Method for manufacturing film solar cell

Abstract

The invention discloses a method for manufacturing a film solar cell, which comprises the following steps: providing a deposition reaction chamber; putting a substrate on the surface of an electrode plate in the reaction chamber; introducing reaction gases comprising germanium tetrafluoride, silicane and hydrogen into the reaction chamber; and using radio-frequency glow discharge to excite the reaction gases into plasma to deposite a amorphous silicon-germanium film. The method for manufacturing the film solar cell can remarkably improve evenness of band gap and thickness of amorphous silicon-germanium films deposited on the large-area substrate in batch in a large-sized PECVD deposition device.

Description

technical field [0001] The invention relates to the technical field of photovoltaic solar cells, in particular to a method for manufacturing thin-film solar cells. Background technique [0002] With the increasing shortage of energy, the development and utilization of renewable green energy has attracted more and more attention, especially the utilization of solar energy has been favored by the world. Photovoltaic devices as solar energy conversion media, especially the hydrogenated amorphous silicon (a-Si:H) thin-film photovoltaic devices that have appeared in recent years, have the advantages of large area, low cost, can be produced on thin and light substrates, and are easy to lay and install. Represents the development trend of photovoltaic technology. [0003] Thin-film photovoltaic devices, also known as thin-film solar cells or thin-film photovoltaic cells, are used to convert light energy emitted by light sources such as sunlight, lamps or fluorescent lights into el...

AI Technical Summary

Problems solved by technology

Due to the rapid decomposition of germane, the consumption of germane is greater than that of silane. With the gas flow, germane is consumed too quickly relative to silane, so that the content of germanium in the film deposited on the surface of the substrate in other areas far from the gas inlet and the film The layer thickness is lower than that of the film deposited on the surface of the substrate near the air inlet, resulting in the content of germanium, the proportion of silicon-germanium alloy and the non-uniformity of the film thickness in the amorphous silicon germanium film deposited on the surface of the large-area substrate. The amorphous silicon germanium thin film on the surface of the substrate has uneven band gap and uneven light absorption characteristics, which hinders the further improvement of the quality of thin film solar cells under high production efficiency

Images