Preparation method for LED perpendicular structure

Abstract

The invention relates to a preparation method for an LED perpendicular structure. With a substrate or a substrate with a low-temperature GaN buffer layer as the growth foundation, U-GaN and all other layers of epitaxy sequentially grow, and the growth of an LED epitaxial wafer is completed. The method includes the steps of firstly, conducting wet etching till the surface of the growth foundation after the growth of the U-GaN layer is completed; secondly, continuing to grow U-GaN, and then sequentially growing the other layers of epitaxy on the surface of the U-GaN so as to obtain the LED epitaxial wafer, wherein the new U-GaN can directly grow on the etched U-GaN, and an inverted pyramid structure is left on the U-GaN on the surface of the growth foundation; thirdly, obtaining the LED perpendicular structure through the LED epitaxial wafer, wherein deposition is conducted on the surface of the LED epitaxial wafer to form a reflection mirror, one metal electrode pattern is manufactured, the surface of the metal electrode pattern is bonded on a metal base plate through the high-temperature metal bonding process, the substrate is stripped through the normal-temperature ultrasonic technology, and the other metal electrode pattern is manufactured on the surface of the U-GaN. By means of the preparation method, cost can be effectively reduced, and efficiency can be effectively improved.

Description

Technical field: [0001] The invention belongs to the preparation technology of semiconductor devices, and in particular relates to a preparation method of an LED vertical structure. Background technique: [0002] At present, the world has entered the "energy-saving era", and all countries are actively looking for new energy-saving and environmentally friendly industries. The energy consumed by lighting accounts for more than 20% of the total energy consumption. Therefore, reducing lighting power consumption is an important way to save electricity. LED energy-saving lamp is a new generation of solid-state cold light source, which has the characteristics of low energy consumption, long life, easy control, safety and environmental protection, etc. It is an ideal energy-saving and environmental protection product, suitable for various lighting places. However, at present, LEDs have not entered general lighting on a large scale. One of the main reasons is that the cost performanc...

AI Technical Summary

Problems solved by technology

Although laser lift-off technology has become a new research hotspot due to its high efficiency and low damage, there are also some shortcomings that limit large-scale applications, specifically: low yield, high cost, not suitable for large-size substrates, and high precision requirements. lead to the increase of defect loss in the film, and the metallic Ga part generated by laser irradiation combines with the oxygen in the air to form Ga 2 o 3 , making it difficult to post-treat the GaN surface after stripping

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