259results about How to "Improve photoelectric efficiency" patented technology

Disclosed herein are a novel dye for a photoelectric device and a photoelectric device comprising the dye. More particularly, the dye for a photoelectric device incorporates different quaternary ammoniums into a carboxyl or phosphoric acid-substituted bipyridyl ligand of the dye, and a photoelectric device comprising the same. The dye for a photoelectric device as disclosed herein exhibits improved photosensitivity and light absorbing characteristics, thereby making it possible to fabricate a highly efficient photoelectric device when the dye is included in the device.

The present embodiments relate to a dye for a dye-sensitized solar cell and a dye-sensitized solar cell prepared from the same. The dye includes a fluorenyl-containing compound. The dye according to the present embodiments is applied to a light absorption layer to improve photovoltaic efficiency and increase an open-circuit voltage.

The invention relates to a crystal material with a bigger size, which is manufactured by using a seed crystal induction vertical directional solidification casting method, in particular to a polycrystal or monocrystal material suitable for photoelectric application, such as silicon or silicon germanium. A traditional seed crystal used for casting a silicon crystal has a bigger size and higher consumption, thus, the invention provides a seed crystal with a smaller size and lower consumption, a method of casting a polycrystal or a monocrystal with the bigger size by using the seed crystal and the directional solidification method, the crystal material obtained by adopting the method, including a semiconductor crystal, and an application of the seed crystal in manufacturing semiconductor devices.

The invention discloses a method for preparing a sensitized ZnO nano-plate photo-anode of a PbS quantum dot, comprising the following steps: preparing ZnO nano-plates on fluorine-doped SnO2 conducting glass by using an electro-deposition method; soaking the prepared ZnO nano-plates in 0.1-0.15M of Pb (NO3)2 solution, deionized water, 0.1-0.15M of Na2S solution and the deionized water in sequence for 40s, 20s, 10s and 40s respectively to finish one cycle; and washing for 3 times by the deionized water after circulating and soaking for 8-15 times, and drying to obtain the ZnO nano-plate photo-anode. The method for preparing a sensitized ZnO nano-plate photo-anode of a PbS quantum dot has the advantages of simple equipment, fewer synthesized steps and low energy consumption, is,simple in operation, and is suitable for large-scale production; and meanwhile, the sensitized ZnO nano-plate photo-anode of the PbS quantum dot prepared by the method has large adsorption space, can be further sensitized by utilizing other semiconductor quantum dots, and has good photoelectric properties.

The invention relates to a solar photoelectric photo-thermal integrated assembly and a solar combined heat and power generation system of the solar photoelectric photo-thermal integrated assembly. The solar photoelectric photo-thermal integrated assembly is characterized by comprising a photovoltaic cell panel provided with a metal outer frame, a metal sheet type heat exchanger and a heat-preservation material layer, wherein the metal sheet type heat exchanger and the heat-preservation material layer are sequentially arranged on the back surface of the photovoltaic cell panel in parallel and in an overlapped mode, and are rapidly fixed in the metal outer frame of the photovoltaic cell panel through a metal fixing clamp, and the standard photovoltaic cell panel can be rapidly modified into the photoelectric photo-thermal integrated assembly. The photoelectric photo-thermal integrated assembly has the advantages of being compact in structure, high in efficiency, small in pressure loss, light in weight, flexible to install, high in pressure bearing performance, resistant to corrosion, low in cost and the like, further reduces the initial investment and installation space of a medium and low temperature solar thermoelectric system, lowers the operation expenses of the system, and is suitable for civil and industrial occasions requiring for both heat and power.

The invention relates to solar cell positive silver paste suitable for high-temperature sintering. The paste comprises, by weight, 70-90% of silver powder, 1-3% of glass powder, 5-15% of solvent, 3-10% of organic binding agents and 0.01-2% of sintering accelerant, wherein the silver powder is of a spherical shape, the particle size of the silver powder is not larger than 5 micrometers, and the preference particle size of the silver powder is 1-3 micrometers. Compared with the prior art, an elementary substance containing rhodium or ruthenium or iridium or compounds containing rhodium or ruthenium or iridium serve as the sintering accelerant, the sintering accelerant can effectively restrain excessive sintering of the silver powder at a high temperature, crystalline of silver is prevented from being diffused to a junction area, generation of branch junctions is prevented, and the rate of finished products of battery pieces is increased. The sintering temperature of the paste is 800-900 DEG C, taking the 15 micrometers sintering thickness as an example, electric conductivity of the positive silver paste is 2m*omega/sq, the positive silver paste has excellent weldability, and adhesive force between a (2*2mm<2>) silver layer and a silicon substrate can reach more than 3N.

