Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

6 results about "Surface plasmon wave" patented technology

Adjustable notch filter based on a ridge waveguide sspp structure

This invention provides an adjustable notch filter based on a ridge waveguide SSPP structure, relating to the field of wireless communication technology. By introducing independent planar adjustable notch units into the ridge waveguide SSPP structure, the notch frequency can be continuously adjusted without compromising the surface wave propagation characteristics and frequency-selective transmission response of the SSPP. The SSPP structure is formed by periodically etching multiple grooves along the propagation direction on a metal ridge, with continuous portions of the metal ridge maintained between adjacent grooves. These periodic grooves modulate the dispersion characteristics of the electromagnetic field within the ridge waveguide, enabling the ridge waveguide to support equivalent surface plasmon wave propagation, thereby forming a stable frequency-selective transmission response within a predetermined frequency range. The planar adjustable notch unit constructs a main transmission path and a secondary transmission path, utilizing the destructive interference of the two paths at a specific frequency to create a notch effect. Simultaneously, by changing the equivalent capacitance value of the varactor diode, the notch frequency can be continuously adjusted within the predetermined frequency range.
Owner:NANTONG UNIV

Biosensor with large detection range

The utility model discloses a biosensor with a large detection range, which comprises an optical fiber body, a sensing area is formed on the optical fiber body, and a gold film layer and an indium gallium arsenic and gold nanoparticle film layer are respectively attached to the surface of the sensing area from inside to outside. According to the technical scheme, the surface electric field intensity of the gold film is improved by utilizing high carrier mobility and high light absorptivity of indium gallium arsenic, the sensitivity of the sensor is further improved, and an enhanced local electric field is generated between the indium gallium arsenic film and the gold nanoparticles by utilizing mutual coupling of surface plasmon polaritons of indium gallium arsenic and local plasmon polaritons generated by the gold nanoparticles, so that the sensitivity of the sensor is improved. The sensor structure provided by the technical scheme has relatively high sensing sensitivity and chemical stability, real-time monitoring can be realized, and the detection range of the biosensor is further expanded.
Owner:NORTHEASTERN UNIV CHINA

Terahertz three-dimensional link interconnection-oriented bistable adjustable pseudo surface plasmon waveguide and preparation method thereof

The invention discloses a terahertz three-dimensional link interconnection-oriented bistable adjustable pseudo surface plasmon waveguide and a preparation method thereof, and belongs to the technical field of terahertz on-chip communication, the waveguide comprises a feed structure, an actuator, a patterned metal patch, a flexible dielectric substrate and a fiber-reinforced active layer, wherein the fiber-reinforced active layer is provided with a positive thermal response area and a negative thermal response area, S-shaped bending can be generated under photo-thermal excitation, and dynamic switchable interconnection between chips with different heights in a three-dimensional space is achieved. The working frequency band of the waveguide is 31.56-127.71 GHz, the relative bandwidth reaches 120%, the insertion loss is lower than 1.5 dB, and the waveguide has the characteristics of low loss, ultra wide band and bistable holding. The preparation method comprises the steps of waveguide main body structure processing, fiber reinforced active layer compounding, actuator integration and overall assembly. The method solves the problems that the existing terahertz interconnection dimension is limited and the resource allocation is fixed, and is suitable for a high-density three-dimensional integrated and dynamic reconfigurable system on chip.
Owner:JILIN UNIVERSITY

A kanamycin U-shaped optical fiber sensor, a preparation method and an optical fiber sensing system

This application proposes a kanamycin U-shaped fiber optic sensor, its fabrication method, and a fiber optic sensing system, belonging to the field of sensor detection technology. The sensor includes: a fiber core, a cladding, a silver film, a polydopamine layer, silver nanoparticles, a kanamycin aptamer, and mercaptohexanol. The silver film serves as a metal-sensitive layer, used to achieve wave vector matching between free electrons on the surface of the silver film and evanescent waves to excite plasmon resonance on the surface of the silver film. The polydopamine layer is used to immobilize the silver nanoparticles. The silver nanoparticles are used to excite the LSPR effect and to modify the surface of the kanamycin aptamer. Mercaptohexanol is used to fill non-specific binding sites. The kanamycin aptamer binds to kanamycin to change the refractive index of the fiber surface, thereby altering the resonance conditions between the evanescent wave and the surface plasmon wave, causing a redshift of the resonance wavelength. The sensor of this application shortens the response time of the kanamycin U-shaped fiber optic sensor, is simple to fabricate, and is small in size and lightweight.
Owner:NORTHEASTERN UNIV CHINA

High-power terahertz photoconductive emission device and preparation method thereof

The invention discloses a high-power terahertz photoconductive emission device and a preparation method thereof, and relates to the technical field of terahertz devices. Comprising a sapphire substrate, a Si-GaN layer, a coplanar strip line waveguide structure layer and a SiO2 passivation layer, the Si-GaN layer is integrated on the sapphire substrate, and the coplanar strip line waveguide structure layer is prepared on the Si-GaN layer; the coplanar strip line waveguide structure layer comprises an electrode structure layer composed of a signal electrode and a grounding electrode, and a photoconductive gap between the signal electrode and the grounding electrode adopts a surface plasmon waveguide matching design; the SiO2 passivation layer is located at the photoconductive gap; and the Si-GaN layer is made of a Fe doped Si-GaN material. The problems that a traditional LT-GaAs-based device is low in power and insufficient in efficiency are solved.
Owner:BEIJING INST OF RADIO METROLOGY & MEASUREMENT

Gst-based terahertz surface plasmon dynamic wavefront modulation device

The present application relates to a terahertz dynamic surface plasmon wavefront modulation device, and provides a new device for realizing terahertz surface plasmon wavefront dynamic modulation by using a GST metasurface.The present application is a terahertz surface plasmon dynamic wavefront modulation device based on GST, which comprises a silicon substrate and a lossy metal aluminum film with a subwavelength rectangular slit resonator array on the silicon substrate; the device comprises two columns of slit resonator arrays which are perpendicular to each other along the y-axis and form an active group or a passive group; the active group and the passive group differ in that the surface of the metal aluminum film of the active group is deposited with a germanium antimony tellurium (GST) film strip, while the surface of the passive group is not deposited; the active group and the passive group are arranged adjacently; by using the rotation angle of the subwavelength slit resonator, the relative distance between the subwavelength slit resonators and the GST phase transition characteristics, the switching of different functions of the surface plasmon can be realized.The present application is mainly applied to the design and manufacture of surface plasmon wavefront modulation devices.
Owner:TIANJIN UNIV OF TECH & EDUCATION (TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE)