32results about How to "Improve equipment quality" patented technology

A cover for a hand-held device, which has a device body and a speaker, includes a cover body configured for covering a portion the device body and for covering the speaker and a channel for positioning adjacent the device body. The channel is configured to form a sound duct when mounted adjacent the back side of the device body and to be in communication with the speaker when the cover is mounted to the hand-held device for redirecting at least a portion of the sound waves emitted from the speaker to a location remote from the speaker.

A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

A method, device, device management server and system for processing a scheduling task in device management are provided. The method includes: a device management server delivering a scheduling task; a device monitoring an execution condition of the scheduling task; the device reporting information on execution of the task; if the device does not execute the task normally according to the execution condition, the device management server delivering a task, and the device executing an operation according to the instruction; and the device reporting a task execution status. Thus, an effective mechanism for ensuring execution of the scheduling task is provided, so that the uncertainty in device management may be reduced, the flexibility of device management on the mobile phone may be increased, a scheduling demand from the user may be satisfied, and the quality of device management services may be improved.

A method of plasma etching a Si3N4 masked tungsten silicide layer down to an underlying doped polysilicon layer in the gate conductor stack formation process is disclosed. The method is performed in a plasma etcher and the etching mixture contains C12, HCl and O2 wherein the C12/HCl ratio is approximately equal to 4.7 and the oxygen flow varies between 20 and 30 sccm, 25 sccm being the optimal value. A slight overetching of the underlying doped polysilicon layer with this mixture is recommended. The etching method of the present invention preserves the thickness and integrity of the top Si3N4 masking layer that are essential elements for the successful completion of the remaining steps of the gate conductor stack formation process.

A semiconductor device includes a first insulation film, a second insulation film, a thin film resistor interposed between the insulation films. A predetermined voltage is applied to the thin film resistor so that a current flows through the thin film resistor. When a crack occurs in the insulation films, the thin film resistor is partially destroyed and the resistance of the thin film resistor changes. The crack is detected by measuring the change in resistance of the thin film resistor based on the predetermined voltage and the current flowing through the thin film resistor. Therefore, a crack inspection can be conducted without destruction of the device.

A method for making a waveguide comprises (a) providing a waveguide structure comprising a substrate (22), a lower cladding (20) layer on the substrate, and a core layer (24) comprising silicon nitride, amorphous silicon, or amorphous silicon-germanium alloy on the lower cladding layer; (b) patterning the core layer; and (c) annealing (28) the waveguide structure.

Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching process is implemented onto a predetermined layer formed on the wafer by setting the bias power to a predetermined value. Since by-products generated during preceding etching processes can be readily removed during an etching using plasma, an etching process change due to a difference of pattern densities can be reduced. In addition, a progressive pattern loading generated as the number of processed wafers increase, can be prevented.

An array substrate includes a first electrode located above a switching element through a first insulating film, a second electrode located above the first electrode through a second insulating film, and a connection portion that is located to pass through the first insulating film, first electrode, and second insulating film and electrically connects a drain electrode of the switching element and the second electrode. The connection portion is disposed in an avoidance region provided by carving out a gate line connected to the switching element.

The invention discloses a robot rental support system comprising a robot, a rental point, and a management platform capable of communicating with the robot and the rental point. The robot is able to enter in or exit from a sleep mode and is provided with a positioning module for acquiring position information. The management platform consists of a field division module and a field monitoring module; the field division module is used for dividing a usage range of the robot and providing corresponding field information for the field monitoring module; the field monitoring module connected wit the robot obtains the position information of the robot by the management platform and monitors whether the field information covers the position information. According to the support system, a burgeoning robot terminal can be helped enter the home or institution in a public intelligent device manner, so that people try to introduce the intelligent device like the robot with the good cost performance. Therefore, the development of the robot field is promoted.