The invention relates to an EVA (Ethylene Vinyl Acetate) film and a preparation method thereof. The purpose of the invention is to provide the film having higher transmittance and high stability. The technical proposal adopted is as follows: the EVA film for packaging a high-transmittance solar cell comprises an ethylene-vinylacetate copolymer, wherein the EVA film comprises the following components according to part by weight: 100 parts by weight of ethylene-vinylacetate copolymer, 0.1-6 parts by weight of cross-linking curing agent, 0.05-5 parts by weight of nucleating transparent agent, 0.02-3 parts by weight of light stability, 0.05-5 parts by weight of antioxidant and 0.01-4.0 parts by weight of tackifier. The preparation method comprises the following steps of: (1) mixing the nucleating transparent agent with the tackifir; (2) evenly mixing the light stability with the antioxidant; (3) evenly mixing the cross-linking curing agent with the ethylene-vinylacetate copolymer particles; and (4) adding the mixtures obtained in the steps (1) and (2) to the mixture obtained in the step (3), and evenly mixing the mixtures together and then performing blending extrusion.

A dye for a dye sensitized photovoltaic cell is disclosed. A dye sensitized photovoltaic cell including the dye is also disclosed. The dye includes a metal composite treated with a cation selected from imidazolium cations, pyridinium cations, pyrrolidinium cations, and quinolidinium cations.

The invention generally relates to a vertical directional solidification casting method using a crystal selection process, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the crystal selection process is used for producing the crystal with a bigger size, the problems that the crystal selection effect is bad, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.

A photoelectric conversion element having a photoelectric conversion layer between opposing anode electrode and cathode electrode, the photoelectric conversion layer having a structure in which (1) a p-type semiconductor layer and (2) a layer mixing a p-type semiconductor with an n-type semiconductor, and, as required, (3) an n-type semiconductor layer or a metal oxide layer are sequentially layered, characterized in that at least one photoelectric conversion efficiency improving means out of the following (a)-(c) is used. (a) An organic semiconductor thin film with a charge mobility of at least 0.005 cm²/V·sec being used as at least one semiconductor layer in (1)-(3). (b) The energy gap between the work function of the anode electrode and the HOMO (highest occupied molecular orbit) of the p-type semiconductor layer in (1) and/or the energy gap between the work function of the cathode electrode and the LUMO (lowest unoccupied molecular orbit) of the n-type semiconductor layer in (3) being up to 0.5 eV. (c) A buffer layer formed of an organic compound being provided between the anode electrode and/or the cathode electrode and the photoelectric conversion layer to chemically bond the organic compound of the buffer layer with the anode electrode and/or the cathode electrode.

The invention belongs to the field of solar cell making process, in particular relates to a solar cell making process capable blocking edge diffusion by using masks. In the process, silicon dioxide or silicon nitride masks are prepared around the edge of a silicon chip before the silicon chip is diffused; the mask on a front edge is diffused, so that PN nodes are not formed around the edge of the silicon chip in a diffusing process; and PN nodes on the front side and the back side of the silicon chip are isolated, so that the problem of short circuit of upper and lower electrodes of the silicon chip is solved radically and the photoelectric efficiency of a solar cell can be improved effectively. Therefore, the process is suitable for industrial production.

The invention relates to a preparation method for an LED perpendicular structure. With a substrate or a substrate with a low-temperature GaN buffer layer as the growth foundation, U-GaN and all other layers of epitaxy sequentially grow, and the growth of an LED epitaxial wafer is completed. The method includes the steps of firstly, conducting wet etching till the surface of the growth foundation after the growth of the U-GaN layer is completed; secondly, continuing to grow U-GaN, and then sequentially growing the other layers of epitaxy on the surface of the U-GaN so as to obtain the LED epitaxial wafer, wherein the new U-GaN can directly grow on the etched U-GaN, and an inverted pyramid structure is left on the U-GaN on the surface of the growth foundation; thirdly, obtaining the LED perpendicular structure through the LED epitaxial wafer, wherein deposition is conducted on the surface of the LED epitaxial wafer to form a reflection mirror, one metal electrode pattern is manufactured, the surface of the metal electrode pattern is bonded on a metal base plate through the high-temperature metal bonding process, the substrate is stripped through the normal-temperature ultrasonic technology, and the other metal electrode pattern is manufactured on the surface of the U-GaN. By means of the preparation method, cost can be effectively reduced, and efficiency can be effectively improved.

The invention relates to a method for preparing anti-reflecting glass by an acid corrosion method from a Na2O-CaO-SiO2 system glass matrix. The method aims to reduce the surface reflectivity of glass for photovoltaic purpose, photo-thermal purpose, buildings greenhouses and decoration purpose and increase the transmissivity of the glass, thereby increasing solar utilization rate, improving photoelectric or photo-thermal conversion efficiency, enhancing vision sharpness and reducing light pollution. The purposes of the method are achieved by the following technical scheme: firstly, the glass matrix is put in a corrosion tank holding acidic solution and corroded in the corrosion tank; and after being taken out and cleaned, the glass matrix is put in a drying oven to be dried, thus the anti-reflecting glass is obtained. The method has the benefits that the cost is low, and the glass is good in anti-reflecting performance and high in transmissivity; and the transmissivity of the glass to the visible light can reach 97%.

