37results about How to "Potential" patented technology

A heterojunction bipolar transistor has a raised breakdown voltage and restrains the rising characteristic of IC-VCE characteristic from degrading. The collector region includes first, second, and third collector layers of semiconductor. The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region. The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region. The third collector layer has a higher doping concentration than the second collector layer in such a way as to be located between or sandwiched by the first collector layer and the second collector layer.

Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.

A solid-state imaging device is provided which has preferable linearity of signal outputs according to light intensities and does not cause dark defects even at a low light intensity. The solid-state imaging device comprises: a ring gate having a non-uniform width; a source region formed inside the ring gate; a drain region formed surrounding a circumference of the ring gate; and a carrier pocket formed under the ring gate, wherein a region where (X divided by Y) is the smallest substantially coincides with a region where Z is the shortest; X is a pocket-to-source distance; Y is a pocket-to-drain distance; and Z is a source-to-drain distance.

The invention discloses an energy-saving efficient code spraying printing machine. The code spraying printing machine comprises a rack, a conveying mechanism arranged on the rack and used for conveying materials, and a code spraying mechanism arranged on the rack and used for code spraying. The code spraying mechanism comprises a code spraying printing machine sprayer, an adjusting mechanism for fixing the code spraying mechanism sprayer and adjusting the position of the code spraying mechanism sprayer, and a supporting frame arranged on the rack and used for fixing or moving the adjusting mechanism. The supporting frame comprises moving idler wheels used for moving the whole code spraying mechanism to advance or retreat, and a lifting support arranged on the moving idler wheels and used for lifting the adjusting mechanism. The adjusting mechanism comprises a transverse support connected with the lifting support and used for moving the code spraying mechanism sprayer to move transversely, and a sliding support, wherein the sliding support is arranged on the transverse support, can slide on the transverse support and is used for being connected with the code spraying mechanism sprayer. The machine is simple in structure, and convenient to operate and maintain, waste of work hours is avoided, products are neat and uniform in code spraying after codes are sprayed, the derating rate is reduced, and the production cost is reduced.

The invention provides a preparation method for a graphene quantum dot. The preparation method comprises the following steps: preparing low-temperature expanded graphite; dispersing the low-temperature expanded graphite in a sodium dodecyl sulfate aqueous solution, carrying out ultrasonic treatment and centrifuging treatment, and subjecting a supernatant to filtering so as to obtain a transparentlight-black solution; and subjecting the transparent light-black solution to dialysis in deionized water, and removing impurities which are soluble in sodium dodecyl sulfate so as to obtain a transparent light-gray graphene quantum dot solution. The preparation method for the graphene quantum dot provided by the invention has the advantages of clear process and principle, simple and controllable operation, economy, high efficiency, sustainability, high product yield and high product quality through intercalation-stripping-dispersion treatment to an expanded graphene raw material by combinationof high-power ultrasonic wave in an SDS solution.