Preparation method of visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode

A thin-film electrode and heterojunction technology, applied in the field of nanomaterials, can solve the problems of low cost-effectiveness, slow generation, decreased electrode charge transport performance, etc., and achieve high photoelectric efficiency and good effect.

Active Publication Date: 2017-05-31
SHANGHAI JIAO TONG UNIV
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  • Abstract
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Problems solved by technology

[0007] Although this method can be used to prepare BiVO on various substrate surfaces 4 layer, but during preparation, WO 3 The film undergoes repeated heating-cooling processes, which will lead to WO 3 Severe stress changes occur repeatedly inside the film, which damages the internal structure of the substrate and increases the WO 3 / BiVO 4 WO in heterojunction films 3 Structural defects of the substrate, so there are deficiencies that lead to a decrease in the charge transport performance of the electrode
In addition, the precursor solution containing bismuth nitrate and ammonium metavanadate will slowly generate BiVO 4 Precipitation, so there is still the disadvantage of low cost-effectiveness

Method used

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  • Preparation method of visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode
  • Preparation method of visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode
  • Preparation method of visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode

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preparation example Construction

[0032] see first figure 1 ,figure 1 is the visible light responsive WO described in the present invention 3 / BiVO 4 Schematic diagram of the preparation process of the heterojunction thin film electrode, the visible light responsive WO of the present invention 3 / BiVO 4 The preparation method of the heterojunction thin film electrode is through the WO 3 The surface of the film was alternately spin-coated with bismuth nitrate solution and peroxovanadate solution, using bismuth nitrate and peroxovanadate solution in WO 3 The surface of the film is directly reacted to obtain bismuth peroxovanadate, and finally the film is sintered at one time to obtain the WO 3 / BiVO 4 Heterojunction thin film electrodes. Specifically include the following steps:

[0033] 1~3g Bi(NO 3 ) 3 ·5H 2 O is dissolved in 100 mL of 2 mol / L acetic acid aqueous solution to obtain a bismuth nitrate solution, and 0.2-1 g of NH 4 VO 3 Dissolved in 100mL of 50~200mmol / L H 2 O 2 The peroxovanadate s...

Embodiment 1

[0037] WO was first prepared by chemical bath method in the prior art 3 Nanosheet films (Zhou Baoxue et al., a WO 3 Preparation method and application of nanosheet array thin film, Chinese patent application number: 201510724443.X): containing 0.4gNa 2 WO 4 ·2H 2 O, 0.15g ammonium oxalate, 9mL 37% hydrochloric acid, 8mL 37% H 2 O 2 and 30 mL of ethanol in 30 mL of deionized aqueous solution, the tungstic acid film was obtained on a conductive glass substrate in a water bath at 85 °C for 200 min, and then heat-treated at 500 °C for 2 h after WO 3 Nanosheet films.

[0038] 2.4gBi (NO 3 ) 3 ·5H 2 O was dissolved in 100 mL of 2 mol / L acetic acid aqueous solution to obtain a bismuth nitrate solution, and 0.58 g of NH 4 VO 3 Dissolved in 100mL of 100mmol / L H 2 O 2 The peroxovanadate solution is obtained in the aqueous solution, and then the bismuth nitrate solution is spin-coated on the above-mentioned WO 3 The surface of the nanosheet film, and then spin-coated the per...

Embodiment 2

[0044] First use the prior art anodizing method to prepare WO 3 Nanoporous film (J.Solid State Electrochem. 2014, 18, 157-161): In an aqueous solution containing 0.1 M sodium sulfate and 0.5% HF, at 35 °C, the tungsten sheet was anodized at a voltage of 50 V for 30 min. WO was obtained after heat treatment at 500 °C for 2 h 3 Nanoporous films.

[0045] 1g Bi (NO 3 ) 3 ·5H 2 O was dissolved in 100 mL of 2 mol / L acetic acid aqueous solution to obtain a bismuth nitrate solution, and 0.2 g of NH 4 VO 3 Dissolved in 100mL of 50mmol / L H 2 O 2 The peroxovanadate solution is obtained in the aqueous solution, and then the bismuth nitrate solution is spin-coated on the obtained WO 3 The surface of the nanoporous film, and then spin-coated peroxovanadate solution on the obtained WO 3 On the surface of the nanoporous film, after repeating the spin coating process 20 times, the obtained film was heat-treated at 400 °C for 6 hours at a time, and then naturally cooled to obtain WO ...

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Abstract

The invention discloses a preparation method of a visible-light response tungsten trioxide-bismuth vanadate heterojunction thin film electrode. The preparation method comprises the following steps: dissolving 1-3g of Bi(NO3)3.5H2O in 100mL of 2mol / L acetic acid aqueous solution to obtain a bismuth nitrate solution; dissolving 0.2-1g of NH4VO3 in 100mL of 50-200mmol / L H2O2 aqueous solution to obtain a peroxy-vanadic acid solution; spinning the bismuth nitrate solution on the surface of a WO3 film, and spinning the peroxy-vanadic acid solution on the surface of the WO3 film; repeating the spinning processes for 5-20 times; performing heat treatment on the obtained film once for 1-6 hours at 400-550 DEG C; and naturally cooling to obtain the WO3 / BiVO4 heterojunction thin film electrode. The method disclosed by the invention has the characteristics of simplicity, mildness and high efficiency; and the prepared WO3 / BiVO4 heterojunction thin film electrode has the advantages of good visible light absorbability and stability, high photoelectric efficiency and good photoelectrocatalytic degradation effect of organisms, and can be applied to the fields such as photoelectrocatalytic hydrogen production, organism degradation and sensors.

Description

technical field [0001] The invention relates to a photoelectric catalytic electrode material, in particular to a method for preparing a visible light-responsive tungsten trioxide-bismuth vanadate heterojunction thin film electrode, which belongs to the field of nanomaterials. [0002] technical background [0003] Photocatalytic technology based on sunlight degradation of organic matter, hydrogen production and sensor technology is a promising new technology. In this technology, the performance of the photocatalytic electrode directly affects the effect of the photoelectric catalytic system. Therefore, the preparation of photocatalytic electrode materials is a hot research topic in the field of photoelectric catalysis. [0004] Currently, with BiVO 4 Modified WO 3 WO 3 / BiVO 4 Heterojunction thin films with BiVO-based 4 Excellent visible light absorption performance (can absorb 30% of sunlight) and based on WO 3 Excellent charge transport properties (12cm 2 V -1 s -1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/30C02F1/461C02F1/72C25B1/04C02F101/30
CPCC02F1/30C02F1/46109C02F1/725C02F2001/46138C02F2101/30C25B1/04Y02E60/36Y02W10/37
Inventor 周保学曾庆意白晶李金花乔莉谭晓涵沈照熙李晓燕
Owner SHANGHAI JIAO TONG UNIV
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