Metal glass surface in-situ metallization multilayer eutectic bonding method and device based on electrogenerated cationic conduction

Abstract

The invention discloses a metal/glass surface in-situ metallization multilayer eutectic bonding method and device based on electrogenerated cationic conduction. The method comprises the following steps: alternately stacking a plurality of layers of pre-coated metal test pieces and cationic conductive glass, and putting the stacked metal test pieces and cationic conductive glass into a vacuum furnace, enabling each layer of metal and glass test piece to be respectively communicated with a negative electrode and a positive electrode of a direct-current electrostatic field according to a bondingsequence, heating and loading an electric field while applying axial pressure to the bonded piece, activating ionization of cations in the glass under high temperature and electric field repulsive force to make the cations directionally migrate to the bonding surface of the glass to be enriched, carrying out a redox reaction on the cations and free charges to generate elementary substances, then carrying out in-situ growth in a micro-nano structure on the surface of the glass to form a metal layer, carrying out diffusion and eutectic reaction on the metal layer and a coating film at an eutectic temperature to realize bonding, and repeating the processes to carry out multilayer bonding. Anodic bonding and eutectic bonding principles are combined, so high-conductivity, high-thermal conductivity and high-strength multilayer bonding of metal and glass is realized under the conditions of low temperature and low voltage.

Description

technical field [0001] The invention belongs to the field of optoelectronic packaging, and relates to the bonding technology of metal sheets and glass wafers in the manufacturing process of electronic and photovoltaic devices. Specifically, under the composite action of temperature field-DC electrostatic field, based on the electro-cation migration mechanism of cationic conductive glass, to promote A method and device for low temperature eutectic bonding of vertically stacked metals and glass. Background technique [0002] Glass / metal sealing can integrate two materials with greatly different physical and chemical properties and highly complementary properties, and is widely used in the manufacturing fields of diodes, micro-electromechanical systems MEMS, integrated circuits, photovoltaic devices and fuel cells. With the development of electronic and photovoltaic devices in the direction of high integration, multi-function and miniaturization, optoelectronic packaging techno...

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Problems solved by technology

[0006] It can be seen that the anodic bonding process is simple and the wafer spacing is small, but it does not have the ohmic contact and excellent heat dissipation characteristic of eutectic bonding (or brazing)

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