The invention relates to a production technique of a roller, which is characterized by comprising the following steps: 1) preparing materials; 2) processing two end surfaces of a blank; 3) processing central holes on the two ends; 4) abutting against the two ends, and carrying out rough turning; 5) drilling a suspension hole beyond the length of the finished product; 6) carrying out quenching and tempering until the hardness of the roller body reaches 40-50 HSD; 7) correcting the central holes on the two ends; 8) abutting against the two ends, and carrying out semi-finish turning; 9) carrying out rough grinding on the roller body; 10) carrying out quenching and tempering until the as-quenched hardness of the roller body surface reaches 88-93 HSD; 11) processing the length between the two ends to the required size; 12) carrying out finish turning; 13) carrying out rough grinding on the roller body and journal; 14) carrying out stress relief treatment; 15) correcting the central holes on the two ends; 16) abutting against the two ends, and carrying out fine grinding on the roller body and journal; 17) abutting against the two ends, and carrying out supergrinding on the roller body and journal to obtain the finished product. The roller prepared from a steel tube material has better toughness, wear resistance, thermoplasticity and the like than the roller prepared from a common material.

The invention discloses an overhead integral refrigerator, which comprises a cold air unit and a refrigerating unit, wherein the refrigerating unit is used for providing refrigerant for the cold air unit, the cold air unit comprises an evaporator, a fan and a heat isolation box body, the evaporator is arranged in the heat isolation box body, the heat isolation box body is arranged at the top part of a cold storage, the bottom part of the heat isolation box body is communicated with the top part of the cold storage, a flow separating plate is arranged at the communicating part, the heat isolation box body is separated into an air return area and an air outlet area by the flow separating plate and the cold air unit, the fan is arranged in the air outlet area and is used for exhausting the air from the air return area to the air outlet area, and the refrigerating unit and the heat isolation box body are arranged at the top part of the cold storage. The overhead integral refrigerator has the advantages that the overhead integral refrigerator is independent refrigerating equipment, the site construction and installation of the cold storage are convenient, the construction and maintenance cost of the refrigerating equipment is reduced, the quality of the equipment is improved, and the overhead integral refrigerator is suitable for one to fifteen refrigerating equipment.

The invention discloses a roller cage shoe rigidity test device with the adjustable center height. The rigidity test device comprises a moving device, a rack, a vertical lifting device, and a horizontal control device. The moving device consists of brake-included heavy fixed truckles and brake-included heavy universal truckles and is installed at the bottom of the rack. The vertical lifting device includes a worm and gear lifting device, a height measuring device, and a vertical support frame and is fixed at the rack by the vertical support frame; and the worm and gear lifting device includes a lead screw connected with the height measuring device. The horizontal control device consists of a hydraulic control device, a displacement sensor, a pressure sensor, and a digital display instrument. The vertical lifting device and the horizontal control device control a push head guiding unit jointly; the push head guiding unit is connected with a pressing plate; and the pressing plate applies forces to a to-be-tested roller cage shoe horizontally. According to the test device, the center height of the test stand of the roller cage shoe can be adjusted; the test and measurement become conveniently; and the tedious operations of mounting and dismounting of roller cage shoes with different center heights can be avoided.

The invention discloses a single-pass double-core-head pipe drawing device, belongs to the technical field of pipe drawing forming, and aims to realize continuous deformation of a pipe in one pass, improve the production efficiency and the equipment utilization rate, reduce the labor intensity, and is wide in application range and high in practicability. The single-pass double-core-head pipe drawing device comprises a die sleeve and a pressing plate. The single-pass double-core-head pipe drawing device is characterized in that a through hole is formed in the center of the die sleeve; a stepped groove is formed in the die sleeve; the through hole is communicated with the stepped groove; a small-diameter outer die and a large-diameter outer die are correspondingly arranged in the stepped groove; a gap is reserved between the corresponding faces of the small-diameter outer die and the large-diameter outer die; the small-diameter outer die and the large-diameter outer die are provided with coaxial pipe holes at the same time; a pipe is arranged in the pipe hole; a small-diameter moving core head and a large-diameter moving core head are arranged in the pipe; the small-diameter moving core head corresponds to the small-diameter outer die; the large-diameter moving core head corresponds to the large-diameter outer die; and the pressing plate is detachably connected to one end of the die sleeve through a screw.

A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.