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Novel stacked thin-film solar cell and manufacturing method thereof (a-Si:H/a-SiGe:H/CIGS or CZTS stacked solar cell and manufacturing method thereof)

A technology of thin-film solar cells and manufacturing methods, applied in sustainable manufacturing/processing, final product manufacturing, circuits, etc., can solve problems such as high absorption coefficient, narrow optical band gap, and not very matching solar spectrum, and achieve high photoelectric conversion efficiency effect

Inactive Publication Date: 2015-01-07
YUNNAN NORMAL UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

However, its optical bandgap is narrow (about 1.1eV), which does not match the solar spectrum very well
On the other hand, it is difficult for amorphous silicon-based films to achieve both a narrower band gap and a higher absorption coefficient through energy band engineering (such as Ge alloying)
In addition, the current world record for photoelectric conversion efficiency of copper indium gallium selenide (CIGS) or copper zinc tin sulfur (CZTS) single-junction solar cells is only 21.7% (Manz Group of Germany and its R&D partner ZSW) and 12.6% (Solar Frontier of Japan) , the highest photoelectric conversion efficiency of amorphous silicon triple-junction (a-Si:H / a-SiGe:H / nc-Si:H) stacked thin film solar cells is only 16.3% (Nankai University)

Method used

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  • Novel stacked thin-film solar cell and manufacturing method thereof (a-Si:H/a-SiGe:H/CIGS or CZTS stacked solar cell and manufacturing method thereof)
  • Novel stacked thin-film solar cell and manufacturing method thereof (a-Si:H/a-SiGe:H/CIGS or CZTS stacked solar cell and manufacturing method thereof)
  • Novel stacked thin-film solar cell and manufacturing method thereof (a-Si:H/a-SiGe:H/CIGS or CZTS stacked solar cell and manufacturing method thereof)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] On the glass substrate, a thin layer of Mo with a thickness of ~10nm was deposited by DC magnetron sputtering technology (atmospheric pressure ~1.2-1.5pa, temperature ~400°C);

[0018] Then linearly reduce the gas pressure to ~0.2-0.5Pa, sputter ~1μm thick Mo thin layer;

[0019] Deposit ~3 μm thick CIGS (atomic ratio Cu / (In+Ga)~0.88, Ga / (In+Ga)~0.3) absorber layer;

[0020] By chemical bath deposition (ZnSO 4 (0.16 M), ammonia water (7.5 M), thiourea (0.6 M)) to prepare a ~10 μm thick ZnS buffer layer;

[0021] A dense ZnO film with a thickness of ~50nm was prepared by sputtering;

[0022] Anneal the ZnO thin film at 450°C for 30min;

[0023] Using PECVD process, in SiH 4 ,PH 3 , CO 2 , H 2 Deposit a n-type heavily doped a-SiOx:H transition layer with a thickness of ~10nm under the atmosphere;

[0024] Using PECVD process, in SiH 4 , BF 3 , CO 2 , H 2 Deposit a p-type heavily doped a-SiOx:H back electrode layer with a thickness of ~10nm under the atmospher...

Embodiment 2

[0030] On the glass substrate, a thin Mo layer with a thickness of ~10nm was deposited by DC magnetron sputtering technology (atmospheric pressure ~1.2-1.5pa, temperature ~400℃);

[0031] Then linearly reduce the gas pressure to ~0.2-0.5Pa, sputter ~1μm thick Mo thin layer;

[0032] Deposit ~3 μm thick CIGS (atomic ratio Cu / (In+Ga)~0.88, Ga / (In+Ga)~0.3) absorber layer;

[0033] By chemical bath deposition (ZnSO 4(0.16 M), ammonia water (7.5 M), thiourea (0.6 M)) to prepare a ~10 μm thick ZnS buffer layer;

[0034] A dense ZnO film with a thickness of ~50nm was prepared by sputtering;

[0035] Anneal the ZnO thin film at 450°C for 30min;

[0036] Using PECVD process, in SiH 4 ,PH 3 , CO 2 , H 2 Deposit ~10nm thick n-type heavily doped a-SiOx:H battery transition layer under atmosphere;

[0037] Using PECVD process, in SiH 4 , BF 3 , CO 2 , H 2 Deposit a p-type heavily doped a-SiOx:H battery back electrode layer with a thickness of ~10nm under the atmosphere;

[003...

Embodiment 3

[0046] On the glass substrate, a thin Mo layer with a thickness of ~10nm was deposited by DC magnetron sputtering technology (atmospheric pressure ~1.2-1.5pa, temperature ~400℃);

[0047] Then linearly reduce the gas pressure to ~0.2-0.5Pa, sputter ~1μm thick Mo thin layer;

[0048] A CZTS absorber layer with a thickness of ~3 μm was prepared by co-evaporation technique;

[0049] By chemical bath deposition (ZnSO 4 (0.16 M), ammonia water (7.5 M), thiourea (0.6 M)) to prepare a ~10 μm thick ZnS buffer layer;

[0050] A dense ZnO film with a thickness of ~50nm was prepared by sputtering;

[0051] Anneal the ZnO thin film at 450°C for 30min;

[0052] Using PECVD process, in SiH 4 ,PH 3 , CO 2 , H 2 Deposit a n-type heavily doped a-SiOx:H transition layer with a thickness of ~10nm under the atmosphere;

[0053] Using PECVD process, in SiH 4 , BF 3 , CO 2 , H 2 Deposit a p-type heavily doped a-SiOx:H back electrode layer with a thickness of ~10nm under the atmosphere;...

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Abstract

The invention belongs to the field of efficient and low-cost thin-film solar cell and particularly provides a novel stacked thin-film solar cell and a manufacturing method thereof (an a-Si:H / a-SiGe:H / CIGS or CZTS stacked solar cell and a manufacturing method thereof). The manufacturing method comprises the steps of using glass as a substrate and preparing all layers of thin films according to the sequence of Mo, a CIGS or CZTS bottom cell absorption layer, a ZnS (O, OH) bottom cell buffering layer, a ZnO bottom cell window layer, a cell pre-deposited transition layer in n-type heavy doping a-SiOx: H, a cell back electrode layer in p-type heavy doping a-SiOx: H, a cell intrinsic layer in a-SiGe: H, a cell window layer in the n-type heavy doping a-SiOx: H, a top cell back electrode in the p-type heavy doping a-SiOx: H, an a-Si: H top cell intrinsic layer, an n-type a-SiOx: H top cell window layer, an n-type heavy doping a-SiOx: H top cell window layer, a transparent conductive ITO thin film and a Ag / Al metal grid line front electrode. The copper indium gallium selenide or copper zinc tin sulfide / amorphous silicon germanium / amorphous silicon three-junction stacked thin-film solar cell is formed.

Description

technical field [0001] The invention relates to a novel stacked thin film solar cell and its manufacturing method, in particular to a p-i-n solar cell with a copper indium gallium selenide (CIGS) or copper zinc tin sulfur (CZTS) polycrystalline compound heterojunction thin film solar cell as the bottom cell. Amorphous silicon germanium (a-SiGe:H) and amorphous silicon (a-Si:H) double-junction / triple-junction stacked thin-film solar cells with middle cell and top cell respectively and their manufacturing methods are high-efficiency and low-cost thin films field of solar cells. Background technique [0002] A solar cell is a device that uses the photovoltaic effect to directly convert solar energy into electrical energy. Since the commercialization of terrestrial solar cells in the mid-1970s, crystalline silicon has occupied a dominant position as a basic battery material, and crystalline silicon solar cells and their manufacturing technologies have almost reached the extreme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/18
CPCH01L31/0376H01L31/06H01L31/20Y02E10/50Y02P70/50
Inventor 胡志华施光辉刘小娇
Owner YUNNAN NORMAL UNIV
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