18 results about "Near field optical microscope" patented technology

A detection method and detection apparatus for atomic-scale defects in gallium oxide crystals. In the detection method, a scattering-type scanning near-field optical microscope system and / or a nano-infrared system are used to detect atomic-scale defects in gallium oxide crystals. Aiming at real requirements for the detection of internal structural defects in Ga2O3 materials and devices, a near-field optical microscope system and a nano-infrared system are used to detect structural defects in Ga2O3 crystals, thereby realizing highly sensitive and nondestructive detection of atomic-scale defects in materials.

The present application belongs to the technical field of near-field optical testing, and specifically discloses a method and device for obtaining material information based on near-field optical testing, the method comprising: introducing pump light to focus below the needle tip of a near-field optical microscope and introducing detection light to illuminate below the needle tip, wherein a sample to be tested is arranged below the needle tip; under different pump-detection delays, a set of spectra of the sample to be tested is measured by a near-field optical microscope; a set of spectra of the sample to be tested is input into a deep learning model to obtain material information output by the deep learning model. By combining the means of measuring the spectra of the sample to be tested under different pump-detection delays with the means of using a deep learning model for prediction, the present application can ensure the efficiency of the test while ensuring the accuracy of the prediction, and realize the efficient and accurate acquisition of material information of the sample to be tested using near-field optical signals.

The invention relates to the technical field of biomedical imaging and terahertz detection, in particular to a terahertz near-field imaging quality analysis system and method. According to the technical scheme, the system comprises an atomic force microscope system, a terahertz source, an image acquisition module, an image scoring module and a data processing module, and the atomic force microscope system adopts a tapping mode based on the terahertz scattering type scanning near-field optical microscope technology and comprises a Z voltage control unit used for adjusting the probe insertion depth; the terahertz source is used for providing terahertz waves required by imaging, and the terahertz source and the probe module of the atomic force microscope system are coaxially arranged. By quantifying the association rule of the probe insertion depth and the imaging quality, the core pain points of blind parameter adjustment and unstable quality in terahertz near-field imaging are solved at one stroke, the imaging consistency is greatly improved, the detection process and the quality evaluation system are exclusive, the method is particularly suitable for undyed paraffin sections, and the detection accuracy is improved. And the pathological characteristics of papillary carcinoma cells can be clearly presented.

The invention relates to a nanoscale infrared photothermal imaging system and an imaging method. The method comprises the following steps: introducing lasers with different wavelengths into a scanning noise infrared near-field optical microscope system; a laser spot is limited to be less than 10 microns, and rough calibration of the probe and the laser spot can be carried out; dynamically and continuously tuning the power of the introduced laser; and obtaining a nano-scale heat distribution image of the sample under laser excitation. The laser with different wavelengths can be introduced into a scanning noise infrared near-field optical microscope system, the power of the laser with the corresponding wavelength can be dynamically and continuously tuned, and a nanoscale photo-thermal distribution image of a sample under excitation of the laser with the tunable wavelength and power can be obtained.

The present invention provides a method for characterizing the real-space characteristics of a two-dimensional polariton, comprising the following steps: S1: placing a sample to be tested on a SiO2 / Si substrate, so that an edge of the sample to be tested is at 45° with the edge of a cantilever arm of a scattering type near-field optical microscope; S2: scanning the needle tip of the scattering type near-field optical microscope along an edge perpendicular to the sample to be tested, sequentially changing the wavelength of an excitation laser light source, and obtaining a near-field real-space image by scanning the scattering type near-field optical microscope; S3: performing Fourier transform processing on the near-field real-space images obtained in step 2 one by one, and obtaining the real part k′ of the wave vector of the hybrid polariton mode respectively. p and propagation length L p ; S4: According to the formula, the wave vector k′ of the hybrid polaritons at each wavelength is obtained p and L p The present invention breaks through the diffraction limit through a scattering near-field optical microscope, explores the physical phenomenon of the interaction between light and matter in the near-field region, and presents the real-space characteristics of two-dimensional polaritons.

