Segmented modulation structure, laser and manufacturing method thereof

Abstract

The invention provides a segmented modulation structure, a laser and a manufacturing method thereof, and relates to the technical field of semiconductors and communication. The segmented modulation structure comprises an epitaxial substrate and a segmented P-face electrode manufactured on the epitaxial substrate. The segmented P-face electrode comprises a first electrode and a second electrode which are arranged at an interval, and an area between the first electrode and the epitaxial substrate is a DC modulation area; the first electrode is used for the input of a constant direct current, andan area between the second electrode and the epitaxial substrate is an AC modulation area; and the second electrode is used for the input of a signal AC modulation current. Thus, the volume of the ACmodulation cavity can be reduced, the modulation bandwidth is improved, and high-speed modulation is realized so as to be suitable for high-speed transmission. Meanwhile, the difference between a 0 signal current and a 1 signal current of the modulation region is reduced, and the chirp of the optical frequency can be reduced, so that the dispersion of an optical signal in an optical fiber transmission process is smaller, the requirement of long-distance communication can be met, the process is simple, and the manufacturing yield is high.

Description

technical field [0001] The present application relates to the technical field of semiconductor and communication, in particular, to a segmented modulation structure, a laser and a manufacturing method thereof. Background technique [0002] The traditional Directly Modulated Laser (DML for short) is widely used in low-speed communication due to its advantages of high photoelectric conversion rate, low power consumption, and low cost. But in high-speed communication applications, the modulation bandwidth of DML is limited by its physical structure, it is not suitable for high-speed modulation, and the modulation speed is difficult to exceed 28Gbps. At the same time, the modulation chirp of DML is relatively large, so it is difficult to apply to medium and long-distance communication transmission over 20 kilometers. Therefore, currently, electroabsorption modulated distributed feedback lasers (EML for short) are mainly used in high-speed, medium- and long-distance communicatio...

AI Technical Summary

Problems solved by technology

However, the EML process is complicated and difficult, which greatly affects the EML manufacturing yield and makes the EML manufacturing cost higher

At the same time, the power consumption required by EML in use is also much higher than that of DML

[0003] Based on the above reasons, for 5G applications, lasers are required to be suitable for higher transmission speeds and low cost, while EML's complex process and high power consumption are not suitable for 5G application scenarios.

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