Tungsten trioxide/titanium dioxide nano heterojunction thin film and preparation and application thereof

A tungsten trioxide and titanium dioxide technology, applied in metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problems of serious charge recombination and poor film stability, and achieve suitable The effect of large area preparation
CN105789352AInactive Publication Date: 2016-07-20SHANGHAI JIAO TONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI JIAO TONG UNIV
Publication Date
2016-07-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a tungsten trioxide / titanium dioxide nano heterojunction thin film and a preparation and an application thereof. According to the WO3 / TiO2 nano heterojunction thin film, a nano TiO2 layer is formed on the surface of a WO3 thin film in an epitaxial growth manner on the basis of the double-matching relationship of WO3 and TiO2 energy level matching and lattice matching; and the preparation method comprises the following steps: putting the WO3 thin film into a water solution containing ammonium hexafluorotitanate (10-20mM) and boric acid (50-100mM), and carrying out treatment at a constant temperature of 25-50 DEG C for 1-70 hours; and taking out the thin film, washing the thin film with deionized water for over 1min and carrying out natural drying to obtain the WO3 / TiO2 nano heterojunction thin film. The WO3 / TiO2 nano heterojunction thin film has good visible-light absorption capability, good stability, high photoelectric efficiency and charge transfer efficiency, and can be widely applied to the fields of photocatalysis, photoelectrocatalysis, a photocatalytic wastewater fuel cell, a sensor and the like.
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Description

technical field

[0001] The invention relates to a nano-heterojunction film material, in particular to a tungsten trioxide / titanium dioxide nano-heterojunction film and its preparation and application, belonging to the technical field of nano-materials and applications. technical background

[0002] Tungsten trioxide (WO 3 ) as a relatively cheap n-type semiconductor material, because it has good visible light absorption performance (band gap ~ 2.5-2.7eV, can absorb sunlight with a wavelength of 12%), and good stability under neutral and acidic conditions , non-toxic and other advantages, and has a large hole diffusion distance (~150nm, greater than TiO 2 ~100nm and Fe 2 o 3 ~2-4nm), and widely used in photocatalysis, photocatalysis, photocatalysis waste water fuel cell, COD sensor, pH sensor and gas sensor and other fields. However, WO 3 There are some shortcomings in itself, such as slow charge migration between it and the solution interface, the surface is easily deac...

Claims

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