The invention belongs to the field of nanophotonics, and provides a silicon-based ultra-wide spectrum photon absorber and a preparation method thereof, and aims to solve the technical problem that inthe prior art, silicon-based optical and photoelectric devices cannot achieve efficient absorption in ultraviolet, visible and near-infrared bands. The absorber comprises a first metal film layer, a first disordered nano bowl array layer, a silicon substrate, a second disordered silicon nano bowl array layer and a second metal film layer, a double-sided disordered metal/silicon nano bowl array composite structure can efficiently absorb more than 80% of incident photons within the waveband range of 200-2500nm, is insensitive to the polarization and angle of incident light, and has a wide application prospect in the fields of photoelectric detection and reverse detection, solar cells, photoelectric sensing and the like.