171results about How to "Improve pixel aperture ratio" patented technology

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

Disclosed is a thin film transistor array panel. The panel includes a plurality of pixels arranged in the form of a matrix each with a pixel electrode and a switching element connected to the pixel electrode, and a plurality of gate lines connected to the switching elements and extending in the row direction. A pair of the gate lines are connected to pixels in each pixel row. A plurality of data lines are connected to the switching elements, and elongated in the column direction. Each data line is provided between two columns of the pixels. The respective data lines are horizontally bent between the two adjacent gate lines, and vertically extend between the two pixel rows.

The invention relates to a pixel structure, a display method of the pixel structure and a display device comprising the pixel structure. The pixel structure comprises first sub-pixels, second sub-pixels and third sub-pixels, wherein two oppositely-arranged adjacent third sub-pixels form a third sub-pixel set, the second sub-pixels are arranged in the line direction to form second sub-pixel lines, the first sub-pixels and the third sub-pixel sets are alternatively arranged in the line direction, and the second sub-pixel lines and lines formed by the first sub-pixels and the third sub-pixel sets are alternatively arranged. The second sub-pixels are arranged in the line direction to form the second sub-pixel lines, the first sub-pixels and the third sub-pixel sets are alternatively arranged in the line direction, and the second sub-pixel line and the lines formed by the first sub-pixels and the third sub-pixel sets are alternatively arranged; a geometric center of each second sub-pixel is located on a central line of a connecting line of any two of the two adjacent first sub-pixels and the two adjacent third sub-pixel sets. By means of the pixel structure, the opening rate of the sub-pixels can be improved while the high resolution ratio is achieved.

The invention discloses a pixel array, comprising a plurality of pixels, a plurality of data lines, a plurality of reading lines and a plurality of gate lines, wherein the data lines and the reading lines are configured between two adjacent pixels in turn; two adjacent pixels at two sides of each data line are coupled to the same data line and coupled to different gate lines; and at least one part of reading lines is coupled to one of two adjacent pixels at two sides. The invention also provides a touch panel comprising the pixel array.

Provided is a display panel including: a plurality of pixel electrodes divided into a plurality of groups; and a plurality of common electrodes arranged at a ratio of one to a plurality of pixel electrodes included in one of the plurality of groups. Each of a plurality of sensor electrode lines overlaps with corresponding one of a plurality of data signal lines in plan view. The plurality of sensor electrode lines and each of the plurality of common electrodes overlap each other in plan view. The each of the plurality of common electrodes is electrically connected to the plurality of sensor electrode lines. At least one insulating film is formed between each of a region between the data signal lines and the sensor electrode lines, a region between the sensor electrode lines and the common electrodes, and a region between the common electrodes and the pixel electrodes.

An active device and an active device array substrate are provided, wherein the active device array substrate includes a substrate and a plurality of active devices being located on the substrate, and at least one of the active devices includes a first thin film transistor and a second thin film transistor. The first thin film transistor is located on the substrate and has a first channel layer. The second thin film transistor stacks on the first thin film transistor, wherein the second thin film transistor has a second channel layer. The first thin film transistor and the second thin film transistor share a common gate electrode and the common gate electrode is located between the first channel layer and the second channel layer.

In a TFT active matrix electro-optical device, the pixel-aperture ratio is increased while a pixel electrode and a semiconductor layer are interconnected, and a high resolution image can be displayed, with a relatively simple structure. For that purpose, the electro-optical device includes a TFT array substrate provided with a TFT, a data line, a scanning line, a capacitor line, and a pixel electrode. The pixel electrode and the TFT are electrically connected to each other, and are interconnected by a first barrier layer through contact holes. A second barrier layer is formed broader than the data line, and a portion of the second barrier layer overlaps the pixel electrode, and thus the pixel-aperture region is delimited.