The invention relates to a photovoltaic photo-thermal coupling heliostat mirror face structure with the adjustable reflection area and a heliostat. The mirror face structure comprises a driving motor,a mirror face driving wheel, a mirror face driven wheel, a mirror face transmission belt, a flexible reflecting surface and a flexible photovoltaic panel. The mirror face driving wheel is in driven connection with the driving motor, and the flexible reflecting surface and the flexible photovoltaic panel are attached to the outer surface of the mirror face transmission belt. According to the photovoltaic photo-thermal coupling heliostat mirror face structure, the proportion of the flexible reflecting surface to the flexible photovoltaic panel on the upper surface of the heliostat is adjusted through driving of the mirror face driving wheel so that the reflection area of the heliostat can be adjusted, the reflection areas of all heliostats can be dynamically adjusted in real time at different stages of the mirror field operation according to the mirror field energy requirement, and a part outside a reflector of the mirror face of the heliostat is used for conducting photovoltaic power generation. The heliostat mirror face with the structure is adopted, the requirement for mirror field energy scheduling can be met quickly and efficiently, the problem of abandoned light in the mirrorfield can be fundamentally solved, the photoelectric conversion efficiency of a power station is improved, and then the economic benefits of the power station are improved.

The invention belongs to the field of solar cells and specifically discloses a method for preparing a novel inorganic hole transport layer material and application thereof. The application of the application of a MnS material as a hole transport layer material. The preparation method comprises the steps of setting parameters by using a vacuum coating machine with MnS powder as a source material such that the density of the material is 3.99 g/cm3, the Z factor is 0.94, performing evaporation under a vacuum environment with the evaporation rate 0.5 to 1.0 A/S to obtain a MnS layer by deposition.According to the invention, the MnS material is applied as the novel inorganic hole transport layer material, an environment-friendly inorganic hole transport layer material is obtained, the materialis applied to a device such as a perovskite solar cell device, while high photoelectric conversion efficiency can be ensured, the stability of a solar cell is greatly improved, and a compact MnS filmwith uniform nanoparticles is prepared by vacuum evaporation method for the first time by improving parameters and conditions used in the evaporation process.

The invention provides a high-luminous-efficiency ultraviolet LED epitaxial structure. The high-luminous-efficiency ultraviolet LED epitaxial structure comprises a stress control layer, an n-type current expansion layer, an active region light-emitting layer, an electron blocking layer and a p-type current expansion layer which sequentially grow on the surface of a growth substrate, wherein the electron blocking layer is of a periodic structure formed by an ScaAl1-aN layer and a GaN layer, and 0.15 < a < 0.20. In an ScAlN/GaN short-period superlattice (a periodic structure formed by a ScaAl1-aN layer and a GaN layer), , a very thin ScAlN layer can generate a very large spontaneous polarization electric field to enable the energy band of the GaN layer to be bent enough. The activation energy of Mg is reduced. High-concentration holes are obtained, and the photoelectric efficiency of the LED is effectively improved.

The invention relates to a 3D chrysanthemum-like Z type Bi2S3@CoO heterojunction composite catalyst as well as a preparation method and application thereof. The preparation method of the 3D chrysanthemum-like Z type Bi2S3@CoO heterojunction composite catalyst comprises the following steps: adding CoO and Bi(NO3)3 into redistilled water, continuously stirring, dropwise adding a Na2S aqueous solution, stirring and reacting, then centrifuging and taking a solid product, repeatedly washing the solid product with redistilled water until the solid product is neutral, drying the solid product, then putting the product into a tubular furnace, and calcining for 2 hours under 250 DEG C to obtain a target product. The degradation rate on tetracycline of Bi2S3@CoO can reach up to 90%, and the degradation rate on aureomycin of Bi2S3@CoO can reach over 70%; the preparation method is simple, convenient and efficient and is low in cost; the prepared composite material has the characteristics of narrowband gap, large specific surface area and high catalytic activity, is excellent in visible light absorption performance, excellent in stability, high in photoelectric efficiency and excellent in photoelectrocatalysis degradation effect on organic matters, and can be applied to the fields of photoelectrocatalysis degradation organic matters and sensors.

The semiconductor photoelectrode of the present invention includes a metallic substrate having irregularities in a surface and a semiconductor layer which is formed on the surface of the metallic substrate and composed of a photocatalytic material. This can increase the light absorption efficiency and, furthermore, prevent recombination of charges.