The application discloses an atomic force microscope laser head capable of being applied to near-field optics, and belongs to the optical instrument field. A scanner fixing disc is installed on an atomic force head assembly, a mirror and a probe assembly are installed on the scanner fixing disc, the scanner fixing disc is provided with an optical path channel, the mirror is located in the optical path channel, a reflecting surface of the mirror faces the probe, the atomic force transmitter, the mirror and the probe are located on the same straight line with the optical path channel, light emitted by the atomic force transmitter is reflected to the probe through the mirror and is reflected to an atomic force receiver by the probe, a reflecting assembly reflects laser emitted by a laser transmitter of a near-field optical device to the probe, the probe reflects the laser and the reflected laser is reflected to a laser receiver through the reflecting assembly. Through the above design, the laser head has the functions of the near-field optical microscope and the atomic force microscope simultaneously, only one probe is needed, and the functions of the near-field optical microscope and the atomic force microscope can be used separately.

The invention discloses a desoxyribonucleic acid strand sequencing method based on a terahertz scanning near-field optical microscope, which comprises the following steps: preparing a straightened desoxyribonucleic acid strand sample, and obtaining a terahertz near-field spatial position image and a near-field absorption spectrum of the desoxyribonucleic acid strand by using the terahertz scanning near-field optical microscope; according to a comparison database between different arrangement combinations of nucleotides and terahertz near-field signal spectral characteristics, determining a corresponding relation between terahertz near-field absorption spectra changing along with scanning positions and nucleotide combination sequences, accurately positioning the types of the nucleotides, and realizing sequencing. In addition, the methylation region in the desoxyribonucleic acid chain can be visualized. According to the method provided by the invention, accurate and efficient sequencing of the single deoxynucleotide chain and identification of the methylation state of the single deoxynucleotide chain can be realized by a physical lossless method. The method disclosed by the invention is wider in application range and lower in cost, and can adapt to different forms and types of nucleic acid samples.

The invention provides a method for measuring characteristics of a nerve in a terahertz wave band. The method comprises the following steps: extracting the nerve of an experimental organism and preparing the nerve into a nerve sample with the thickness of 1-500nm; scanning and detecting a nerve sample point by point by using a terahertz near-field imaging system based on a scattering type scanning near-field optical microscope to obtain atomic force microscope height information and terahertz spectrum information; extracting terahertz feature information in the terahertz spectrum information, and reconstructing a terahertz image by using the terahertz feature information to obtain a reconstructed image; according to the actual structure of the nerve sample, determining a corresponding structure in the reconstructed image and extracting terahertz data of the corresponding structure; and calculating the refractive index optical parameter of the corresponding structure in the terahertz wave band to obtain the characteristics of the nerve sample in the terahertz wave band. According to the invention, the characteristics of the nerve in the terahertz wave band can be obtained, and the propagation rule of the neural signal in the neurons with different structures is disclosed, so that the essential mechanism of neural signal transmission is deeply explored.

The present disclosure provides an optical micro-nano antenna probe, a probe assembly, a nano-infrared spectrometer, and a scattering type scanning near-field optical microscope. The optical micro-nano antenna probe includes a needle body and a composite layer, at least part of the surface of the needle body is covered by the composite layer; the composite layer includes a stacked first needle body covering layer and a second needle body covering layer, the first needle body covering layer is located between the needle body and the second needle body covering layer; the material of the first needle body covering layer includes an optical dielectric material; the material of the second needle body covering layer includes graphene. The optical micro-nano antenna probe of the present disclosure can be used as a nano-infrared spectrum probe for a nano-infrared spectrometer; it can also be used as a scattering type near-field optical microscope probe for near-field optical imaging. The optical micro-nano antenna probe of the present disclosure can be a scanning probe microscope probe that enhances the detection sensitivity of nano-infrared spectrum and near-field optical imaging.

