8 results about "Near field optical microscope" patented technology

The invention relates to the technical field of biomedical imaging and terahertz detection, in particular to a terahertz near-field imaging quality analysis system and method. According to the technical scheme, the system comprises an atomic force microscope system, a terahertz source, an image acquisition module, an image scoring module and a data processing module, and the atomic force microscope system adopts a tapping mode based on the terahertz scattering type scanning near-field optical microscope technology and comprises a Z voltage control unit used for adjusting the probe insertion depth; the terahertz source is used for providing terahertz waves required by imaging, and the terahertz source and the probe module of the atomic force microscope system are coaxially arranged. By quantifying the association rule of the probe insertion depth and the imaging quality, the core pain points of blind parameter adjustment and unstable quality in terahertz near-field imaging are solved at one stroke, the imaging consistency is greatly improved, the detection process and the quality evaluation system are exclusive, the method is particularly suitable for undyed paraffin sections, and the detection accuracy is improved. And the pathological characteristics of papillary carcinoma cells can be clearly presented.

The invention relates to a nanoscale infrared photothermal imaging system and an imaging method. The method comprises the following steps: introducing lasers with different wavelengths into a scanning noise infrared near-field optical microscope system; a laser spot is limited to be less than 10 microns, and rough calibration of the probe and the laser spot can be carried out; dynamically and continuously tuning the power of the introduced laser; and obtaining a nano-scale heat distribution image of the sample under laser excitation. The laser with different wavelengths can be introduced into a scanning noise infrared near-field optical microscope system, the power of the laser with the corresponding wavelength can be dynamically and continuously tuned, and a nanoscale photo-thermal distribution image of a sample under excitation of the laser with the tunable wavelength and power can be obtained.

The application discloses an atomic force microscope laser head capable of being applied to near-field optics, and belongs to the optical instrument field. A scanner fixing disc is installed on an atomic force head assembly, a mirror and a probe assembly are installed on the scanner fixing disc, the scanner fixing disc is provided with an optical path channel, the mirror is located in the optical path channel, a reflecting surface of the mirror faces the probe, the atomic force transmitter, the mirror and the probe are located on the same straight line with the optical path channel, light emitted by the atomic force transmitter is reflected to the probe through the mirror and is reflected to an atomic force receiver by the probe, a reflecting assembly reflects laser emitted by a laser transmitter of a near-field optical device to the probe, the probe reflects the laser and the reflected laser is reflected to a laser receiver through the reflecting assembly. Through the above design, the laser head has the functions of the near-field optical microscope and the atomic force microscope simultaneously, only one probe is needed, and the functions of the near-field optical microscope and the atomic force microscope can be used separately.

The utility model discloses an open type laser head device combined with a near-field optical microscope, which comprises a light source emitting device, a light source receiving device and a scanning probe, and an included angle alpha is formed between the top surface of a cantilever of the scanning probe and the horizontal plane. The plane where an AFM detection light path formed by the scanning probe between the light source emitting device and the light source receiving device is located is set as a second plane, an included angle b is formed between a first intersecting line of the top face of a cantilever of the scanning probe and the horizontal plane and a second intersecting line of the second plane and the horizontal plane, and the included angle b is larger than or equal to-30 degrees and smaller than or equal to 30 degrees. According to the scheme, the position of the AFM detection light path is adjusted, so that a spatially staggered position relationship can be formed between the plane 2 where the AFM detection light path is located and the plane where the SNOM detection light path is located, and the simultaneous detection of the two light paths on the sample cannot be influenced.

The present disclosure relates to a near-field electric field quantitative measurement method and device, electronic equipment and storage medium. The method comprises: obtaining a first linear relationship between a first incident electric field and a first near-field electric field; obtaining an instrument constant of a scanning near-field optical microscope; obtaining a first linear coefficient of any to-be-measured point on a to-be-measured sample according to the instrument constant and the first linear relationship; obtaining a reconstructed near-field electric field of the to-be-measured point under an actual incident electric field incident to the to-be-measured sample as a near-field electric field quantitative measurement result of the to-be-measured point according to the actual incident electric field and the first linear coefficient of the to-be-measured point. The process combines the first linear relationship reflecting the incident electric field and the near-field electric field relationship of the first measurement area of the to-be-measured sample with the instrument constant reflecting the influence of the tip-sample coupling on the near-field electric field of the surface of the to-be-measured sample, realizes the reconstruction of the near-field electric field of the surface of the to-be-measured sample, and improves the accuracy of the quantitative measurement of the near-field electric field of the surface of the to-be-measured sample.

A method for scanning near-field optical microscopy comprises illuminating an apertureless atomic force microscopy (AFM) probe with electromagnetic energy having a frequency in the Terahertz range, where the sample under observation includes a dielectric layer having a thickness greater than the radius of the tip of the AFM probe. A system for scanning near-field optical microscopy comprises a collimated light source for emitting collimated light, a photoconductive antenna for converting collimated light into electromagnetic energy having a frequency in the Terahertz range, an AFM probe, a sample comprising a dielectric layer, the dielectric layer having a thickness greater than the radius of the probe tip; and a detector configured to detect energy that has interacted with the sample.

The invention discloses a quantitative characterization method for a multi-layer thin film by using a scanning near-field optical microscopy technology, which comprises the following steps: standardization preparation: calibrating experimental parameters of a scanning near-field optical microscope by using a calibration sample with a known structure, then measuring, and measuring a multi-layer thin film sample to be measured by using the calibrated experimental parameters. According to the non-destructive thin film characterization method, nanoscale transverse and longitudinal resolution ratios can be achieved, meanwhile, the non-destructive thin film characterization method has chemical characteristics, the average thickness difference of a single-layer material is 3.46 nm, the average thickness difference of a double-layer material is 4.49 nm, and the thickness of each layer is quantitatively inverted. The method is expected to be used as a lossless and highly-specific method for mapping and chemical characterization of a nanoscale object embedded in a main body material.

The present disclosure relates to the technical field of electric field measurement, and comprises a method and apparatus for direct quantitative measurement of near-field electric field intensity, and a storage medium. The method comprises: controlling a tip of a scattering type scanning near-field optical microscope to move above a test point on the surface of a sample to be measured and in a first direction perpendicular to the surface of said sample, so as to obtain a first measurement result corresponding to each movement position; determining a first trend curve and a second trend curve on the basis of the first measurement result; determining a vibration equilibrium position of the tip on the basis of the first trend curve; determining shape parameters of an equivalent geometric shape of the tip on the basis of the second trend curve; controlling the tip to move in a second direction parallel to the surface of said sample to obtain a second measurement result; and determining the near-field electric field intensity of the surface of said sample on the basis of the second measurement result, the shape parameters, the vibration equilibrium position, and an electric field intensity measurement model. The near-field electric field intensity distribution on the surfaces of samples to be measured can be directly obtained, thereby achieving electric field intensity comparison between two scanning results.