Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for making optical waveguides

A technology of wave guide and ring resonator, applied in the field of preparing optical wave guide, can solve the problem of high tensile stress value, and achieve the effects of reducing annealing temperature, reducing stress and improving equipment quality

Inactive Publication Date: 2010-12-08
3M INNOVATIVE PROPERTIES CO
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different coefficients of thermal expansion lead to unacceptably high values ​​of tensile stress induced in the layers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making optical waveguides
  • Method for making optical waveguides
  • Method for making optical waveguides

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0034] Example 1: With SiO 2 / SiN Ridge / SiO 2 Interlayer (annealed) ring resonator

[0035] The invention is demonstrated by the fabrication of vertically connected ring resonators with a diameter of 100 μm. The ring resonator was fabricated as follows.

[0036] By plasma enhanced chemical vapor deposition (PEVCD, available from Oxford Instruments, Yatton, UK, model P1asmaLab using the following parameters listed in Table 1 TM system 100), a 3 μm thick lower cladding layer of borophosphosilicate glass (BPSG) with a refractive index of 1.46 was deposited on a 0.5 mm Si wafer (100) (Si wafers can be purchased from Montco Silicon Technologies of Spring City, PA. company) on.

[0037] Table 1. Conditions used to deposit BPSG lower cladding

[0038] Reactants / Conditions:

value:

SiH 4

17 sccm

B 2 h 6

3.5 sccm

pH 3

1.8 sccm

N 2 o

1500 sccm

N 2

600 sccm

RF power

130W

pre...

example 2 and example 3

[0062] Example 2 and Example 3: Fabrication of ridge SiON core layer (patterning; annealing)

[0063] Several Si wafers prepared as described in Comparative Example 2 coated with a 700 nm thick SiON coating were coated with PR and the PR layer was patterned using a waveguide pattern mask and standard photolithographic techniques. Reactive ion etching was performed according to the conditions described in Table 3 to form ridged waveguide cores (100 μm ridges in Example 2; 50 μm ridges in Example 3).

[0064] The SiON core layers of Example 2 and Example 3 were annealed for 30 minutes at temperatures of 600°C, 700°C, 800°C, 900°C and 1000°C in a furnace with a heating and cooling rate of 2°C / min. The SiON core is crack-free when viewed using optical microscopy.

example 4

[0073] Example 4: With SiO 2 / a-Si ridge / SiO 2 Interlayer (annealed) ring resonator

[0074] By plasma enhanced chemical vapor deposition (PEVCD, available from Oxford Instruments in Yatton, UK, model PlasmaLab using the parameters listed in Table 1 TM System 100) of 3 μm thick borophosphosilicate glass (BPSG) lower cladding with a refractive index of 1.46 was deposited on a 0.5 mm Si wafer (100) (Si wafers can be purchased from Montco Silicon Technologies in SpringCity, PA) superior.

[0075] After the BPSG layer was formed on the Si wafer, the sample was heated to 1080° C. in a furnace at a ramp rate of 5° C. / min and kept at that temperature for about 4 hours to allow the BPSG to reflow. After heat treatment, a 250 nm thick amorphous silicon (a-Si) core layer was deposited on the BPSG lower cladding layer by PECVD using the following parameters described in Table 7.

[0076] Table 7. Conditions used to deposit a-Si layer

[0077] Reactants / Condition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
etching depthaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

A method for making a waveguide comprises (a) providing a waveguide structure comprising a substrate (22), a lower cladding (20) layer on the substrate, and a core layer (24) comprising silicon nitride, amorphous silicon, or amorphous silicon-germanium alloy on the lower cladding layer; (b) patterning the core layer; and (c) annealing (28) the waveguide structure.

Description

technical field [0001] The invention relates to a method for producing an optical waveguide. In another aspect, the invention relates to silicon nitride-based and amorphous silicon-based optical waveguides. Background technique [0002] Optical waveguides are commonly used in optical communications applications. Optical waveguides generally include a core layer sandwiched between a lower cladding layer and an upper cladding layer. Typically, the core layer has a higher refractive index than the lower and upper cladding layers. [0003] Traditionally, silicon dioxide is used to form the core and cladding, but the core is doped (eg, with germanium, phosphorus, or titanium) in order to increase its refractive index relative to the cladding. In recent years, more and more attention has been paid to fabricating silicon nitride cores or silicon oxynitride cores grown by plasma-enhanced chemical vapor deposition (PECVD) with a large refractive index difference between the core a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/132
CPCG02B6/132G02B6/1223G02B2006/12097G02B2006/12061B82Y20/00
Inventor 张俊颖特里·L·史密斯巴里·J·科赫易亚沙
Owner 3M INNOVATIVE PROPERTIES CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com