Oxygen-doped amorphous silicon germanium film, heterojunction crystalline silicon solar cell and manufacturing method

Abstract

The invention provides an oxygen-doped amorphous silicon germanium film used for passivating the crystalline silicon surface, a heterojunction crystalline silicon solar cell and a manufacturing method. The manufacturing method of the oxygen-doped amorphous silicon germanium film used for passivating the crystalline silicon surface comprises steps of providing a crystalline silicon substrate and adopting a chemical vapor deposition method to deposit the oxygen-doped amorphous silicon germanium film on the surface of the crystalline silicon substrate. Through adjusting the oxygen concentration and the germanium concentration in a reaction gas flow, dense oxygen-doped amorphous silicon germanium film material with continuous and adjustable band gap can be obtained, the material uses oxygen and germanium to suppress interface epitaxy and adjust the band gap of the material, effective collection of hole carriers can be realized, and the efficiency of the heterojunction crystalline silicon solar cell can be effectively improved.

Description

technical field [0001] The invention belongs to the field of solar cells and manufacturing, and in particular relates to an oxygen-doped amorphous silicon germanium film for passivating the surface of crystalline silicon, a heterogeneous crystalline silicon solar cell and a preparation method. Background technique [0002] Energy is the driving force for the survival and development of a country. In the era of increasingly depleted fossil energy and prominent environmental problems, research on new alternative energy will provide a strong guarantee for the sustainable development of the national economy. The invention relates to a novel amorphous thin film passivation layer, which forms an abrupt interface on the surface of crystalline silicon and effectively reduces the recombination rate of carriers on the surface of crystalline silicon, thereby improving the performance of amorphous silicon / crystalline silicon heterojunction solar cells. This layer is a necessary conditi...

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Problems solved by technology

However, the bandgap of the amorphous passivation layer widens after incorporation of oxygen, resulting in a larger bandgap discontinuity, especially at the p-a-Si:H / c-Si interface valence band order ΔE V The increase of will affect the collection of hole carriers, such as figure 1 As shown, among them, figure 1 From left to right in the middle: emitter p-a-Si:H103, ordinary passivation layer i-a-Si(O x ): H102, crystalline silicon c-Si101, common passivation layer i-a-Si(O x ): H102 and the back field layer n-a-Si: H104; the energy bands corresponding to each layer below are: conduction band E C , valence band E V , Fermi level E F , and the valence band order ΔE on the p-side of the emitter V

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