Solar cell making process capable of blocking edge diffusion by using masks

A technology of solar cells and edge diffusion, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve problems such as the loss of photoelectric efficiency of cells, achieve the effects of improving photoelectric efficiency, process stability, and simplifying operations

Inactive Publication Date: 2010-11-10
山东力诺太阳能电力股份有限公司
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] To solve these problems fundamentally, it is necessary to take certain measures before the diffusion, to prevent the connection of the front and back diffusion layers of the cell, and to avoid the short circuit of the upper and lower electrodes, which will cause loss to the photoelectric efficiency of the cell.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Depositing a silicon nitride mask on the edge of a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD)

[0025] After the texturing process, 400 silicon wafers are stacked in parallel, the front and back sides are fixed with aluminum plates, the cells are clamped, and the plasma-enhanced chemical vapor deposition (PECVD) is used to make nitrides around the edges of the silicon wafers. Silicon mask, the mask thickness is 80nm, and then enter the diffusion device for diffusion. After the diffusion, use 5% HF solution to clean the silicon wafer for 2 minutes to remove phosphosilicate glass (PSG). The mask around the edge does not need to be treated , and then go through steps such as anti-reflection coating on the front of the silicon wafer, screen printing, etc., and then detect and sort to obtain the finished battery sheet.

Embodiment 2

[0027] Depositing a silicon dioxide mask on the wafer edge using plasma enhanced chemical vapor deposition (PECVD)

[0028] After the texturing step is over, 400 silicon wafers are stacked in parallel, the front and back sides are fixed with aluminum plates, the cells are clamped, and plasma-enhanced chemical vapor deposition (PECVD) is used to make carbon dioxide around the edges of the silicon wafers. Silicon mask, the mask thickness is 120nm, and then enter the diffusion device for diffusion. After the diffusion, use 5% HF solution to clean the silicon wafer for 2 minutes to remove phosphosilicate glass (PSG). The mask around the edge does not need to be treated , and then go through steps such as anti-reflection coating on the front of the silicon wafer, screen printing, etc., and then detect and sort to obtain the finished battery sheet.

Embodiment 3

[0030] Oxidation method is used to grow silicon dioxide mask on the edge of silicon wafer

[0031] After the texturing step is completed, 400 silicon wafers are stacked in parallel, the front and back sides are fixed with polytetrafluoroethylene plates, the cells are clamped, and placed in an oxidation furnace. Oxygen passing through the deionized water, the oxygen flow rate is 1.6L / Min, so that a silicon dioxide film of 120nm is grown around the edge of the silicon wafer. Then enter the diffusion device for diffusion. After the diffusion, use 5% HF solution to clean the silicon wafer for 2 minutes to remove phosphosilicate glass (PSG). After steps such as membrane and screen printing, testing and sorting are performed to obtain finished battery sheets.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the field of solar cell making process, in particular relates to a solar cell making process capable blocking edge diffusion by using masks. In the process, silicon dioxide or silicon nitride masks are prepared around the edge of a silicon chip before the silicon chip is diffused; the mask on a front edge is diffused, so that PN nodes are not formed around the edge of the silicon chip in a diffusing process; and PN nodes on the front side and the back side of the silicon chip are isolated, so that the problem of short circuit of upper and lower electrodes of the silicon chip is solved radically and the photoelectric efficiency of a solar cell can be improved effectively. Therefore, the process is suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of solar cell production technology, in particular to a solar cell production process for blocking edge diffusion by a mask. Background technique [0002] The traditional manufacturing process of solar cells is roughly divided into several steps such as texturing, diffusion, etching, dephosphorous silicon glass, anti-reflection coating, and screen printing. [0003] In the existing process of diffusing solar cells, a diffusion layer, ie, a PN junction, is inevitably formed around the silicon wafer. The surrounding PN junction makes the upper and lower electrodes of the battery form a short circuit. Any small local short circuit on the periphery will reduce the parallel resistance of the battery, increase the reverse current, and reduce the overall electrical performance of the solar cell. The surrounding PN junction must be removed to make the solar cell The cells are working normally. [0004] At present, the edge ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 姜言森刘鹏李玉花杨青天焦云峰任现坤孙晨曦
Owner 山东力诺太阳能电力股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap