167results about How to "Improve pixel aperture ratio" patented technology

Disclosed is a thin film transistor array panel. The panel includes a plurality of pixels arranged in the form of a matrix each with a pixel electrode and a switching element connected to the pixel electrode, and a plurality of gate lines connected to the switching elements and extending in the row direction. A pair of the gate lines are connected to pixels in each pixel row. A plurality of data lines are connected to the switching elements, and elongated in the column direction. Each data line is provided between two columns of the pixels. The respective data lines are horizontally bent between the two adjacent gate lines, and vertically extend between the two pixel rows.

Provided is a display panel including: a plurality of pixel electrodes divided into a plurality of groups; and a plurality of common electrodes arranged at a ratio of one to a plurality of pixel electrodes included in one of the plurality of groups. Each of a plurality of sensor electrode lines overlaps with corresponding one of a plurality of data signal lines in plan view. The plurality of sensor electrode lines and each of the plurality of common electrodes overlap each other in plan view. The each of the plurality of common electrodes is electrically connected to the plurality of sensor electrode lines. At least one insulating film is formed between each of a region between the data signal lines and the sensor electrode lines, a region between the sensor electrode lines and the common electrodes, and a region between the common electrodes and the pixel electrodes.

In a TFT active matrix electro-optical device, the pixel-aperture ratio is increased while a pixel electrode and a semiconductor layer are interconnected, and a high resolution image can be displayed, with a relatively simple structure. For that purpose, the electro-optical device includes a TFT array substrate provided with a TFT, a data line, a scanning line, a capacitor line, and a pixel electrode. The pixel electrode and the TFT are electrically connected to each other, and are interconnected by a first barrier layer through contact holes. A second barrier layer is formed broader than the data line, and a portion of the second barrier layer overlaps the pixel electrode, and thus the pixel-aperture region is delimited.

The invention relates to a TFT-LCD (thin film transistor-liquid crystal display) array substrate and a manufacture method thereof. The TFT-LCD array substrate comprises a grid line formed on the substrate, a data line and a public electrode line, wherein a pixel electrode forms in a pixel region limited by the grid line and the data line, and a thin film transistor forms on the cross place of the pixel region; and the public electrode line is parallel to the data line and positioned below the data line. Through placing the public electrode line below the data line, the invention maximally reduces an area occupied by the public electrode line in the pixel region and enhances pixel opening ratio on one hand, and can play a shading role on the other hand. Meanwhile, because only one first passivation layer exists between the public electrode line and the pixel line, the distance between two poles of a storage capacitance is greatly reduced and the storage capacitance is enhanced.

The invention discloses a low-temperature polycrystalline silicon thin-film transistor based on a dual-gate structure and a preparation method of the low-temperature polycrystalline silicon thin-film transistor with the dual-gate structure. The low-temperature polycrystalline silicon thin-film transistor comprises a substrate; at least one patterning amorphous silicon layer which is arranged in the barrier layer of the substrate and forms a bottom-gate; an N-channel metal oxide semiconductor which is arranged on the barrier layer; and a P-channel metal oxide semiconductor which is located on the barrier layer, wherein the patterning gate electrode layer formed by the N-channel metal oxide semiconductor and the bottom-gate formed by at least one patterning amorphous silicon layer are combined to form dual-gate structure, so that the current-voltage characteristic is more stable and the breakover current is improved obviously; the driving capacity is increased, the power consumption is reduced and the yield rate of products is improved.

A pixel circuit including a first transistor, a coupling capacitor, a second transistor, and a luminescent element is provided. The first transistor is used as a switch. The coupling capacitor stores a coupling voltage and transmits the coupling voltage to the gate of the second transistor for compensating a drift of the threshold voltage of the second transistor. The second transistor provides a driving current for driving the luminescent element to emit light.

Disclosed is a liquid crystal display device, which is capable of reducing a required response speed and increasing a pixel aperture ratio, as compared with a field sequential driving scheme. A unit pixel of a liquid crystal display panel is made up of a first sub-pixel adapted to allow only any two of red, green and blue lights to pass therethrough, and a second sub-pixel adapted to allow only a remaining one of the red, green and blue lights to pass therethrough, wherein one frame of image is time-divided into n pieces (wherein n is an integer of two or more), and respective image information about the two lights are applied to the first sub-pixel during every duration of the 1/n frame, while applying image information about the remaining one light to the second sub-pixel during a duration of the one frame of image. Further, the respective two lights are emitted during every duration of the 1/n frame in synchronization with applying the respective image information about the two lights, while continuously emitting the remaining one light during the duration of the one frame of image.

This invention provides a thin film transistor LCD and its process method. This thin film transistor LCD comprises a thin film transistor base plate on the color filter layer, wherein, the thin film transistor is located on the color filter layer and the data line is located between the color filter layer and down base plate and the thin film transistor is coupled between the data line and the picture element electrode.

The invention provides a liquid crystal display device which comprises a first substrate, a second substrate, and a liquid crystal layer. The first substrate is opposite to the second substrate. The liquid crystal layer is stuck between the first substrate and the second substrate. The first substrate comprises a pixel electrode and a first alignment film. The first alignment film, which is opposite to the second substrate, is arranged on the pixel electrode. The second substrate comprises at least one support pillar, a transparent conducting layer and a second alignment film. The support pillar is coated with the transparent conducting layer. The second alignment film, which is opposite to the first substrate, is arranged on the transparent conducting layer. The first alignment film attaches to the second alignment film on the support pillar. According to the design, the support pillar is coated with the pixel electrode or the transparent conducting layer without designing special storage capacitance lines on the first substrate and without widening the width of scanning lines. The liquid crystal display device can not only increase the pixel opening ratio substantially and improve effective light-permeating area, but also shorten manufacture time and lower manufacture cost.

An organic luminescence includes pixel electrodes. Banks are each generally between adjacent ones of the pixel electrodes. The banks define apertures that each correspond to one of the pixel electrodes. An organic luminescent layer is within each of the apertures, and an upper electrode is above the banks and the organic luminescent layer. At least a portion of a periphery of each of the apertures includes curved portions and cusps. The curved portions are concave, and adjacent ones of the curved portions define each of the cusps.

The invention relates to a pixel structure and an array substrate and a liquid crystal panel thereof. The pixel structure comprises data lines, gate lines, thin film transistors and pixel electrodes comprising at least two domains. The thin film transistors are connected with the data lines, the gate lines and the pixel electrodes. At least one of the data lines and the gate lines coincides oppositely in the vertical direction corresponding to the trunk regions of the pixel electrodes, and the main regions of the pixel electrodes are hollowed main regions according to the corresponding data lines or gate lines. According to the pixel structure and the array substrate and the liquid crystal panel thereof, the overlapping area of the data lines or gate lines and the pixel electrodes can be reduced, the pixel aperture ratio of the liquid crystal panel can be increased, coupling capacitance can be reduced, and the load and delay of signals can be effectively reduced.

An electro-optical device includes a substrate on which a TFT, a data line, a scanning line, a capacitance line, a first intermediate conductive layer, a second intermediate conductive layer, and a pixel electrode are formed. A first contact hole, via which the drain of the TFT and the first intermediate conductive layer are connected to each other, is formed in an area which overlaps, in plan view, with the data line. The above-described structure of this electro-optical device, which includes the intermediate conductive layer disposed between the pixel electrode and the pixel switching TFT, allows an increase in the pixel aperture ratio and also an increase in the storage capacitance. Besides, degradation in the quality of a displayed image due to steps formed, in the vicinity of the pixel electrode, on the surface of an alignment film is minimized.

The invention relates to the technical field of display, and discloses an array substrate, a preparing method thereof, a display panel and a display device. The array substrate comprises a substrate body, a plurality of grid wires and a plurality of touch control electrode wires, wherein a plurality of pixels are arranged in a pixel area of the substrate body in arrays, the grid wires extend on the substrate body in the first direction of the pixel arrays, the touch control electrode wires extend on the substrate body in the first direction of the pixel arrays and are insulated from the grid wires, and the positive projection of the touch control electrode wires on the substrate body and the positive projection of the grid wires on the substrate body are at least partly overlapped. Compared with similar array substrates in the prior art, the array substrate has the advantages that the display area occupied by signals wires is small, the opening rate of the pixels is large, the short-circuit situation between the touch control electrode wires and the data wires cannot easily happen, the opening rate of the array substrate is high, and the x-line failures can be avoided.

An electro-optical device includes a first sub pixel and a second sub pixel. A pixel is configured by the first sub pixel and the second sub pixel only, and the first sub pixel and the second sub pixel emit light of different colors.

An electro-optical device includes above a substrate: data lines extending in a first direction; scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other; pixel electrodes and thin-film transistors each placed in corresponding regions corresponding to intersections of the scanning lines and data lines; storage capacitors disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes; a capacitor line disposed above the data lines; first junction electrodes, formed using the same film used to form the data lines, each electrically connecting the corresponding pixel potential capacitor electrodes of the storage capacitors and pixel electrodes; and second junction electrodes, formed using the same film as that to form the data lines, each electrically connecting the corresponding constant potential capacitor electrodes of the storage capacitors and the capacitor line. The data lines, first junction electrodes, and second junction electrodes each including a nitride film.