Method for measuring cavity surface temperature of semiconductor laser
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
- Publication Date
- 2010-10-20
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Abstract
Description
technical field
[0001] The invention relates to a method for measuring the cavity surface temperature of a semiconductor laser, which has the characteristics of simple and convenient measurement of the cavity surface temperature of the semiconductor laser, and belongs to the technical field of semiconductor devices. Background technique
[0002] Semiconductor lasers are widely used in commercial, industrial, medical, military and other fields, and their main advantages are small size, long life, good stability, high energy efficiency, and low cost. In recent years, with the development of industry, medical treatment and military affairs, the requirements for the output power of lasers have been continuously improved. For high-power semiconductor lasers, the optical load and heat load on the laser cavity surface are very large, which causes the laser cavity surface to degrade and affects the performance and life of the laser. Therefore, studying the temperature characteristic...