Memory cell and fabricating method thereof

Abstract

A fabricating method of a memory cell including the following steps is provided. First, a poly-Si island including a source doped region, a drain doped region, and a channel region located therebetween is formed on a substrate. Then, a dielectric layer is formed on the poly-Si island. Afterward, an amorphous silicon-germanium (α-SiGe) layer is formed on the dielectric layer. Next, a laser annealing process is performed to oxidize the α-SiGe layer into a silicon oxide layer, so as to separate out Ge atoms from the α-SiGe layer to form a Ge quantum dot layer between the silicon oxide layer and the dielectric layer. After that, a control gate is formed on the silicon oxide layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of Taiwan application serial no. 95126500, filed on Jul. 20, 2006. All disclosure of the Taiwan application is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of Invention[0003]The present invention relates to a memory cell and a fabricating method thereof. More particularly, the present invention relates to a memory cell having metal-oxide-quantum dot-oxide-polysilicon fabricated on a glass substrate and a fabricating method thereof.[0004]2. Description of Related Art[0005]Due to the features of light-weight and compactness, the liquid crystal display (LCD) and the organic light emitting display (OLED) have gradually become display tools of the portable terminal systems in the last twenty years. In particular, the twist nematic liquid crystal display (TN-LCD), the super twist nematic liquid crystal display (STN-LCD), the thin film transistor liquid crystal display (TF...

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Benefits of technology

[0012]Accordingly, the present invention is directed to provide a method of fabricating a memory cell, which c

Problems solved by technology

Therefore, the TFT-LCD with such architecture has a high power-consumption.

Moreover, because the TFTs T1 and T2 adversely affect the aperture ratio of the pixel structure 100, the pixel structure 100 is applicable to a reflective LCD panel, and is not suitable for a transmissive LCD panel.

However, as the above method of forming Ge quantum dots must be carried out under a high temperature, which leading to the increase of the thermal budget of the process.

However, this method is quite complicated and may cause an increase of the thermal budget of the process.

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