The utility model discloses an open type laser head device combined with a near-field optical microscope, which comprises a light source emitting device, a light source receiving device and a scanning probe, and an included angle alpha is formed between the top surface of a cantilever of the scanning probe and the horizontal plane. The plane where an AFM detection light path formed by the scanning probe between the light source emitting device and the light source receiving device is located is set as a second plane, an included angle b is formed between a first intersecting line of the top face of a cantilever of the scanning probe and the horizontal plane and a second intersecting line of the second plane and the horizontal plane, and the included angle b is larger than or equal to-30 degrees and smaller than or equal to 30 degrees. According to the scheme, the position of the AFM detection light path is adjusted, so that a spatially staggered position relationship can be formed between the plane 2 where the AFM detection light path is located and the plane where the SNOM detection light path is located, and the simultaneous detection of the two light paths on the sample cannot be influenced.

The present disclosure relates to a near-field electric field quantitative measurement method and device, electronic equipment and storage medium. The method comprises: obtaining a first linear relationship between a first incident electric field and a first near-field electric field; obtaining an instrument constant of a scanning near-field optical microscope; obtaining a first linear coefficient of any to-be-measured point on a to-be-measured sample according to the instrument constant and the first linear relationship; obtaining a reconstructed near-field electric field of the to-be-measured point under an actual incident electric field incident to the to-be-measured sample as a near-field electric field quantitative measurement result of the to-be-measured point according to the actual incident electric field and the first linear coefficient of the to-be-measured point. The process combines the first linear relationship reflecting the incident electric field and the near-field electric field relationship of the first measurement area of the to-be-measured sample with the instrument constant reflecting the influence of the tip-sample coupling on the near-field electric field of the surface of the to-be-measured sample, realizes the reconstruction of the near-field electric field of the surface of the to-be-measured sample, and improves the accuracy of the quantitative measurement of the near-field electric field of the surface of the to-be-measured sample.

A method of scattering-type scanning near-field optical microscopy (s-SNOM) comprises placing an s-SNOM tip 11 at a near-field distance from a sample 1 and subjecting the s-SNOM tip 11 to a mechanical oscillation, which provides a primary modulation, illuminating the oscillating s-SNOM tip 11 with a sequence of illumination light pulses, wherein each of the illumination light pulses hits the s-SNOM tip 11 at a specific s-SNOM tip modulation phase φi of the mechanical oscillation, collecting scattering light pulse amplitudes Si, each being created by scattering one of the illumination light pulses at the s-SNOM tip 11, using a scattering light detector device 30, collecting the s-SNOM tip modulation phase i associated to each of the collected scattering light pulse amplitudes Si, using a mechanical oscillation detector device 40, and calculating an s-SNOM near-field signal by demodulating a scattering light function S(φi) of the scattering light pulse amplitudes Si in dependency on the s-SNOM tip modulation phases φi, wherein each of the s-SNOM tip modulation phases pi is obtained by splitting an output signal of the mechanical oscillation detector device 40 into a first output signal portion X and a second output signal portion Y being phaseshifted relative to the first output signal portion X and calculating the s-SNOM tip modulation phase φi of the primary modulation from the first and second output signal portions X, Y. Furthermore, a scanning near-field optical microscopy apparatus 100 is described.

The invention discloses an all-fiber common-path illumination and collection system and method. The near-field optical imaging system comprises an optical fiber probe, a laser, a polarization controller, a detector, an optical fiber and an optical fiber light splitting structure, laser emitted by the laser device is coupled into the optical fiber and is transmitted to the tip of the optical fiber probe through the optical fiber light splitting structure to perform near-field illumination on a sample; and the excited near-field optical signal enters the optical fiber probe, returns to the optical fiber light splitting structure along the original path, and is further transmitted to the detector to obtain the near-field optical signal. According to the invention, high signal-to-noise ratio measurement of transparent and non-transparent samples by using the optical fiber probe can be realized, and a complex optical path system of the near-field optical microscope is simplified, so that the near-field optical microscope can be applied to a shear force type atomic force microscope and a scanning tunneling microscope to realize multi-modal information measurement of morphology information, optical information and the like.

