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Method for preparing novel inorganic hole transport layer material and application thereof

A technology of hole transport layer and electron transport layer, which is applied in the field of solar cells, can solve the problems of toxicity, unfavorable environmental protection, unfavorable mass production, etc., and achieve the effect of low cost, uniform size, and excellent electrical performance

Active Publication Date: 2019-03-26
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, ternary copper-based transition metal oxides such as CuGaO 2 and CuCrO 2 , also used in perovskite solar cells as HTL, although they have achieved a photoelectric conversion efficiency of more than 18%, they contain toxic and scarce Ga, Cr elements, which are not conducive to environmental protection; and these hole transport layer nanoparticles require Prepared by solution method, not conducive to large-scale production

Method used

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  • Method for preparing novel inorganic hole transport layer material and application thereof
  • Method for preparing novel inorganic hole transport layer material and application thereof
  • Method for preparing novel inorganic hole transport layer material and application thereof

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Embodiment 1

[0044] A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, spin-coat on the FTO substrate with a 15mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate, and the spin-coating parameter is 3500rpm , 25s, followed by annealing at 450°C for 30min to prepare dense TiO 2 ; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin coating parameter is ...

Embodiment 2

[0046]A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, use 10mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate to spin-coat on the FTO substrate, and the spin-coating parameter is 5000rpm , 60s, followed by annealing at 400°C for 20min; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin-coating parameter is 6000rpm, 20s, followed by ...

Embodiment 3

[0048] A kind of preparation method and application thereof of novel inorganic hole transport layer material MnS thin film among the present invention, comprise the following steps: (1) at first FTO substrate is cleaned, first carries out surface dirt to FTO substrate with cleaning liquid, subsequently will Put it into a mixed solution containing deionized water, absolute ethanol, and acetone with a volume ratio of 1:1:1, and perform ultrasonic cleaning for 30 minutes. This process is repeated three times, and then the FTO substrate is placed in a vacuum drying oven at 80°C. Bake for 120min, and finally treat with ultraviolet ozone for 15min; (2) Next, spin-coat on the FTO substrate with a 20mM isopropanol solution of bis(acetylacetonato)diisopropyl titanate, and the spin-coating parameter is 2000rpm , 20s, followed by annealing at 500°C for 60min; (3) in the prepared dense TiO 2 On, spin-coated TiO 2 Slurry (18NR-T Dyesol), spin-coating parameter is 3000rpm, 60s, followed by...

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Abstract

The invention belongs to the field of solar cells and specifically discloses a method for preparing a novel inorganic hole transport layer material and application thereof. The application of the application of a MnS material as a hole transport layer material. The preparation method comprises the steps of setting parameters by using a vacuum coating machine with MnS powder as a source material such that the density of the material is 3.99 g / cm3, the Z factor is 0.94, performing evaporation under a vacuum environment with the evaporation rate 0.5 to 1.0 A / S to obtain a MnS layer by deposition.According to the invention, the MnS material is applied as the novel inorganic hole transport layer material, an environment-friendly inorganic hole transport layer material is obtained, the materialis applied to a device such as a perovskite solar cell device, while high photoelectric conversion efficiency can be ensured, the stability of a solar cell is greatly improved, and a compact MnS filmwith uniform nanoparticles is prepared by vacuum evaporation method for the first time by improving parameters and conditions used in the evaporation process.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and more specifically relates to a preparation method of a novel inorganic hole transport layer material and its application. Suitable for solar cells including perovskite solar cells, etc. Background technique [0002] Taking perovskite solar cells as an example, due to the advantages of suitable direct band gap, high light absorption coefficient and superior carrier bipolar transport performance, the photoelectric conversion efficiency of organic-inorganic hybrid perovskite solar cells is In less than ten years, it has increased nearly 8 times, and now it has reached 22.7%, which is comparable to the current silicon-based solar cells, but there are still some important problems that restrict the commercial application of perovskite solar cells. Hole transport layer (Hole transport layer, hereinafter referred to as HTL) is one of the key factors. In perovskite solar cells, the hole transpo...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/151H10K30/10Y02E10/549
Inventor 杨君友李鑫赖晖李水萍姜庆辉谭尧
Owner HUAZHONG UNIV OF SCI & TECH
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