The invention relates to a TFT-LCD (thin film transistor-liquid crystal display) array substrate and a manufacture method thereof. The TFT-LCD array substrate comprises a grid line formed on the substrate, a data line and a public electrode line, wherein a pixel electrode forms in a pixel region limited by the grid line and the data line, and a thin film transistor forms on the cross place of the pixel region; and the public electrode line is parallel to the data line and positioned below the data line. Through placing the public electrode line below the data line, the invention maximally reduces an area occupied by the public electrode line in the pixel region and enhances pixel opening ratio on one hand, and can play a shading role on the other hand. Meanwhile, because only one first passivation layer exists between the public electrode line and the pixel line, the distance between two poles of a storage capacitance is greatly reduced and the storage capacitance is enhanced.

Disclosed is a thin film transistor array panel. The panel includes a plurality of pixels arranged in the form of a matrix each with a pixel electrode and a switching element connected to the pixel electrode, and a plurality of gate lines connected to the switching elements and extending in the row direction. A pair of the gate lines are connected to pixels in each pixel row. A plurality of data lines are connected to the switching elements, and elongated in the column direction. Each data line is provided between two columns of the pixels. The respective data lines are horizontally bent between the two adjacent gate lines, and vertically extend between the two pixel rows.

The invention discloses a low-temperature polycrystalline silicon thin-film transistor based on a dual-gate structure and a preparation method of the low-temperature polycrystalline silicon thin-film transistor with the dual-gate structure. The low-temperature polycrystalline silicon thin-film transistor comprises a substrate; at least one patterning amorphous silicon layer which is arranged in the barrier layer of the substrate and forms a bottom-gate; an N-channel metal oxide semiconductor which is arranged on the barrier layer; and a P-channel metal oxide semiconductor which is located on the barrier layer, wherein the patterning gate electrode layer formed by the N-channel metal oxide semiconductor and the bottom-gate formed by at least one patterning amorphous silicon layer are combined to form dual-gate structure, so that the current-voltage characteristic is more stable and the breakover current is improved obviously; the driving capacity is increased, the power consumption is reduced and the yield rate of products is improved.

A pixel circuit including a first transistor, a coupling capacitor, a second transistor, and a luminescent element is provided. The first transistor is used as a switch. The coupling capacitor stores a coupling voltage and transmits the coupling voltage to the gate of the second transistor for compensating a drift of the threshold voltage of the second transistor. The second transistor provides a driving current for driving the luminescent element to emit light.

A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

The invention provides a liquid crystal display device with a built-in touch device. The liquid crystal display device comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate is provided with a scanning line, a data line and a plurality of pixel units; each pixel unit comprises three pixel subunits; each pixel subunit is provided with a film crystal switch and a pixel electrode; the second substrate is provided with a conductive PS; one pixel subunit is internally provided with a microswitch, a Y-sensor line which is parallel to the data line and is positioned in the same layer together with the data line, and a conductive PAD; the microswitch comprises a grid electrode connected with the scanning line, a source electrode connected with the Y-sensor line and a drain electrode connected with the conductive PAD; and the conductive PAD is opposite to the conductive PS. According to the liquid crystal display device provided by the invention, an existing press resistance-type built-in touch device is improved, defects of such devices at present are overcome, the aperture opening ratio of pixels is improved, a press resistance-type built-in touch technology can be applied to large-size panels, and the driving circuit of the touch device is simplified.

The invention provides an array substrate and a display device. The array substrate comprises a first material layer located on a thin film transistor, a conductive sandwich layer located on the first material layer and a second material layer located on the conductive sandwich layer. The first material layer is provided with a first via hole. The conductive sandwich layer is electrically connected with the drain of the thin film transistor through the first via hole. The second material layer is provided with second via hole staggered with first via hole. A pixel electrode is located on the second material layer. The conductive sandwich layer is electrically connected with the pixel electrode through the second via hole so as to form a storage capacitor along with a public electrode. Part of material, located in the opening area of the array substrate, of the first material layer and part of material, located in the opening area of the array substrate, of the second material layer are color photo-resistors. The array substrate and the display device has the advantages that storage capacitance is increased, and display stability, pixel aperture rate and display quality are increased.

