Method and device for casting crystal material by using crystal selector

A crystal selector and crystal technology, applied in the field of polycrystalline and single crystal materials, to achieve the effects of low cost, high photoelectric efficiency, and high production efficiency

Inactive Publication Date: 2012-01-11
赵钧永
View PDF16 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The specific method is to use the seed crystal induction method. In the VGF, VB or BVS method, a silicon single crystal seed crystal is placed at the bottom of the silicon melt to induce crystal growth. However, many attempts have failed, and none of the crystals obtained polysilicon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for casting crystal material by using crystal selector
  • Method and device for casting crystal material by using crystal selector
  • Method and device for casting crystal material by using crystal selector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0083] figure 1 Show the silicon crystal manufacturing device that adopts the silicon crystal growth process of VGF method, for clearly showing the feature of the present invention, only provide the schematic diagram that comprises crucible 1, crucible supporting device 2 and heating device 3 that comprise crystal selector among the figure, and each Only the relative positions are shown between the parts, and do not represent the real scale. according to figure 1 , The crucible 1 is formed by a quartz crucible, and the middle part of its bottom wall is provided with a spiral crystal selector 11, and the crystal selector is an initial section 111, a crystal selection section (helix) 112 and a single crystal section 113 from bottom to top. The crystal selector is located at the upper opening of the single crystal segment, and is connected to the side wall by the arc-shaped bottom wall 12 recessed into the crucible, which is the gradual transition area of ​​the bottom wall. The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
sizeaaaaaaaaaa
surface areaaaaaaaaaaa
Login to view more

Abstract

The invention generally relates to a vertical directional solidification casting method using a crystal selection process, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the crystal selection process is used for producing the crystal with a bigger size, the problems that the crystal selection effect is bad, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

Description

technical field [0001] The present invention generally relates to the use of vertical solidification casting methods, such as vertical temperature gradient solidification crystal growth method (hereinafter also referred to as VGF method) or vertical Bridgman crystal growth method (hereinafter also referred to as VB method) or vertical Bridgman method. The Stockbag method (VBS method) produces relatively large silicon and silicon germanium crystalline materials, especially polycrystalline and single crystal materials suitable for photovoltaic applications. Background technique [0002] Photovoltaic cells (or photovoltaic cells, solar cells) based on crystalline silicon should have the greatest possible efficiency of converting solar radiation power into electric current, as well as the longest possible service life and decay rate. This is determined by a variety of factors, such as the purity of silicon raw materials, the type of silicon crystal (single crystal, polycrystalli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00
Inventor 赵钧永
Owner 赵钧永
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap