ...

AI Technical Summary

Problems solved by technology

Bragg distributed feedback and distributed reflection are commonly used single longitudinal mode lasers. These lasers often require difficult or expensive processing methods such as holography or electron beams, and sometimes require secondary epitaxy. Single-chip multi-wavelength integration is difficult

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