A method for scanning near-field optical microscopy comprises illuminating an apertureless atomic force microscopy (AFM) probe with electromagnetic energy having a frequency in the Terahertz range, where the sample under observation includes a dielectric layer having a thickness greater than the radius of the tip of the AFM probe. A system for scanning near-field optical microscopy comprises a collimated light source for emitting collimated light, a photoconductive antenna for converting collimated light into electromagnetic energy having a frequency in the Terahertz range, an AFM probe, a sample comprising a dielectric layer, the dielectric layer having a thickness greater than the radius of the probe tip; and a detector configured to detect energy that has interacted with the sample.

The invention relates to a near-field probe optimization method suitable for a terahertz nano-spectrum technology, and the method comprises the steps: employing a customized AFM probe, carrying out the experiment, combining with the analysis of full-wave electromagnetic simulation, and systematically exploring the regulation and control rule of the curvature radius of the tip of the probe on the imaging and wide-spectrum signals of a scattering type scanning near-field optical microscope working at 0.5-1.5 THz. The relation between the curvature radius R of the tip end of the probe and the intensity of the near-field scattering signal is determined and used for optimizing the near-field probe, and the near-field scattering signal with the wide frequency spectrum of 0.5-1.5 THz can be remarkably improved by optimizing the size of the tail end of the tip end of the AFM probe.

The invention discloses a quantitative characterization method for a multi-layer thin film by using a scanning near-field optical microscopy technology, which comprises the following steps: standardization preparation: calibrating experimental parameters of a scanning near-field optical microscope by using a calibration sample with a known structure, then measuring, and measuring a multi-layer thin film sample to be measured by using the calibrated experimental parameters. According to the non-destructive thin film characterization method, nanoscale transverse and longitudinal resolution ratios can be achieved, meanwhile, the non-destructive thin film characterization method has chemical characteristics, the average thickness difference of a single-layer material is 3.46 nm, the average thickness difference of a double-layer material is 4.49 nm, and the thickness of each layer is quantitatively inverted. The method is expected to be used as a lossless and highly-specific method for mapping and chemical characterization of a nanoscale object embedded in a main body material.

The present disclosure relates to the technical field of electric field measurement, and comprises a method and apparatus for direct quantitative measurement of near-field electric field intensity, and a storage medium. The method comprises: controlling a tip of a scattering type scanning near-field optical microscope to move above a test point on the surface of a sample to be measured and in a first direction perpendicular to the surface of said sample, so as to obtain a first measurement result corresponding to each movement position; determining a first trend curve and a second trend curve on the basis of the first measurement result; determining a vibration equilibrium position of the tip on the basis of the first trend curve; determining shape parameters of an equivalent geometric shape of the tip on the basis of the second trend curve; controlling the tip to move in a second direction parallel to the surface of said sample to obtain a second measurement result; and determining the near-field electric field intensity of the surface of said sample on the basis of the second measurement result, the shape parameters, the vibration equilibrium position, and an electric field intensity measurement model. The near-field electric field intensity distribution on the surfaces of samples to be measured can be directly obtained, thereby achieving electric field intensity comparison between two scanning results.

Scattering-type scanning near-field optical microscope (sSNOM) which comprises: a sample holder configured to hold a sample. The sample holder and the scanning probe tip are adjustable relative to each other in the x-, y-directions by means of a horizontal scanning device, wherein the horizontal scanning device is configured to move the sample located on the top side of the sample holder in the x- and y-directions relative to the scanning probe tip, wherein a plurality of frames is scanned subsequently, each frame representing the scan area of the sample at a specific time interval, and each frame comprising pixels arranged in lines and columns in the x- and y-directions, wherein for each pixel a measurement of phase and / or amplitude is made, and wherein the horizontal scanning device is configured to move the sample along the lines of each frame with a predetermined frequency.