An electro-optical device including, above a substrate: data lines extending in a first direction, scanning lines extending in a second direction which intersects the data lines, pixel electrodes and thin film transistors provided so as to correspond to intersection regions of the data lines and the scanning lines, and storage capacitors electrically connected to the thin film transistors and the pixel electrodes. Dielectric films which constitute the storage capacitors are made of a plurality of layers including different materials and one of the plurality of the layers is made of a material having a higher dielectric constant than those of the other layers.

Disclosed is a liquid crystal display device, which is capable of reducing a required response speed and increasing a pixel aperture ratio, as compared with a field sequential driving scheme. A unit pixel of a liquid crystal display panel is made up of a first sub-pixel adapted to allow only any two of red, green and blue lights to pass therethrough, and a second sub-pixel adapted to allow only a remaining one of the red, green and blue lights to pass therethrough, wherein one frame of image is time-divided into n pieces (wherein n is an integer of two or more), and respective image information about the two lights are applied to the first sub-pixel during every duration of the 1 / n frame, while applying image information about the remaining one light to the second sub-pixel during a duration of the one frame of image. Further, the respective two lights are emitted during every duration of the 1 / n frame in synchronization with applying the respective image information about the two lights, while continuously emitting the remaining one light during the duration of the one frame of image.

The invention provides an array substrate. A floating electrode layer is additionally arranged in a contact hole enabling electric connection of a TFT metal layer and a pixel electrode layer to be achieved, so that the pixel electrode layer is electrically connected with the metal layer again through the bridging of the floating electrode layer. Resistance at the contact hole and the film breakage probability of the pixel electrode layer in the contact hole can be reduced. In addition, the edge of the floating electrode layer is located in the contact hole, the dimension of a corresponding black matrix layer can be reduced, and the pixel aperture opening ratio can be increased. The invention further provides a method for manufacturing the array substrate and a liquid crystal display panel with the array substrate.

The invention provides a pixel circuit and a liquid crystal display panel. The pixel circuit is in a 2T structure; on the one hand, a subarea liquid crystal capacitor (Clc2) is connected in series with a voltage-dividing capacitor (Cs), or the channel length-to-width ratio of a subarea thin-film transistor (T2) is smaller than that of a main-area thin-film transistor (T1), so that the voltage of the subarea liquid crystal capacitor (Clc2) is lower than that of a main-area liquid crystal capacitor (Clc1) to improve color shift significantly; on the other hand, compared with an existing pixel circuit in a 3T structure, the pixel circuit omits a third thin-film transistor which is used for discharging in a pixel subarea, thereby eliminating influence of discharging of the third thin-film transistor on common electrodes (Acom) of an array substrate, reducing horizontal crosstalk and further improving the pixel opening rate.

The invention provides a liquid crystal display device which comprises a first substrate, a second substrate, and a liquid crystal layer. The first substrate is opposite to the second substrate. The liquid crystal layer is stuck between the first substrate and the second substrate. The first substrate comprises a pixel electrode and a first alignment film. The first alignment film, which is opposite to the second substrate, is arranged on the pixel electrode. The second substrate comprises at least one support pillar, a transparent conducting layer and a second alignment film. The support pillar is coated with the transparent conducting layer. The second alignment film, which is opposite to the first substrate, is arranged on the transparent conducting layer. The first alignment film attaches to the second alignment film on the support pillar. According to the design, the support pillar is coated with the pixel electrode or the transparent conducting layer without designing special storage capacitance lines on the first substrate and without widening the width of scanning lines. The liquid crystal display device can not only increase the pixel opening ratio substantially and improve effective light-permeating area, but also shorten manufacture time and lower manufacture cost.

