33 results about "Nanophotonics" patented technology

Controlling, guiding, manipulating, and circuiting light and performing surface-enhanced spectroscopy in a medium comprising plasmonic nanomaterials via the excitation of plasmon modes in the materials. The plasmonic nanomaterials are based on metal films with or without arrays of nanoholes and / or on metal nanowires and / or spheroids. Also devices and methods employing such plasmonic nanomaterials.

The present invention relates to near-field scanning optical microscopy (NSOM) and near-field / far-field scanning microscopy methods, systems and devices that permit the imaging of biological samples, including biological samples or structures that are smaller than the wavelength of light. In one embodiment, the present invention permits the production of multi-spectral, polarimetric, near-field microscopy systems that can achieve a spatial resolution of less than 100 nanometers. In another embodiment, the present invention permits the production of a multifunctional, multi-spectral, polarimetric, near-field / far-field microscopy that can achieve enhanced sub-surface and in-depth imaging of biological samples. In still another embodiment, the present invention relates to the use of polar molecules as new optical contrast agents for imaging applications (e.g., cancer detection).

A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.

Systems and methods of sensing intraocular pressure are described. An example miniaturized intraocular pressure (IOP) monitoring system is provided using a nanophotonics-based implantable IOP sensor with remote optical readout that can be adapted for both patient and research use. A handheld detector optically excites the pressure-sensitive nanophotonic structure of the IOP-sensing implant placed in the anterior chamber and detects the reflected light, whose optical signature changes as a function of IOP. Optical detection eliminates the need for large, complex LC structures and simplifies sensor design. The use of nanophotonic components improves the sensor's resolution and sensitivity, increases optical readout distance, and reduces its size by a factor of 10-30 over previous implants. Its small size and convenient optical readout allows frequent and accurate self-tracking of IOP by patients in home settings.

A new class of surface plasmon waveguides is presented. The basis of these structures is the presence of surface plasmon modes, supported on the interfaces between the dielectric regions and the flat unpatterned surface of a bulk metallic substrate. The waveguides discussed here are promising to have significant applications in the field of nanophotonics by being able to simultaneously shrink length, time and energy scales, allowing for easy coupling over their entire bandwidth of operation, and exhibiting minimal absorption losses limited only by the intrinsic loss of the metallic substrate. These principles can be used for many frequency regimes (from GHz and lower, all the way to optical).

Methods for integrated electronic and photonic design include laying out electronic and photonic design components in a design environment; adjusting photonic components according to photonic design requirements using a processor; checking design rules for electronic and photonic components according to manufacturing requirements; and adjusting component positioning and size to reconcile conflicts between electronic and photonic components.

A method of forming an integrated photonic semiconductor structure having a photodetector device and a CMOS device may include depositing a dielectric stack over the photodetector device such that the dielectric stack encapsulates the photodetector. An opening is etched into the dielectric stack down to an upper surface of a region of an active area of the photodetector. A first metal layer is deposited directly onto the upper surface of the region of the active area via the opening such that the first metal layer may cover the region of the active area. Within the same mask level, a plurality of contacts including a second metal layer are located on the first metal layer and on the CMOS device. The first metal layer isolates the active area from the occurrence of metal intermixing between the second metal layer and the active area of the photodetector.

A device for generation of genuine random numbers, uses quantum stochastic processes in optical parametric nonlinear media. The dimensionality of the random numbers is varied from 2 to over 100,000. Their statistical properties, including the correlation function amongst random numbers, are tailored using linear and nonlinear optical circuits following the parametric nonlinear media. Both the generation and manipulation of random numbers are integrated on a single nanophotonics chip. By incorporating optoelectric effects, fast streams of random numbers are created in custom statistical properties, which are updated or reconfigured in real time, such as at 10 GHz speed. The unpredictability of the random numbers is quantifying by evaluating their min-entropy. The genuineness of quantum random numbers is tested using both statistical tools and independently verified by measuring the quantum entanglement between the photons in real time.

The invention relates to the technical field of reactor engineering and discloses a nanophotonics multi-parameter measurement platform. The nanophotonics multi-parameter measurement platform comprises a multi-parameter variable excitation system, a sample position direction fine-adjusting unit, a microscope observation alignment system, a scanning near-field optical microscope detection system and a computer; the sample position direction fine-adjusting unit is used for mounting a sample to be measured; the multi-parameter variable excitation system provides a lighting excitation light source signal to the sample to be measured; the microscope observation alignment system adjusts an imaging area of the sample to be measured, collects the image information of the sample to be measured, and transmits the image information to the computer to be displayed; the scanning near-field optical microscope detection system collects the optical near-field information of the sample to be measured and transmits the optical near-field information to the computer; and the computer processes the optical near-field information and then displays the processed optical near-field information. The nano-optics multi-parameter measurement platform is compact in structure, can achieve adjustment with multiple degrees of freedom, and can achieve optical excitation of variable excitation wavelength, continuous adjustment of the incident angle and controllable polarization state on a given excitation area of a nano photonics device.

The invention discloses a preparing method and application of an orthorhombic phase cesium-lead iodide monocrystal nanowire. The preparing method comprises the steps of adding lead iodide to gamma-butyrolactone which is in a protective atmosphere and under stirring at the temperature of 68.5-72.5 DEG C, so that brick red turbid solution is obtained; then adding cesium iodide to the brick red turbid solution to obtain mixed solution; placing the mixed solution in a protective atmosphere at the temperature of 68.5-72.5 DEG C to be stirred constantly for at least 80 min to obtain luminous yellow mixed solution; cooling the luminous yellow mixed solution, and placing the luminous yellow mixed solution in an environment with relative humidity smaller than or equal to 20% and temperature of 68.5-72.5 DEG C to be evaporated to dryness, so that the orthorhombic phase cesium-lead iodide monocrystal nanowire is obtained, wherein the single crystal growth direction of the nanowire is <100>, wire diameter is 0.1-0.15 micron, and wire length is larger than or equal to 100 microns. The nanowire can serve as a basic unit to build a nanowire device or nanowire array device, and can generate X-ray fluorescence of 464+ / -10 and 564+ / -10 nm under the excitation of X rays. The nanomwire is expected to be widely applied to making of nanophotonics basis units, photoelectric detectors, high-energy ray detection and the like.