A kind of preparation method of vertical structure blue LED chip

Abstract

The invention discloses a fabrication method of a vertical-structure blue-light LED chip. The fabrication method comprises the steps of firstly, taking a substrate with a low stress buffer layer as a growth foundation; secondly, sequentially growing other epitaxial layers on a smooth u-GaN surface to obtain a blue-light LED epitaxial wafer; and finally, fabricating a vertical-structure LED from the blue-light LED epitaxial wafer, wherein the step of fabricating the vertical-structure LED mainly comprises the following steps of depositing and forming a reflecting mirror on a surface of the LED epitaxial wafer, fabricating a metal electrode pattern, bonding a surface of the metal electrode pattern on a metal substrate by a high-temperature metal bonding process, stripping the substrate by a laser lift-off technology, and fabricating another metal electrode pattern on the u-GaN surface. The vertical-structure LED fabricated according to the method is relatively high in single-chip power, the quantity of LEDs in series and in parallel is reduced, the user demand can be satisfied by a single chip, meanwhile, a driving circuit design is simplified, the reliability of an LED product is greatly improved, and the service lifetime of the LED product is greatly prolonged.

Description

[0001] 【Technical field】

[0002] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a vertical structure blue LED chip.

[0003] 【Background technique】

[0004] The application of semiconductor lighting has accelerated significantly in recent years, and its effect has been recognized by the market, but its penetration rate in the entire lighting market is still low. The domestic LED lighting application market has not yet become the leading force in industrial development. The semiconductor lighting application market, especially the functional lighting market is in the initial stage of development, with huge future space.

[0005] For traditional front-mounted LED chips, P-type GaN is difficult to dope, resulting in low hole carrier concentration and difficulty in growing thick, resulting in difficult diffusion of current. At present, the method of preparing ultra-thin metal film or ITO film on the surface of P...

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