An organic luminescence includes pixel electrodes. Banks are each generally between adjacent ones of the pixel electrodes. The banks define apertures that each correspond to one of the pixel electrodes. An organic luminescent layer is within each of the apertures, and an upper electrode is above the banks and the organic luminescent layer. At least a portion of a periphery of each of the apertures includes curved portions and cusps. The curved portions are concave, and adjacent ones of the curved portions define each of the cusps.

The invention relates to a pixel structure and an array substrate and a liquid crystal panel thereof. The pixel structure comprises data lines, gate lines, thin film transistors and pixel electrodes comprising at least two domains. The thin film transistors are connected with the data lines, the gate lines and the pixel electrodes. At least one of the data lines and the gate lines coincides oppositely in the vertical direction corresponding to the trunk regions of the pixel electrodes, and the main regions of the pixel electrodes are hollowed main regions according to the corresponding data lines or gate lines. According to the pixel structure and the array substrate and the liquid crystal panel thereof, the overlapping area of the data lines or gate lines and the pixel electrodes can be reduced, the pixel aperture ratio of the liquid crystal panel can be increased, coupling capacitance can be reduced, and the load and delay of signals can be effectively reduced.

The invention discloses an OLED display device, which comprises an OLED pixel driving circuit. The OLED pixel driving circuit comprises a first thin film transistor (T1), a second thin film transistor(T2), a third thin film transistor (T3), a storage capacitor (Cst) and an organic light emitting diode, wherein the first thin film transistor (T1) is a double-gate oxide thin film transistor, and the second thin film transistor (T2) and the third thin film transistor (T3) are top gate self-aligned oxide thin film transistors. The invention further discloses a preparation method of the TFT arraysubstrate. The TFT array substrate is used for preparing the OLED display device.

An electro-optical device includes a substrate on which a TFT, a data line, a scanning line, a capacitance line, a first intermediate conductive layer, a second intermediate conductive layer, and a pixel electrode are formed. A first contact hole, via which the drain of the TFT and the first intermediate conductive layer are connected to each other, is formed in an area which overlaps, in plan view, with the data line. The above-described structure of this electro-optical device, which includes the intermediate conductive layer disposed between the pixel electrode and the pixel switching TFT, allows an increase in the pixel aperture ratio and also an increase in the storage capacitance. Besides, degradation in the quality of a displayed image due to steps formed, in the vicinity of the pixel electrode, on the surface of an alignment film is minimized.

A thin film transistor array substrate and a fabricating method thereof are disclosed. First, a substrate is provided. A patterned transparent conductive layer is then formed on the substrate. Next, a patterned first metal layer is formed to form a plurality of scan lines and a plurality of gates. Thereafter, a gate insulation layer is formed over the substrate. Moreover, a patterned semiconductor layer is formed to form a channel layer above the gates. The semiconductor layer is patterned with the same mask as that for patterning the transparent conductive layer. Additionally, a patterned second metal layer is formed to form a plurality of data lines, a plurality of sources, and a plurality of drains. After that, a dielectric layer is formed over the substrate. Finally, pixel electrodes are formed on the dielectric layer.

The invention relates to the technical field of display, and discloses an array substrate, a preparing method thereof, a display panel and a display device. The array substrate comprises a substrate body, a plurality of grid wires and a plurality of touch control electrode wires, wherein a plurality of pixels are arranged in a pixel area of the substrate body in arrays, the grid wires extend on the substrate body in the first direction of the pixel arrays, the touch control electrode wires extend on the substrate body in the first direction of the pixel arrays and are insulated from the grid wires, and the positive projection of the touch control electrode wires on the substrate body and the positive projection of the grid wires on the substrate body are at least partly overlapped. Compared with similar array substrates in the prior art, the array substrate has the advantages that the display area occupied by signals wires is small, the opening rate of the pixels is large, the short-circuit situation between the touch control electrode wires and the data wires cannot easily happen, the opening rate of the array substrate is high, and the x-line failures can be avoided.