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Method for preparing N type battery by using insulating edge protective layer

A technology of insulating edge and protective layer, which is applied in the field of solar cells, can solve the problems affecting the overall efficiency of the cell, edge plating leakage, short circuit, etc., and achieve the effect of improving photoelectric efficiency, preventing the short circuit of the upper and lower electrodes of the silicon chip, and simple operation

Active Publication Date: 2020-12-29
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the current N-type PERT and Topcon preparation process, in the process of boron expansion and phosphorus expansion or phosphorus ion implantation, it is difficult to solve the problem of edge plating leakage, which ultimately affects the overall efficiency of the cell
In the present invention, the dielectric layer film prepared by using glass powder is uniformly applied on the edge after phosphorus washing, and then advanced by the high temperature of diffusion to protect the edge, isolate the edge, and then use HF to peel off. This method realizes the edge insulation of the cell The effect of protection will not have adverse effects on the battery sheet, can effectively solve problems such as edge short circuits, and improve the photoelectric efficiency of the battery

Method used

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  • Method for preparing N type battery by using insulating edge protective layer
  • Method for preparing N type battery by using insulating edge protective layer
  • Method for preparing N type battery by using insulating edge protective layer

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Embodiment 1

[0029] Wherein as preferably, the concrete operation condition of embodiment 1 efficient N-type TOPCon battery is:

[0030] (1) Cleaning and texturing treatment: select an N-type crystalline silicon substrate, remove metal ions on the N-type silicon wafer, and perform surface texturing and other treatments;

[0031] (2) Front boron diffusion: place the silicon wafer treated in step (1) in the furnace tube for boron diffusion, and the boron source used can be liquid BBr 3 Also gaseous BCl 3 , the diffusion temperature is 800~1200℃, and the diffusion time is 2h;

[0032] (3) Remove BSG: Put the silicon wafer after step (2) into the BSG removal equipment for back throwing and BSG removal treatment, wherein the solution used for back throwing is HCl / HNO 3 or NH 3 ﹒ h 2 O / H 2 o 2 Or one of the combinations of KOH / additive is used for back throwing, and 15% HF is used to remove the BSG layer on the surface.

[0033] (4) Apply the dielectric film evenly on the edge of the sil...

Embodiment 2

[0043] Embodiment 2 (wherein unrestricted condition is identical with embodiment 1)

[0044] (1) Select N-type monocrystalline silicon wafers, after cleaning, texturing, boron diffusion, and phosphorus washing;

[0045] (2) Apply the dielectric film evenly on the edge of the silicon wafer by using the roller transmission device;

[0046] The dielectric layer film is evenly applied to the edge of the silicon wafer by using a roller transmission device. The equipment used can uniformly apply the dielectric layer to a thickness of 3mm. The material of the dielectric layer is mainly glass powder and additives. The glass powder contains 90% by mass of glass powder and 10% by mass of ceramic powder, wherein: the glass powder is composed of the following components, calculated by mass percentage, 10% BaO, 25% ZnO, 30% B 2 o 3 , 30% SiO 2 , 3.5% Li 2 O and 1.5% Al 2 o 3 ; The ceramic powder is obtained by mixing alumina, zirconia, tin oxide and zinc oxide in equal mass ratios. ...

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Abstract

The invention discloses a method for preparing an N type battery by using an insulating edge protection layer. The method comprises the following specific steps: (1) selecting an N type monocrystalline silicon wafer, cleaning, texturing, carrying out boron diffusion, and removing BSG; (2) uniformly smearing the edge of the silicon wafer with a dielectric layer film by using a roller transmission device; (3) carrying out micro-sintering on the dielectric layer and the silicon wafer by utilizing high temperature before phosphorus diffusion by utilizing diffusion or LPCVD deposition of polycrystalline silicon; (4) degumming, wherein the insulated dielectric layer and phosphorus deposited on the dielectric layer are stripped by using HF; (5) after the PSG layer is removed through RCA or the polycrystalline silicon layer is subjected to winding plating, carrying out AlOx and SiNx passivation on the front face, and carrying out SiNX passivation on the back face; and (6) printing silver pasteon the front face, and then sintering. The method can effectively solve the problem of edge electric leakage of the N type silicon wafer.

Description

technical field [0001] The invention provides a method for solving edge leakage in the process of preparing an N-type battery by using an insulating material, and the invention relates to the technical field of solar cells. Background technique [0002] With the rapid development of the photovoltaic industry, the market urgently needs a solar cell industrialization preparation technology with simple process flow and high photoelectric conversion efficiency to reduce the cost of photovoltaic power generation, so that the cost of photovoltaic power generation can be equal to or lower than the price of mains electricity. The goal. P-type PERC has only one diffusion process for phosphorus diffusion, so when removing phosphorus plating and leakage, the phosphorus washing step can be completed at the same time. However, as the cost of N-type silicon wafers gradually decreased, the efficiency of N-type silicon wafers such as Topcon cells reached 23.5%, and the N-type market was gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/068Y02E10/547Y02E10/546Y02P70/50
Inventor 刘阳吴家宏张凯胜孙铁囤姚伟忠胡琴尹伟平
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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