Method for measuring cavity surface temperature of semiconductor laser

Abstract

The invention relates to a method for measuring cavity surface temperature of a semiconductor laser by using a scanning near-field optical microscope, which comprises the following steps of: installing the semiconductor laser on a heat sink, and leading out an electrode; testing parameters of the semiconductor laser; fixing the heat sink on a sample test table of the scanning near-field optical microscope; connecting an electrode with a current output end of a current output device; placing a probe of the scanning near-field optical microscope above a light emergent cavity surface of the semiconductor laser; enabling the semiconductor laser to be close to the probe of the scanning near-field optical microscope to be in a non-contact working state; determining the scanning range of an active region including the semiconductor laser according to the characteristic dimension of the semiconductor laser; scanning to obtain a feature image under the condition of no current injection; injecting a constant current to obtain a feature image and a near field light spot image of the light emergent cavity surface of the semiconductor laser; comparing the feature images before and after the current is injected, calculating the difference value of the feature change; and calculating corresponding temperature change according to coefficients of thermal expansion of various materials in the semiconductor laser.

Description

technical field [0001] The invention relates to a method for measuring the cavity surface temperature of a semiconductor laser, which has the characteristics of simple and convenient measurement of the cavity surface temperature of the semiconductor laser, and belongs to the technical field of semiconductor devices. Background technique [0002] Semiconductor lasers are widely used in commercial, industrial, medical, military and other fields, and their main advantages are small size, long life, good stability, high energy efficiency, and low cost. In recent years, with the development of industry, medical treatment and military affairs, the requirements for the output power of lasers have been continuously improved. For high-power semiconductor lasers, the optical load and heat load on the laser cavity surface are very large, which causes the laser cavity surface to degrade and affects the performance and life of the laser. Therefore, studying the temperature characteristic...

AI Technical Summary

Problems solved by technology

[0003] As an active device, a semiconductor laser needs to meet several conditions for its temperature measurement in its working state: First, it needs to use non-contact measurement. If the laser cavity surface is damaged, it will directly affect the performance of the laser, thus affecting Actual detection effect

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